L. Avotina, Lada Bumbure, Annija Elizabete Goldmane, E. Vanags, M. Romanova, Hermanis Sorokins, Aleksandrs Zaslavskis, G. Kizane, Y. Dekhtyar
{"title":"Thermal behaviour of magnetron sputtered tungsten and tungsten-boride thin films","authors":"L. Avotina, Lada Bumbure, Annija Elizabete Goldmane, E. Vanags, M. Romanova, Hermanis Sorokins, Aleksandrs Zaslavskis, G. Kizane, Y. Dekhtyar","doi":"10.1109/AE54730.2022.9920033","DOIUrl":"https://doi.org/10.1109/AE54730.2022.9920033","url":null,"abstract":"Magnetron sputtered tungsten and tungsten diboride nanofilms are proposed to be used in microelectronic devices. Methods of deposition for nanofilms on oxidized silicon followed by etching is among the techniques to be applied for production. However, physical-chemical interactions between various films need to be taken into account. Therefore, a complete surface and in-depth characterization of synthesized films is necessary. Tungsten and tungsten diboride nanofilms are deposited by magnetron sputtering technique, followed by plasma chemical and chemical etching. Characterization of the structures is separated in several main steps including surface morphology, analysis of element composition as well as characterization of thermal properties, including estimation of presence of thermally active emission centers and thermally induced chemical conversions.","PeriodicalId":113076,"journal":{"name":"2022 International Conference on Applied Electronics (AE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130296147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ing. Holček Roman, Ing. Franko Marek, Ing. Martin Šuňal
{"title":"Compensation of input impedance by digital control for high voltage convertor","authors":"Ing. Holček Roman, Ing. Franko Marek, Ing. Martin Šuňal","doi":"10.1109/AE54730.2022.9920061","DOIUrl":"https://doi.org/10.1109/AE54730.2022.9920061","url":null,"abstract":"In this paper, there is presented the digital control of input impedance for high voltage converter. Paper include measurement and evaluation of input impedance performed on auxiliary converter to UIC code 550-2 OR 1st edition and UIC550-3 O, 1st edition standards. The proposed control scheme is created for maximization input impedance for every frequency of injected input voltage.","PeriodicalId":113076,"journal":{"name":"2022 International Conference on Applied Electronics (AE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122029884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Automated detection of soldering splashes using YOLOv5 algorithm","authors":"P. Klčo, D. Koniar, L. Hargaš, M. Paskala","doi":"10.1109/AE54730.2022.9920084","DOIUrl":"https://doi.org/10.1109/AE54730.2022.9920084","url":null,"abstract":"This paper deals with automated visual inspection of electronic boards in serial manufacturing of power electronics devices. Soldering splashes generated in the relevant phases of manufacturing can decrease the quality, parameters and lifetime of hybrid power semiconductor modules. Soldering splashes can occur in restricted area of electronic board and must be removed. Automated inspection is provided using neural network YOLO trained on image dataset of electronic boards acquired by authors in SEMIKRON Slovakia company. Implemented method will lead to higher reliability of manufacturing process.","PeriodicalId":113076,"journal":{"name":"2022 International Conference on Applied Electronics (AE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126011482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Guillermo Montesdeoca, Víctor Asanza, Kevin Chica, D. H. Peluffo-Ordóñez
{"title":"Analysis of Sorting Algorithms Using a WSN and Environmental Pollution Data based on FPGA","authors":"Guillermo Montesdeoca, Víctor Asanza, Kevin Chica, D. H. Peluffo-Ordóñez","doi":"10.1109/AE54730.2022.9920090","DOIUrl":"https://doi.org/10.1109/AE54730.2022.9920090","url":null,"abstract":"Wireless Snesor Network (WSN) based systems with a focus on Internet of Things (IoT) applications generate a large amount of data. Many applications that need to process data in real time make use of microcontroller-based architectures with sequential programming. Systems based on sequential programming can emulate parallelism up to a certain number of instructions, which is not the case with Field Programmable Gate Array (FPGA). The main objective of this work is to monitor a network of 40 CO2 sensors and to perform real-time sorting of all data. In addition, the run time analysis of two sorting algorithms is performed: bubble sort and insertion sort. For this purpose, an FPGA-based architecture is implemented, controlled by a finite state machine(FSM), which executes each of the sorting algorithms. The results show that the insertion sort algorithm is faster than the burbble sort, but consumes more hardware resources in the FPGA.","PeriodicalId":113076,"journal":{"name":"2022 International Conference on Applied Electronics (AE)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126021102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Evaluation of thermal performance of automotive inverter with laminar busbars","authors":"M. Frivaldský","doi":"10.1109/AE54730.2022.9920055","DOIUrl":"https://doi.org/10.1109/AE54730.2022.9920055","url":null,"abstract":"The paper deals with traction inverters used in the field of electromobility, while the focus of the study is, investigation of the thermal performance, when laminar busbars are used. Initially the specifications on the circuit configuration are being discussed. It is then followed by the component selection, while considering main circuit components, the DC link capacitor and power transistor modules represent essential parts for inverter design. Investigation of thermal performance is realized for semiconductor module, and busbars. For this purpose, the simulation model was developed, which contains all required definitions for investigation. With the use of simulation model, it is possible to study the influence of various circuit components, busbar geometry and the ways how they influence the thermal performance of the converter because of electric current flow.","PeriodicalId":113076,"journal":{"name":"2022 International Conference on Applied Electronics (AE)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127480218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Barri, P. Vacula, V. Kote, M. Vacula, J. Jakovenko, J. Voves
{"title":"Precise Model of the Effective Threshold Voltage Changes in the DLS MOSFETs for Different Gate Angles Compared with Measured Data","authors":"D. Barri, P. Vacula, V. Kote, M. Vacula, J. Jakovenko, J. Voves","doi":"10.1109/AE54730.2022.9920095","DOIUrl":"https://doi.org/10.1109/AE54730.2022.9920095","url":null,"abstract":"This paper presents an interesting phenomenon related to the effective threshold voltage changes (δVth,eff) in the diamond layout shape MOS transistors (DLS MOSFETs). Besides it, its analytical expression is presented here for the first time. The analytical approximative expression has been defined based on the results of the 3-D TCAD simulations for the different effective aspect ratio (W/L)eff and different angle α of DLS MOSFET. The effective aspect ratio has been set to 2.0, 1.5, 1.0, 0.5 with the angle α varied from 180° to 80° with the step 20°. Furthermore, for purpose to verify the 3-D TCAD simulation results and measurement results, 1 124 samples were fabricated, which were proportionally divided into rectangle layout shape (RLS) MOSFETs and DLS MOSFETs with the angles α equal to 120°, 100°, and 80°. All the samples have been fabricated in the 160 nm BCD technology process. The mentioned phenomenon described by the proposed expression fits the measured data with a very high level of accuracy equal to 99.995 %. Thus, the presented analytical expression proves its quality. Thanks to the high level of the expression quality, the given expression is recommended to use for the analog designs with high-level precision requests and DLS MOSFET components.","PeriodicalId":113076,"journal":{"name":"2022 International Conference on Applied Electronics (AE)","volume":"324 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132528875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Regulated Cascode Current Mirror with Improved Voltage Swing","authors":"V. Michal","doi":"10.1109/AE54730.2022.9920096","DOIUrl":"https://doi.org/10.1109/AE54730.2022.9920096","url":null,"abstract":"This paper presents a simple and easy-to-use method allowing to improve output swing of regulated cascode CMOS current mirror with short channel devices. It is based on matched offset voltage generators, implemented simultaneously at the input and output of the current mirror. These voltage generators translate the drain voltages of the reference and source transistors to the saturation voltage VDSAT, i.e. to minimal level, ensuring high output resistance of the cascode. The design aims to provide a nanosecond current generator for optical laser source, with fast short channel devices facilitating the integration. This paper presents a concept of circuit implementation, a mathematical description of the optimal value of voltage offset, and simulation results in 40nm process.","PeriodicalId":113076,"journal":{"name":"2022 International Conference on Applied Electronics (AE)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132958090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IO-Link Master Bridge","authors":"D. Matousek, O. Černý","doi":"10.1109/AE54730.2022.9920068","DOIUrl":"https://doi.org/10.1109/AE54730.2022.9920068","url":null,"abstract":"This article describes the practical implementation of the IO-Link master bridge, which ensure an interface between IO-Link devices and a main controlling computer. The main effect of this implementation is a simple data acquisition system based on a microcontroller that enables an easy expansion of many connected IO-Link devices. Concerning universal usage, the communication between the IO-Link master bridge and the computer works on standard UART units. Main computer and IO-Link master bridges interconnection ensure optocouplers. Thus, this method guarantees galvanic isolation firstly and easy expansion by the open collector technique secondly.","PeriodicalId":113076,"journal":{"name":"2022 International Conference on Applied Electronics (AE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116497691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Collaborative Network of Ground Stations with a Virtual Platform to Perform Diversity Combining","authors":"Haidar N. Al-Anbagi, I. Veřtát","doi":"10.1109/AE54730.2022.9920037","DOIUrl":"https://doi.org/10.1109/AE54730.2022.9920037","url":null,"abstract":"A conventional ground station can establish a single downlink with only one satellite at a time through steerable high-gain antenna. In addition to the lack of tracking more than one satellite at once, such single radio communication is highly vulnerable to outages when experiencing severe degrading circumstances or even with steering engine failures. Accordingly, such problematic single radio link would leave the operator with no alternative options to overcome the consequences. This work exhibits a solution to the ground station through networking. Multiple ground stations, with omnidirectional antennas instead of the steerable directive ones, can be engaged in a collaborative network to receive multiple versions of the same transmitted data for processing and combining. The suggested receive diversity combining is performed at a virtual ground station which utilizes a combining algorithm to help detect the original data from the received versions with less errors and hence reflecting more efficient and reliable services. To exploit this aimed diversity gain, a simple combining algorithm is also developed in this article. The simulation results from the proposed scheme have indicated significant performance enhancement over the single site ground station. This cooperative scheme will not only improve the system performance but also offer to track more than one satellite at a time.","PeriodicalId":113076,"journal":{"name":"2022 International Conference on Applied Electronics (AE)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121046667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Understanding ionizing energy losses after charged particle and neutron impact in semiconductors with hybrid pixel detectors","authors":"B. Bergmann","doi":"10.1109/AE54730.2022.9920076","DOIUrl":"https://doi.org/10.1109/AE54730.2022.9920076","url":null,"abstract":"Hybrid pixel detectors of Timepix3 technology allow noiseless single particle detection and identification. We exploit this capability for a comprehensive study of ionizing energy losses and their spatial distribution in silicon sensors after exposure to charged particles and neutrons. (Abstract)","PeriodicalId":113076,"journal":{"name":"2022 International Conference on Applied Electronics (AE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130880379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}