ECS Journal of Solid State Science and Technology最新文献_第5页

Design and Simulation of Bi-Layer Optimized High K- Dielectric Medium for N-Mosfet with Wild Horse Optimization to Improve Electrical Characteristics 采用野马优化技术设计和模拟用于 N-Mosfet 的双层优化高 K 介电介质，以改善电气特性

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-07-11 DOI: 10.1149/2162-8777/ad5588

R. Pavithra Guru

{"title":"Design and Simulation of Bi-Layer Optimized High K- Dielectric Medium for N-Mosfet with Wild Horse Optimization to Improve Electrical Characteristics","authors":"R. Pavithra Guru","doi":"10.1149/2162-8777/ad5588","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5588","url":null,"abstract":"Electronic devices for advanced modern semiconductor based technology, mainly focus on the design regarding lighter, faster and more affordable solutions to meet the specifications of modern digital electronics. Some of the drawbacks for minimizing device size in MOSFET include gate insulator scaling, Short-Channel Effects (SCEs), shallow junction technology and off-state leakage current in MOSFET devices. In addition, the traditional SiO2 as a dielectric material contains restricted maximum capacitance as well as increased tunnel current leakage due to the thickness. Hence, a High-k dielectric is required to replace SiO2 to overcome the mentioned issues. In this model, the N-type MOSFET is designed based on the bi-layer high K-dielectric medium with optimized thickness according to the maximum capacitance and minimum threshold voltage, which are implemented on VLSI based applications such as 6 T SRAM for evaluating the performance. The drain current of HfO2, Al2O3 and HfO2+Si3N4 for 2.5 v drain voltage are 1.87 mA, 1.51 mA and 3.54 mA. Then, the read and write delay of the single and bi-layer MOSFET are 70.84 ps, 82.64 ps, 95.21 ps and 10.24 ps, 15.47 ps, 21.74 ps. Thus, the designed and simulated bi-layer optimized high k- dielectric medium for N-MOSFET with wild horse optimization performs better electrical characteristics than the single layer dielectric medium MOSFET.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"77 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141613608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Co3+ Doped CdFe2O4 Nanoparticles: Structural, Optical, Magnetic, and Electrical Properties 掺杂 Co3+ 的 CdFe2O4 纳米粒子：结构、光学、磁学和电学特性

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-07-09 DOI: 10.1149/2162-8777/ad5dfb

G. Satayanarayana Goud, Nakiraboina Venkatesh, D. Ravi Kumar, Syed Ismail Ahmad and P. Veerasomaiah

{"title":"Co3+ Doped CdFe2O4 Nanoparticles: Structural, Optical, Magnetic, and Electrical Properties","authors":"G. Satayanarayana Goud, Nakiraboina Venkatesh, D. Ravi Kumar, Syed Ismail Ahmad and P. Veerasomaiah","doi":"10.1149/2162-8777/ad5dfb","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5dfb","url":null,"abstract":"Through the citrate-gel auto-combustion technique, we synthesized Co-doped cadmium nano ferrites (NFs) with the formula CoxCd1−xFe2O4 (where 0 ≤ x ≤ 1.0 with increments of 0.2). The synthesized materials underwent comprehensive analysis utilizing X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy. Magnetic and electrical properties were evaluated using a vibrating sample magnetometer and LCR meter, respectively. XRD analysis confirmed the spinel phase structure and FD3M space group. SEM analysis revealed agglomerations of nanoparticles and grain boundaries. Elemental analysis of the synthesized nanomaterials was provided by energy dispersive spectroscopy. FTIR spectroscopy identified two main broad bands corresponding to the tetrahedral (A) and octahedral (B) sites, confirming the spinel structure. Magnetic properties such as magnetic saturation, coercivity, and remanent magnetization were characterized using VSM. Additionally, the LCR meter assessed frequency and temperature-dependent dielectric parameters, including AC conductivity (σAC), dielectric permittivity, dielectric loss (tan δ), and impedance spectra. An increase in AC conductivity (σAC) was observed with increasing temperature and frequency.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"37 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimizing Device Dimensions for Dual Material Junctionless Tree-FET: A Path to Improved Analog/RF Performance 优化双材料无结树 FET 的器件尺寸：提高模拟/射频性能的途径

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-07-09 DOI: 10.1149/2162-8777/ad5c9e

Divya Beebireddy, Kaleem Fatima, Nirmala Devi L.

{"title":"Optimizing Device Dimensions for Dual Material Junctionless Tree-FET: A Path to Improved Analog/RF Performance","authors":"Divya Beebireddy, Kaleem Fatima, Nirmala Devi L.","doi":"10.1149/2162-8777/ad5c9e","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5c9e","url":null,"abstract":"This comprehensive study delves into the intricate analysis of the electrical and analog/RF performance of the Dual Material (DM) junctionless (JL) Tree-FET. During the optimization process, various DC and analog/RF metrics were taken into account. It is observed that, as the gate length decreases (12 nm to 8 nm), there is an increment in drain induced barrier lowering (DIBL), switching ratio (Ion/Ioff), and subthreshold swing (SS). Conversely, reducing the size of TNS (and WNS) from 10 nm to 5 nm (and 20 nm to 10 nm, respectively) lead to notable improvements, with a 34.4% (21.01%) decrease in SS, 93.19% (58.86%) decrease in DIBL, and 98.6% (41.06%) increase in Ion/Ioff. Furthermore, the analog/RF performance metrics of the device is carefully examined across dimensional variations, revealing significant improvements at the optimal values. Additionally, the study extends to the evaluation of inverter circuit characteristics with DM JL Tree-FET. Remarkably, the static noise margin (SNM) and delay exhibit 337.3 mV and 3.053 ps, respectively, positioning the device as a prime candidate for applications demanding low power consumption and high-frequency operation in future technology nodes.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"17 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of Process Variation in Nanotube Tunnel Field Effect Transistor 纳米管隧道场效应晶体管的工艺变化研究

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-07-09 DOI: 10.1149/2162-8777/ad5c9d

Anju Gedam, Bibhudendra Acharya, Guru Prasad Mishra

引用次数: 0

Nanocomposites of Co-NiS/GO as a Versatile Catalyst: Enabling Platinum-Free DSSC Counter Electrodes and Enhancing Organic Dye Degradation 作为多功能催化剂的 Co-NiS/GO 纳米复合材料：实现无铂 DSSC 对电极并促进有机染料降解

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-07-09 DOI: 10.1149/2162-8777/ad5c00

Priyadharshini G., D. Geetha, P. S. Ramesh

{"title":"Nanocomposites of Co-NiS/GO as a Versatile Catalyst: Enabling Platinum-Free DSSC Counter Electrodes and Enhancing Organic Dye Degradation","authors":"Priyadharshini G., D. Geetha, P. S. Ramesh","doi":"10.1149/2162-8777/ad5c00","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5c00","url":null,"abstract":"This study presents the synthesis of a nanocomposite intended to serve as a counter electrode in dye-sensitized solar cells (DSSCs), replacing platinum electrodes, as well as functioning as a nanocatalyst for organic dye degradation. Graphene oxide was synthesized using a modified Hummers method, and cobalt-doped nickel sulfide on graphene oxide (Co-NiS/GO) was prepared via hydrothermal synthesis. The samples underwent characterization through various testing methods. X-ray diffraction analysis revealed a hexagonal structure with a crystallite size of 30 nm. Field-emission scanning electron microscopy/energy-dispersive X-ray images showed a cornflake-like structure, with elements such as cobalt, nickel, sulfur, carbon, and oxygen present. Chemical valence states were confirmed through X-ray photoelectron specteroscopy analysis. The power conversion efficiency of the Co-NiS/GO counter electrode in DSSCs was investigated, with parameters such as open-circuit voltage, short-circuit current density, fill factor, and power conversion efficiency calculated to be 8.6032 mV, 0.5484 mA cm−2, 61, and 2.83%, respectively, based on I-V studies. Furthermore, the developed Co-NiS/GO nanocomposite was assessed for its photo catalytic dye degradation capabilities using malachite green (MG), achieving a degradation rate of approximately 96% within 180 min.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"1 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancement of Charge-Discharge Properties and Temperature Stability of (Ba0.975Na0.05)Ti0.99Nb0.01O3 Ceramic by Doping High-Entropy Oxide 通过掺杂高熵氧化物增强(Ba0.975Na0.05)Ti0.99Nb0.01O3 陶瓷的充放电特性和温度稳定性

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-07-09 DOI: 10.1149/2162-8777/ad5dfa

Zheng-Xiang Bian, Qing-Qing Liu, Zhi-Wei Li, Zhi-Hui Chen and Yu-Rong Ren

{"title":"Enhancement of Charge-Discharge Properties and Temperature Stability of (Ba0.975Na0.05)Ti0.99Nb0.01O3 Ceramic by Doping High-Entropy Oxide","authors":"Zheng-Xiang Bian, Qing-Qing Liu, Zhi-Wei Li, Zhi-Hui Chen and Yu-Rong Ren","doi":"10.1149/2162-8777/ad5dfa","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5dfa","url":null,"abstract":"A bidirectional optimization strategy was adopted to fabricate (1-x)(Ba0.975Na0.05)Ti0.99Nb0.01O3)-xBi(Zn0.2Mg0.2Al0.2Sn0.2Zr0.2)O3(abbreviated as (1-x)BNNT-xBZMASZ, x = 0.02–0.10) ceramics, aimed to improve the energy storage performance. X-ray diffraction results revealed that Bi2+ cations entered the A site and the multiple cations occupied the B site of BNNT, thereby decreased the remnant polarization intensity and refined the hysteresis loop. Scanning electron microscopy images showed uniform morphologies with clear grain boundaries of the ceramics, and the average size decreased with x increasing. The substitution of multiple cations at the B-site induced the splitting of macroscopic ferroelectric domains into smaller polar nanodomains, leading to the formation of high-dynamic polar nanoregions and accelerating the transition from BNNT to relaxor ferroelectrics, thus improving relaxation properties of the material. The excellent energy storage density (Wrec ∼ 2.80 J cm−3) and efficiency (∼90.0%) can be obtained under 200 kV cm−1. Moreover, the discharge-charge testing revealed excellent current density (∼589.5 A cm−2), high power density (∼20.63 MW cm−2), and extremely short discharge time (t0.9 ∼ 50.4 ns), along with exceptional temperature stability and cycling stability under the equivalent electric field of 120 kV cm−1. The 0.92BNNT-0.08BZMASZ ceramic offers a new approach to the design and an improvement of pulsed dielectric capacitor materials.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"2016 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Influence of CdS on the Structural and Optical Properties of Nano ZnWO4 CdS 对纳米 ZnWO4 结构和光学特性的影响

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-07-09 DOI: 10.1149/2162-8777/ad5dfc

Zein K. Heiba, Noura M. Farag, Asmaa M. Abozied, Ali Badawi and Mohamed Bakr Mohamed

{"title":"The Influence of CdS on the Structural and Optical Properties of Nano ZnWO4","authors":"Zein K. Heiba, Noura M. Farag, Asmaa M. Abozied, Ali Badawi and Mohamed Bakr Mohamed","doi":"10.1149/2162-8777/ad5dfc","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5dfc","url":null,"abstract":"We investigated the influence of CdS on the structural and optical properties of nano ZnWO4 for optical applications. (1−x)ZnWO4/xCdS (x; 0 to 0.25) heterojunctions were formed and the structure and microstructure of the ZnWO4 and CdS phases developed were investigated using Rietveld refinement analysis for synchrotron X-ray diffraction data. Phase analysis revealed the phase percentage of the CdS phase is always less than the nominated value (x), implying merging of some Cd and S into ZnWO4. Raman spectra showed CdS peaks, confirming the existence of CdS. Scanning electron microscopy showed two distinct morphologies: plate-like particles (ZnWO4 phase) and spherical shape (CdS phase). UV–vis diffuse measurements revealed enhancement of absorbance and reduction in reflectance and transmittance, in the range 300–56 nm, as the amount of CdS (x) increased in the (1−x)ZnWO4/xCdS system. Band gap of the ZnWO4 phase reduced from 4.0 eV for x = 0.0 to 3.9, 3.6, and 2.9 eV for x = 0.05, 0.1, and 0.25, respectively. The highest refractive index values were obtained as the amount of CdS reached 0.05. Impact of alloying on linear and nonlinear parameters and emitted photoluminescence spectra was studied. Upon loading ZnWO4 with CdS, the PL intensity is greatly quenched and the whole spectrum is red shifted, from 480 to 540 nm. CIE chromaticity diagrams show that ZnWO4 sample without any doping exhibits a blue color while the doped system reveals green-yellow colors.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"33 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141584706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Review—Structural and Optical Interpretations on Phosphor-Based Optical Thermometry 回顾--基于荧光粉的光学测温的结构和光学解释

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-07-08 DOI: 10.1149/2162-8777/ad5bff

Tejas Chennappa and Sudha D. Kamath

{"title":"Review—Structural and Optical Interpretations on Phosphor-Based Optical Thermometry","authors":"Tejas Chennappa and Sudha D. Kamath","doi":"10.1149/2162-8777/ad5bff","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5bff","url":null,"abstract":"This comprehensive review article discusses the brief history, development, and applications of phosphor-based optical thermometers, which have become increasingly important in various fields due to their ability to measure temperature remotely and with high precision. The article highlights the importance of choosing the suitable phosphor material for a given application, considering factors such as crystal structure and mode of thermometry. It then delves into the structural importance of phosphors, discussing their luminescent properties. The review focuses particularly on fluorescence-based temperature-dependent techniques, including the fluorescence intensity ratio method, which has garnered significant attention due to its straightforward implementation, affordability, and self-referential nature. The article discusses the mathematical formulations underlying this method, including the Boltzmann distribution and the effective lifetime calculation. The review also explores the concept of dual-mode thermometry, which involves the use of multiple luminescent centers to enhance sensitivity and thermal stability. This approach is particularly useful in applications where single-emitter thermometers are vulnerable to variations in excitation intensity or detector stability. The article highlights the advantages, limitations, and future developments of phosphor-based thermometers, including their ability to measure temperature remotely and with high precision. Highlights Suitability of double perovskite phosphors for optical thermometry applications. Double perovskite structure influence on the sensitivities of temperature sensors. Fluorescence intensity ratio method is effective for the interpretation of thermal sensor sensitivities. Phosphors can be used as optical temperature sensors at higher temperatures.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"52 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of Zn Doped Li1.5Al0.5−xZnxGe1.5(PO4)3 (x = 0, 0.1 & 0.2) as a Solid Electrolyte for Li Ion Batteries 掺锌 Li1.5Al0.5-xZnxGe1.5(PO4)3（x = 0、0.1 和 0.2）作为锂离子电池固态电解质的研究

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-07-04 DOI: 10.1149/2162-8777/ad5c01

Sruthy Subash, Abu Faizal, T. D. Mercy and K. Kamala Bharathi

{"title":"Investigation of Zn Doped Li1.5Al0.5−xZnxGe1.5(PO4)3 (x = 0, 0.1 & 0.2) as a Solid Electrolyte for Li Ion Batteries","authors":"Sruthy Subash, Abu Faizal, T. D. Mercy and K. Kamala Bharathi","doi":"10.1149/2162-8777/ad5c01","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5c01","url":null,"abstract":"All solid lithium-ion batteries (ASLB) have gained a lot of attention as it could deliver high energy and power density. In order to completely establish ASLB, proper understanding of solid electrolyte is very vital and the research from diverse point is still undergoing. Among them, NASICON-type phosphate based solid electrolytes are one of the promising materials due to good ionic conductivity and atmospheric stability. Addition of proper dopants into the parent material could cause an increment in their ionic conductivity as well as stability, thus fitting the material apt as solid electrolyte. This study aims in understanding the effect of ionic conductivity and stability of Lithium Aluminium Germanium Phosphate (LAGP) material upon adding Zinc as dopant material. We explored the effect of structural, ionic conductivity, stability against Li and Ac conductivity properties of Li1.5Al0.5−xZnxGe1.5(PO4)3 solid electrolyte with x = 0, 0.1 and 0.2. Our study showed that doping of aluminium with slightly bigger Zn ion could enhance the stability and conductivity of the material without changing the crystal structure. When x = 0.1 the ionic conductivity of the material attained is 1 × 10−5 S cm−1 at RT, which reaches 2.57 × 10−5 S cm−1 at 60 °C. Such a change in conductivity arises due to the expansion of ionic pathways which can be further tuned by exploring the limiting concentration 0 ≤ x < 0.1. Moreover, the sample also showed good stability at 0.03 and 0.05 mA cm−2 current densities against Li metal. Present study shows that Zn doping can improve the ionic conductivity of LAGP moderately and it can be used as a solid electrolyte for fabricating all-solid-state batteries.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141548243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Power and High-Efficiency 221 nm AlGaN Far Ultraviolet Laser Diodes 高功率、高效 221 nm AlGaN 远紫外激光二极管

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-07-02 DOI: 10.1149/2162-8777/ad5a3b

Syeda Wageeha Shakir, Muhammad Usman, Usman Habib, Shazma Ali and Laraib Mustafa

引用次数: 0