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Low Temperature (< 130oC) Formation of Crystalline Ge Film on Insulator by Stress Stimulated GILC

Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI:10.7567/ssdm.2019.f-6-04
T. Nishijima, K. Kusano, K. Kudo, M. Furuta, Y. Kusuda, S. Motoyama, N. Naka, T. Numata, I. Tsunoda
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应力刺激GILC在绝缘子上低温(< 130℃)形成结晶锗膜
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
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