2018 IEEE International Conference on Semiconductor Electronics (ICSE)最新文献

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Nanosystems for Food, Drug and Biomedical Applications 用于食品、药物和生物医学应用的纳米系统
2018 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2018-08-01 DOI: 10.1109/SMELEC.2018.8481318
J. Ying
{"title":"Nanosystems for Food, Drug and Biomedical Applications","authors":"J. Ying","doi":"10.1109/SMELEC.2018.8481318","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481318","url":null,"abstract":"Nanotechnology allows for the unique design and functionalization of materials and devices at the nanometer scale for a variety of applications. Our laboratory has fabricated nanosystems for drug screening, in vitro toxicology, sample preparation, diagnostic, and food pathogen detection. The miniaturized devices allow for the rapid and automated processing of drug candidates, clinical and food samples in tiny volumes, greatly facilitating drug testing, genotyping assays, infectious disease detection, cancer diagnosis, point-of-care monitoring, and food testing.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122273636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Capacitance Effects of Ring Oscillator's Waveform Quality in Designing Physically Unclonable Functions 设计物理不可克隆函数时环形振荡器波形质量的电容效应
2018 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2018-08-01 DOI: 10.1109/SMELEC.2018.8481291
Z. Zulfikar, N. Soin, S. W. Muhamad Hatta
{"title":"Capacitance Effects of Ring Oscillator's Waveform Quality in Designing Physically Unclonable Functions","authors":"Z. Zulfikar, N. Soin, S. W. Muhamad Hatta","doi":"10.1109/SMELEC.2018.8481291","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481291","url":null,"abstract":"The paper discusses the effect of capacitance changes on the ring oscillator to its output wave for a physically unclonable function (PUF) application. The wave quality generated by the ring oscillator (RO) will largely determine the response of PUF. We have analyzed the resulting RO waveforms to determine the capacitor values and the ideal number of RO stages. The peak voltage analysis of the capacitance change has been done with the help of the Mentor Graphics software package. High performance PTM model transistors (16nm, 22nm, 32nm, and 45nm technologies) are selected to form the RO circuit. Based on the results of the study, we recommend that the number of RO stages is at least 5. Then, we also recommend the ideal capacitance value as a compromise between quality and delay. The capacitances should be 0.7fF, 0.8fF, 0.9fF, and 1fF for 16nm, 22nm, 32nm, and 45nm technologies, respectively.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128307551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low Transmittance of Anatase Titanium Dioxide (TiO2) Prepared via Doctor Blade Technique 博士刀法制备锐钛型二氧化钛(TiO2)的低透光率
2018 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2018-08-01 DOI: 10.1109/SMELEC.2018.8481313
M. Sarah, N. Norizan, S. S. Shariffudin, H. Hashim
{"title":"Low Transmittance of Anatase Titanium Dioxide (TiO2) Prepared via Doctor Blade Technique","authors":"M. Sarah, N. Norizan, S. S. Shariffudin, H. Hashim","doi":"10.1109/SMELEC.2018.8481313","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481313","url":null,"abstract":"The effect of deposition layer on the physical, optical and electrical properties of TiO2thin film that were deposited on glass substrates by doctor blade was studied. xray diffraction pattern showed no disruption of crystal and the material is confirmed anatase TiO2. The thicknesses of the thin films increased as the deposition layer increased. FESEM images show crack-free film when the deposition layer was increase. The optical transmittance showed a very high transparency thin films where the readings decreases from 5% to 0% in the visible region. I-V results indicate that the current does not shows any trend of increasing or decreasing from 1 layer to 5 layers' deposition. However, layer 1 exhibited the highest current with 300×10−9 A.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121415875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2018 IEEE International Conference on Semiconductor Electronics (ICSE) Synthesis, Properties and Humidity Detection of Anodized Nb2O5 Films 2018年IEEE半导体电子国际会议(ICSE)阳极氧化Nb2O5薄膜的合成、性能和湿度检测
2018 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2018-08-01 DOI: 10.1109/SMELEC.2018.8481330
R. A. Rani, A. Zoolfakar, Mohamad Fauzee Mohamad Ryeeshyam, N. Azhar, M. H. Mamat, Salman Alrokavan, H. Khan, M. Mahmood
{"title":"2018 IEEE International Conference on Semiconductor Electronics (ICSE) Synthesis, Properties and Humidity Detection of Anodized Nb2O5 Films","authors":"R. A. Rani, A. Zoolfakar, Mohamad Fauzee Mohamad Ryeeshyam, N. Azhar, M. H. Mamat, Salman Alrokavan, H. Khan, M. Mahmood","doi":"10.1109/SMELEC.2018.8481330","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481330","url":null,"abstract":"Synthesis of nanoporous network Nb2O5has been conducted via anodization technique in the flouride-organic based solution. The structure morphology and the properties of the nanoporous films were characterized using field emission scanning electron microscopy (FESEM). In this research, a humidity sensor based on 1.5 micrometer thick nanoporous Nb2O5was developed and their performance was evaluated under 40% to 90% relative humidity at room temperature and different bias voltages of 2, 5 and 8 V. The highest relative sensitivity achieved was 156.2 for humidity sensor operated at bias voltage of 5 V.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114629227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CMOS pixel-aperture and offset pixel-aperture techniques for 3-dimensional imaging 用于三维成像的CMOS像素孔径和偏移像素孔径技术
2018 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2018-08-01 DOI: 10.1109/SMELEC.2018.8481208
Jang-Kyoo Shin
{"title":"CMOS pixel-aperture and offset pixel-aperture techniques for 3-dimensional imaging","authors":"Jang-Kyoo Shin","doi":"10.1109/SMELEC.2018.8481208","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481208","url":null,"abstract":"Pixel-aperture and offset pixel-aperture techniques for 3-dimensional complementary metal oxide semiconductor (CMOS) image sensors are presented in this talk. In conventional camera systems, the aperture is located between the object and the CMOS image sensor (CIS). This type of image sensor consists of a pixel array with red, green, and blue (RGB) Bayer pattern color filters. Our proposed image sensor uses red, green, blue, and white (RGBW) filters, and the aperture is located on the W pixel which is without any color filter. A sharp image can be obtained from the W pixels, and the RGB pixels produce a defocused image with blurring. The sharp image can be compared with the defocused image to obtain depth information for 3D imaging. A metal layer, such as aluminum in the conventional CIS process, is used for the aperture on the white pixel. Offset pixel-aperture structures for disparity information are also considered. We designed and simulated pixel models for the pixel-aperture and offset pixel-aperture structures using a 0.11 µm CIS process and evaluated the performance of the proposed structures using finite-difference time-domain (FDTD) analysis. The proposed structures have been fabricated and some experimental results will also be presented.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131281582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of Permittivity and Conductivity for ESKAPE Pathogens Detection ESKAPE病原菌检测中的介电常数和电导率表征
2018 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2018-08-01 DOI: 10.1109/SMELEC.2018.8481278
Muhammad Khairulanwar Abdul Rahim, M. R. Buyong, Nur Mas Ayu Jamaludin, A. A. Hamzah, K. Siow, B. Majlis
{"title":"Characterization of Permittivity and Conductivity for ESKAPE Pathogens Detection","authors":"Muhammad Khairulanwar Abdul Rahim, M. R. Buyong, Nur Mas Ayu Jamaludin, A. A. Hamzah, K. Siow, B. Majlis","doi":"10.1109/SMELEC.2018.8481278","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481278","url":null,"abstract":"This paper is to addresses the important diagnostic / detection technology gap by describing a rapid, portable, low-cost, and easy-to-use microfluidic, Dielectrophoresis Lab: On-A-Chip based system for detecting the Enterococcus faecium, Staphylococcusaureus, Klebsiella pneumoniae, Acinetobacter baumannii, Pseudomonas aeruginosa, and Enterobacter (ESKAPE) bacterial pathogens that are most commonly associated with antibiotic resistance. However, in this study was focus used the sizes of ESKAPE pathogens to identified the unique identification by translated it into dielectric properties. The MATLAB software was used to analyze and simulated the dielectric properties of each ESKAPE species based on their sizes. The MATLAB simulation was successfully conducted to identified the permittivity and conductivity crossover frequencies for all of Enterococcus faecium, Staphylococcusaureus, Klebsiella pneumoniae, Acinetobacter baumannii, Pseudomonas aeruginosa, Enterobacter species were 1.07 MHz, 0.91 MHz, 1.17 MHz, 0.62 MHz, 0.69 MHz and 0.76 Mhz with each average radius 0.59 µm, 0.687 µm, 0.545 µm, 0.962 µm, 0.875 µm and 0.81 µm respectively. The smallest size of ESKAPE species Klebsiella pneumonia, r of 0.545 µm have the higher crossover frequency (COF) of 1.17 MHz. In contrast the Acinetobacter baumannii species have the largest size, r of 0.962µm but it has lower COF of 0.62MHz.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123928816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Simulation Analysis on CIGS Solar Cell on Different Absorber Layer Thickness Subject to Temperature Change Using SCAPS 1-D Software 利用SCAPS一维软件对温度变化下不同吸收层厚度的CIGS太阳能电池进行仿真分析
2018 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2018-08-01 DOI: 10.1109/SMELEC.2018.8481333
M. Harif, S. F. Abdullah, A. W. Mahmood Zuhdi, F. Za’abar, M. Bahrudin, Azri H. Hasani
{"title":"Simulation Analysis on CIGS Solar Cell on Different Absorber Layer Thickness Subject to Temperature Change Using SCAPS 1-D Software","authors":"M. Harif, S. F. Abdullah, A. W. Mahmood Zuhdi, F. Za’abar, M. Bahrudin, Azri H. Hasani","doi":"10.1109/SMELEC.2018.8481333","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481333","url":null,"abstract":"The Copper Indium Gallium Selenide (CIGS) solar cell due to temperature change has been studied and the analysis was simulated using SCAPS 1-D software with the operating temperature varied from 25°C to 50°C. There are 3 parameters of thickness of CIGS absorber layer had been taken into account. The output characteristics were analyzed through a graphical method. The results showed a decreasing performance on the temperature change with respect to the efficiency, fill factor (FF) and open circuit voltage (Voc) except for short circuit current density (Jsc). The average degradation of efficieny, fill factor and open circuit voltage with respect to temperature are 7.87%, 1.61 % and 6.81 % respectively while short current density increase 0.50%. It can also be suggested that there are significant direct correlations between band gap energy and temperature change.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128449450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Dielectrophoresis: Characterization of Triple-Negative Breast Cancer using Clausius-Mossotti Factor 双电泳:用克劳修斯-莫索蒂因子表征三阴性乳腺癌
2018 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2018-08-01 DOI: 10.1109/SMELEC.2018.8481322
Nur Mas Ayu Jamaludin, M. R. Buyong, Muhammad Khairulanwar Abdul Rahim, A. A. Hamzah, Burhanuddin Yeon Mailis, B. Bais
{"title":"Dielectrophoresis: Characterization of Triple-Negative Breast Cancer using Clausius-Mossotti Factor","authors":"Nur Mas Ayu Jamaludin, M. R. Buyong, Muhammad Khairulanwar Abdul Rahim, A. A. Hamzah, Burhanuddin Yeon Mailis, B. Bais","doi":"10.1109/SMELEC.2018.8481322","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481322","url":null,"abstract":"This paper describes a new possible application of dielectrophoresis (DEP) in breast cancer detection. Breast cancer is one of the most common cancer diseases in Malaysia which makes 17.7% of all cases reported between 2007 and 2011. This research aims to determine the dielectric properties of biophysical and biochemical of triple-negative breast cancer (TNBC). The manipulation of TNBC will be on the detection and enumeration based on polarization factor between permittivity and conductivity of TNBC and suspended medium. The results of analytical modelling prove that there are dynamic changes in the dielectric values, which are the permittivity and conductivity values between TNBC cell and medium when the frequency input value is changed. The findings offer a framework for anticipating TNBC dielectric detection response on the basis of structure-function relationship and suggest that dielectrophoresis lab-on-chip (DLOC) application for TNBC detection and enumeration should be widely used as a surface marker-independent method and provide high precision analysis in cancer progression and treatment effectiveness.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"40 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126175689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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