R. A. Rani, A. Zoolfakar, Mohamad Fauzee Mohamad Ryeeshyam, N. Azhar, M. H. Mamat, Salman Alrokavan, H. Khan, M. Mahmood
{"title":"2018年IEEE半导体电子国际会议(ICSE)阳极氧化Nb2O5薄膜的合成、性能和湿度检测","authors":"R. A. Rani, A. Zoolfakar, Mohamad Fauzee Mohamad Ryeeshyam, N. Azhar, M. H. Mamat, Salman Alrokavan, H. Khan, M. Mahmood","doi":"10.1109/SMELEC.2018.8481330","DOIUrl":null,"url":null,"abstract":"Synthesis of nanoporous network Nb2O5has been conducted via anodization technique in the flouride-organic based solution. The structure morphology and the properties of the nanoporous films were characterized using field emission scanning electron microscopy (FESEM). In this research, a humidity sensor based on 1.5 micrometer thick nanoporous Nb2O5was developed and their performance was evaluated under 40% to 90% relative humidity at room temperature and different bias voltages of 2, 5 and 8 V. The highest relative sensitivity achieved was 156.2 for humidity sensor operated at bias voltage of 5 V.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"157 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"2018 IEEE International Conference on Semiconductor Electronics (ICSE) Synthesis, Properties and Humidity Detection of Anodized Nb2O5 Films\",\"authors\":\"R. A. Rani, A. Zoolfakar, Mohamad Fauzee Mohamad Ryeeshyam, N. Azhar, M. H. Mamat, Salman Alrokavan, H. Khan, M. Mahmood\",\"doi\":\"10.1109/SMELEC.2018.8481330\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Synthesis of nanoporous network Nb2O5has been conducted via anodization technique in the flouride-organic based solution. The structure morphology and the properties of the nanoporous films were characterized using field emission scanning electron microscopy (FESEM). In this research, a humidity sensor based on 1.5 micrometer thick nanoporous Nb2O5was developed and their performance was evaluated under 40% to 90% relative humidity at room temperature and different bias voltages of 2, 5 and 8 V. The highest relative sensitivity achieved was 156.2 for humidity sensor operated at bias voltage of 5 V.\",\"PeriodicalId\":110608,\"journal\":{\"name\":\"2018 IEEE International Conference on Semiconductor Electronics (ICSE)\",\"volume\":\"157 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Semiconductor Electronics (ICSE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2018.8481330\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2018.8481330","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
2018 IEEE International Conference on Semiconductor Electronics (ICSE) Synthesis, Properties and Humidity Detection of Anodized Nb2O5 Films
Synthesis of nanoporous network Nb2O5has been conducted via anodization technique in the flouride-organic based solution. The structure morphology and the properties of the nanoporous films were characterized using field emission scanning electron microscopy (FESEM). In this research, a humidity sensor based on 1.5 micrometer thick nanoporous Nb2O5was developed and their performance was evaluated under 40% to 90% relative humidity at room temperature and different bias voltages of 2, 5 and 8 V. The highest relative sensitivity achieved was 156.2 for humidity sensor operated at bias voltage of 5 V.