纳米管隧道场效应晶体管的工艺变化研究

IF 1.8 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

ECS Journal of Solid State Science and Technology Pub Date : 2024-07-09 DOI:10.1149/2162-8777/ad5c9d

Anju Gedam, Bibhudendra Acharya, Guru Prasad Mishra

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引用次数: 0

摘要

在纳米尺度上，工艺参数和器件尺寸的变化会广泛影响器件的电气性能。因此，对器件的整体行为进行全面的预测研究是非常必要的。本文分析了无结纳米管 TFET 在制造过程中由随机掺杂波动 (RDF)、氧化物厚度变化和工作函数引起的工艺变化。该研究定量评估了工艺变化对纳米管 TFET 结构的能带图、电场、载流子浓度和漏极电流等各种电气参数的影响。器件仿真是通过三维 SILVACO ATLAS 仿真器进行的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study of Process Variation in Nanotube Tunnel Field Effect Transistor

In the nanoscale, the process parameters and device dimension variation extensively affect the electrical performance of the device. Therefore, an inclusive study for the prediction of the overall device behavior is extremely necessary. In this manuscript, process variations caused by random dopant fluctuation (RDFs), variation of oxide thickness, and workfunction during fabrication are analyzed in junctionless nanotube TFET. The work quantitatively evaluates the impact of process variability on the various electrical parameters like energy band diagram, electric field, carrier concentration, and drain current of the nanotube TFET structure. The device simulation has been carried out with a 3-D SILVACO ATLAS simulator.

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来源期刊

ECS Journal of Solid State Science and Technology MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

4.50

自引率

13.60%

发文量

455

期刊介绍： The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices. JSS has five topical interest areas: carbon nanostructures and devices dielectric science and materials electronic materials and processing electronic and photonic devices and systems luminescence and display materials, devices and processing.