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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials最新文献

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High-efficiency Wireless Power Transfer System 高效无线电力传输系统
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.m-5-01
L. Pamungkas, M. Tampubolon, Hung-Jen Chiu
{"title":"High-efficiency Wireless Power Transfer System","authors":"L. Pamungkas, M. Tampubolon, Hung-Jen Chiu","doi":"10.7567/ssdm.2019.m-5-01","DOIUrl":"https://doi.org/10.7567/ssdm.2019.m-5-01","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121711859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Demonstration of Electromechanical Device Based on 2D Piezoelectric Materials for Nanogenerator Applications 基于二维压电材料的机电器件在纳米发电机中的应用演示
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.d-6-01
N. Higashitarumizu, H. Kawamoto, K. Nagashio
{"title":"Demonstration of Electromechanical Device Based on 2D Piezoelectric Materials for Nanogenerator Applications","authors":"N. Higashitarumizu, H. Kawamoto, K. Nagashio","doi":"10.7567/ssdm.2019.d-6-01","DOIUrl":"https://doi.org/10.7567/ssdm.2019.d-6-01","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122267415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gallium Diffusion and Ammonia Decomposition on Growing GaN Surface: First Principles Molecular Dynamics Simulations 生长GaN表面的镓扩散和氨分解:第一性原理分子动力学模拟
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.f-5-02
K. Bui, M. Boero, K. Shiraishi, A. Oshiyama
{"title":"Gallium Diffusion and Ammonia Decomposition on Growing GaN Surface: First Principles Molecular Dynamics Simulations","authors":"K. Bui, M. Boero, K. Shiraishi, A. Oshiyama","doi":"10.7567/ssdm.2019.f-5-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.f-5-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124996612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Solute PEDOT:PSS as an Excellent Passivation Material of Si Substrate 溶质PEDOT:PSS作为一种优良的硅衬底钝化材料
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.c-6-03
V. Nguyen, S. Kato, K. Gotoh, Y. Kurokawa, N. Usami
{"title":"Solute PEDOT:PSS as an Excellent Passivation Material of Si Substrate","authors":"V. Nguyen, S. Kato, K. Gotoh, Y. Kurokawa, N. Usami","doi":"10.7567/ssdm.2019.c-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.c-6-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127418305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
5291-ppi OLED Display using CAAC-IGZO FET with Channel Length of 60 nm 采用CAAC-IGZO FET的5291 ppi OLED显示器，通道长度为60nm
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.g-5-04
H. Kobayashi, S. Katsui, T. Nakagawa, Y. Tamatsukuri, H. Shishido, S. Uesaka, R. Yamaoka, T. Nagata, T. Aoyama, Y. Okazaki, T. Ikeda, S. Yamazaki
{"title":"5291-ppi OLED Display using CAAC-IGZO FET with Channel Length of 60 nm","authors":"H. Kobayashi, S. Katsui, T. Nakagawa, Y. Tamatsukuri, H. Shishido, S. Uesaka, R. Yamaoka, T. Nagata, T. Aoyama, Y. Okazaki, T. Ikeda, S. Yamazaki","doi":"10.7567/ssdm.2019.g-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.g-5-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132568460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasmonic modulator driven by phase-transition of GST superlattice GST超晶格相变驱动的等离子调制器
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.b-6-05
T. Sugiyama, A. Kubo, T. Nakano
{"title":"Plasmonic modulator driven by phase-transition of GST superlattice","authors":"T. Sugiyama, A. Kubo, T. Nakano","doi":"10.7567/ssdm.2019.b-6-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.b-6-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128169600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental study of bias stress degradation of organic thin film transistors 有机薄膜晶体管偏置应力退化的实验研究
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.a-6-04
K. Oshima, M. Saito, M. Shintani, K. Kuribara, Y. Ogasahara, T. Sato
{"title":"Experimental study of bias stress degradation of organic thin film transistors","authors":"K. Oshima, M. Saito, M. Shintani, K. Kuribara, Y. Ogasahara, T. Sato","doi":"10.7567/ssdm.2019.a-6-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.a-6-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124003610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Quick measurement method of carbon-related defect concentration in n-type GaN by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy 双色亚带隙光激发等温电容瞬态光谱快速测量n型GaN中碳相关缺陷浓度方法
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.k-7-04
K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda
{"title":"Quick measurement method of carbon-related defect concentration in n-type GaN by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy","authors":"K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda","doi":"10.7567/ssdm.2019.k-7-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-7-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115131673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Size Modulated Nitrogen-Doped Graphene Oxide Quantum Dots for Diffusive Memristor based Synaptic Device Applications 尺寸调制氮掺杂氧化石墨烯量子点用于扩散忆阻器的突触器件应用
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.h-7-04
A. Sokolov, Yu‐Rim Jeon, H. Han, B. Ku, G. Hassan, H. Abbas, C. Choi
{"title":"Size Modulated Nitrogen-Doped Graphene Oxide Quantum Dots for Diffusive Memristor based Synaptic Device Applications","authors":"A. Sokolov, Yu‐Rim Jeon, H. Han, B. Ku, G. Hassan, H. Abbas, C. Choi","doi":"10.7567/ssdm.2019.h-7-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.h-7-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115241347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Disentanglement of Spin Orbit Torques Originated from Spin Hall Effect and Rashba-Edelstein Effect Using Harmonic Hall Measurements 基于谐波霍尔测量的自旋霍尔效应和Rashba-Edelstein效应的自旋轨道力矩解纠缠
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.e-6-04
Y. Du, H. Gamou, Shin-ichiro Takahashi, S. Karube, M. Kohda, J. Nitta
{"title":"Disentanglement of Spin Orbit Torques Originated from Spin Hall Effect and Rashba-Edelstein Effect Using Harmonic Hall Measurements","authors":"Y. Du, H. Gamou, Shin-ichiro Takahashi, S. Karube, M. Kohda, J. Nitta","doi":"10.7567/ssdm.2019.e-6-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.e-6-04","url":null,"abstract":"We report on the quantitative separation of the spin orbit torques (SOTs) originated from the spin Hall effect (SHE) and the Rashba-Edelstein effect (REE), by performing the Harmonic Hall measurements for epitaxial platinum/cobalt (Pt/Co) bilayers. The damping-like (DL-) and field-like (FL-)SOT efficiencies (ξDL and ξFL ) are quantified respectively by fitting the SOT data with corresponding spin-diffusion equation. As a result, the ξDL originated from the Pt bulk region (ξDL0) decreases significantly with decreasing temperature, while the ξFL from the substrate (sub.)/Pt (ξFL1) and Pt/Co (ξFL2) interface barely change, suggesting that the origin of FL-SOT is the REE instead of the SHE; the sign of ξFL1 is opposite to ξFL2, which is consistent with the REE where the direction of the spin accumulation depends on the interfacial electric field induced by broken inversion symmetry. Moreover, the ξDL induced by sub./Pt (ξDL1) and Pt/Co (ξDL2) interfaces are found to be about 1 order of magnitude smaller than maximum ξDL0 , while their sign are consistent with respective ξFL (ξFL1 and ξFL2 ). Our work presents a thorough disentanglement of the SOTs in heavy metal/ferromagnet bilayers in which both SHE and REE are present, and provides deterministic answers to the fundamental question on their physical origin.","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122859814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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