High-Power and High-Efficiency 221 nm AlGaN Far Ultraviolet Laser Diodes

IF 1.8 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

ECS Journal of Solid State Science and Technology Pub Date : 2024-07-02 DOI:10.1149/2162-8777/ad5a3b

Syeda Wageeha Shakir, Muhammad Usman, Usman Habib, Shazma Ali and Laraib Mustafa

引用次数: 0

Abstract

The optical features of far ultraviolet laser diodes (UV LDs) with peak wavelength emission of 221 nm have been numerically analyzed. Global research teams are developing aluminum gallium nitride (AlGaN)-based farUV LDs on Sapphire and AlN substrates as an alternative to Mercury lamps for air-water purification, polymer curing, and bio-medical devices. In this study, the light output power, internal quantum efficiency, stimulated recombination rate curve, and optical gain curve of the compositionally graded p-cladding layer (p-CL) were studied and show significant improvements. Therefore, the optimized structure can reduce the overflow of electrons and increase the injection of holes. This approach proves to be an efficient method for enhancing farUV LDs’ overall performance when compared to the reference structure.

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高功率、高效 221 nm AlGaN 远紫外激光二极管

对峰值发射波长为 221 nm 的远紫外激光二极管（UV LD）的光学特性进行了数值分析。全球研究团队正在蓝宝石和氮化铝基板上开发基于氮化铝镓（AlGaN）的远紫外激光二极管，以替代汞灯，用于空气-水净化、聚合物固化和生物医疗设备。本研究对成分分级 p-包层（p-CL）的光输出功率、内部量子效率、受激重组率曲线和光增益曲线进行了研究，结果表明其性能有了显著提高。因此，优化后的结构可以减少电子溢出，增加空穴注入。与参考结构相比，这种方法被证明是提高远紫外 LD 整体性能的有效方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

ECS Journal of Solid State Science and Technology MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

4.50

自引率

13.60%

发文量

455

期刊介绍： The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices. JSS has five topical interest areas: carbon nanostructures and devices dielectric science and materials electronic materials and processing electronic and photonic devices and systems luminescence and display materials, devices and processing.