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Strain Relaxation Enhancement of Ge1−x−ySixSny Epitaxial Layer on Ge Substrate Using Ion-Implantation Method

Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI:10.7567/ssdm.2019.f-6-05
H. Sofue, M. Fukuda, S. Shibayama, S. Zaima, O. Nakatsuka
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离子注入法增强Ge衬底上Ge1−x−ySixSny外延层的应变松弛
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
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