Thermal behaviour of magnetron sputtered tungsten and tungsten-boride thin films

L. Avotina, Lada Bumbure, Annija Elizabete Goldmane, E. Vanags, M. Romanova, Hermanis Sorokins, Aleksandrs Zaslavskis, G. Kizane, Y. Dekhtyar
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引用次数: 1

Abstract

Magnetron sputtered tungsten and tungsten diboride nanofilms are proposed to be used in microelectronic devices. Methods of deposition for nanofilms on oxidized silicon followed by etching is among the techniques to be applied for production. However, physical-chemical interactions between various films need to be taken into account. Therefore, a complete surface and in-depth characterization of synthesized films is necessary. Tungsten and tungsten diboride nanofilms are deposited by magnetron sputtering technique, followed by plasma chemical and chemical etching. Characterization of the structures is separated in several main steps including surface morphology, analysis of element composition as well as characterization of thermal properties, including estimation of presence of thermally active emission centers and thermally induced chemical conversions.
磁控溅射钨和硼化钨薄膜的热行为
提出了磁控溅射钨和二硼化钨纳米膜在微电子器件中的应用。在氧化硅上沉积纳米膜,然后蚀刻是应用于生产的技术之一。然而,需要考虑不同薄膜之间的物理化学相互作用。因此,有必要对合成膜进行完整的表面和深度表征。采用磁控溅射技术制备了钨和二硼化钨纳米膜,然后进行了等离子体化学和化学刻蚀。结构表征分为几个主要步骤,包括表面形貌,元素组成分析以及热性能表征,包括热活性发射中心和热诱导化学转化的存在估计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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