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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials最新文献

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Strain Relaxation Enhancement of Ge1−x−ySixSny Epitaxial Layer on Ge Substrate Using Ion-Implantation Method 离子注入法增强Ge衬底上Ge1−x−ySixSny外延层的应变松弛
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.f-6-05
H. Sofue, M. Fukuda, S. Shibayama, S. Zaima, O. Nakatsuka
{"title":"Strain Relaxation Enhancement of Ge1−x−ySixSny Epitaxial Layer on Ge Substrate Using Ion-Implantation Method","authors":"H. Sofue, M. Fukuda, S. Shibayama, S. Zaima, O. Nakatsuka","doi":"10.7567/ssdm.2019.f-6-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.f-6-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123411658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact BJT based On-Die CMOS Temperature Sensor for thermal management of SOC on 14 nm Process 基于紧凑BJT的片上CMOS温度传感器，用于14nm制程SOC的热管理
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.m-6-04
T. Oshita
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引用次数: 0
Characterization of Crystalline Oxide Semiconductor FET/Si-FET Hybrid Structured Analog Multiplier for Artificial Neural Network 用于人工神经网络的晶体氧化半导体FET/Si-FET混合结构模拟乘法器的表征
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.h-6-04
Y. Kurokawa, T. Aoki, M. Kozuma, H. Kimura, S. Yamazaki
{"title":"Characterization of Crystalline Oxide Semiconductor FET/Si-FET Hybrid Structured Analog Multiplier for Artificial Neural Network","authors":"Y. Kurokawa, T. Aoki, M. Kozuma, H. Kimura, S. Yamazaki","doi":"10.7567/ssdm.2019.h-6-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.h-6-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129840620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Crystalline Oxide Semiconductor FET/Si-FET Hybrid Structure-based In-Memory Computing Circuit for Artificial Neural Network Applications 基于晶体氧化半导体FET/Si-FET混合结构的内存计算电路用于人工神经网络
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.h-5-02
T. Aoki, M. Kozuma, Y. Kurokawa, H. Kimura, S. Yamazaki
{"title":"Crystalline Oxide Semiconductor FET/Si-FET Hybrid Structure-based In-Memory Computing Circuit for Artificial Neural Network Applications","authors":"T. Aoki, M. Kozuma, Y. Kurokawa, H. Kimura, S. Yamazaki","doi":"10.7567/ssdm.2019.h-5-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.h-5-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122770105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Impact of Stress and Parasitic RC in Sub-40nm MF and MR nMOSFETs for RF and mm-wave CMOS Applications 应力和寄生RC对亚40nm MF和MR nmosfet射频和毫米波CMOS应用的影响
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.n-6-02
J. Guo, Z. Li, J. Lin
{"title":"The Impact of Stress and Parasitic RC in Sub-40nm MF and MR nMOSFETs for RF and mm-wave CMOS Applications","authors":"J. Guo, Z. Li, J. Lin","doi":"10.7567/ssdm.2019.n-6-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.n-6-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131198131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characteristics Variations and Reliability of CAAC-IGZO FETs CAAC-IGZO场效应管的特性变化和可靠性
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.g-5-01
S. Tezuka, T. Takeuchi, H. Sawai, M. Kurata, T. Kakehata, K. Ikeda, R. Motoyoshi, T. Hanada, E. Asano, T. Murakawa, S. Yamazaki
{"title":"Characteristics Variations and Reliability of CAAC-IGZO FETs","authors":"S. Tezuka, T. Takeuchi, H. Sawai, M. Kurata, T. Kakehata, K. Ikeda, R. Motoyoshi, T. Hanada, E. Asano, T. Murakawa, S. Yamazaki","doi":"10.7567/ssdm.2019.g-5-01","DOIUrl":"https://doi.org/10.7567/ssdm.2019.g-5-01","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128531475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Roll-to-toll Growth of Ga-doped ZnO Transparent Conducting Films by Using Plasma-assisted Molecular Beam Deposition 等离子体辅助分子束沉积制备ga掺杂ZnO透明导电薄膜
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.g-5-05
T. Muranaka, Y. Tsuchiya, T. Aoki, N. Onojima, T. Matsumoto, S. Hiraki, H. Kono, K. Kijima, S. Hagihara
{"title":"Roll-to-toll Growth of Ga-doped ZnO Transparent Conducting Films by Using Plasma-assisted Molecular Beam Deposition","authors":"T. Muranaka, Y. Tsuchiya, T. Aoki, N. Onojima, T. Matsumoto, S. Hiraki, H. Kono, K. Kijima, S. Hagihara","doi":"10.7567/ssdm.2019.g-5-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.g-5-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126897315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Organic Hole Conducting Layer Achieves 80.5% Fill Factor in Conventional Silicon Solar Cells 传统硅太阳能电池中有机空穴导电层填充系数达到80.5%
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.c-6-04
L. Kuo, P. P. Pancham, Y.C. Chang, C. Lin, B. Lin, H. Meng, P. Yu
{"title":"Organic Hole Conducting Layer Achieves 80.5% Fill Factor in Conventional Silicon Solar Cells","authors":"L. Kuo, P. P. Pancham, Y.C. Chang, C. Lin, B. Lin, H. Meng, P. Yu","doi":"10.7567/ssdm.2019.c-6-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.c-6-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126570819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithically Integrated Optical OR Gate Using Light-Emitting Transistors 使用发光晶体管的单片集成光或门
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.b-6-01
Y. Huang, H.H. Chen, C.H. Wu
{"title":"Monolithically Integrated Optical OR Gate Using Light-Emitting Transistors","authors":"Y. Huang, H.H. Chen, C.H. Wu","doi":"10.7567/ssdm.2019.b-6-01","DOIUrl":"https://doi.org/10.7567/ssdm.2019.b-6-01","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117302032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microstructural Analysis of Sintered Ag Interconnections through Different Reduction Methods 不同还原方法烧结银互连件的显微组织分析
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.j-5-03
J.H. Liu, J. Song
{"title":"Microstructural Analysis of Sintered Ag Interconnections through Different Reduction Methods","authors":"J.H. Liu, J. Song","doi":"10.7567/ssdm.2019.j-5-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.j-5-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129940358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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