2018 IEEE International Conference on Semiconductor Electronics (ICSE)最新文献

{"title":"TUTORIAL 01: Advanced Silicon Devices for VLSI Circuits and Systems at Nanometer Nodes","authors":"S. Saha","doi":"10.1109/smelec.2018.8481323","DOIUrl":"https://doi.org/10.1109/smelec.2018.8481323","url":null,"abstract":"The silicon Integrated circuits (ICs) continues to have an unprecedented impact on improving almost every aspect of modern society including communications, military, security, healthcare, energy saving, industrial automation, transport, and entertainment. Over the last four decades, the relentless pursuit of IC device miniaturization for manufacturing high-performance and high-density IC-chips and system-on-a-chip (SoC) led to the creation of Internet and social media. The semiconductor components are used in smart cars, smart homes, smart cities, smart health, smart energy, smart security, smart appliances, and so on. The Internet enables connecting any and every smart devices or “things” creating “Internet of Things” (IoT) or Internet of everything (IoE). And, the IoT-connected smart devices constitute a smart environment and integrated ecosystem that can be accessed via personal computers, tablets, and smartphones from anywhere without human interaction. However, the performance of nanoscale-MOSFETs in the design and manufacturing of “smart” electronic products necessary to create smart networks or “smart things” to enable smart environments and integrated ecosystems is inadequate due to the fundamental physical limitations such as short channel effects (SCEs). Shrinking conventional bulk MOSFET device dimensions in the decananometer regime degrades device performance including degradation in the subthreshold swing and decrease in device turn-on voltage. As a result, the scaled MOSFETs cannot be turned off easily by lowering the gate voltage leading to excessive leakage current. Due to SCEs, the device characteristics become increasingly sensitive to process variation that imposes a serious challenge for continued scaling of bulk-MOSFETs for the nanometer technology nodes. In addition, at gate length below 20-nm, the sub-surface leakage paths are weakly controlled by the gate irrespective of gate oxide thickness and their potential barriers can be easily lowered by drain bias through the enhanced electric field coupling to the drain. Thus, to surmount the continuous scaling challenges of conventional bulk MOSFET devices new device technologies such as FinFET has emerged as the real alternative to MOSFETs. This tutorial provides the basic features and operating principles of FinFETs required for the understanding of design and manufacturing of advanced ICs at the nanometer nodes for smart electronic products. In addition, this tutorial also discusses the emerging undoped or lightly-doped channel MOSFETs with performance comparable to FinFETs for design and manufacturing of smart IC products.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122466612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization of p-type Emitter Thickness for GaSb-Based Thermophotovoltaic Cells","authors":"W. E. Rashid, P. Ker, M. Z. Jamaludin, N. A. Rahman, M. A. Khamis","doi":"10.1109/SMELEC.2018.8481305","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481305","url":null,"abstract":"Thermophotovoltaic (TPV) cells that convert thermal heat directly into electricity are attracting attention as they potentially produce high output power densities. Owing to its capability to convert with a Carnot efficiency, an optimization of these cells is essential to further enhance their performance and efficiency. This paper focuses on the optimization of p-type emitter thickness of Gallium Antimonide (GaSb) based TPV cell using Silvaco TCAD simulation software. The simulation works in this paper were validated by having a good agreement with those from the experimental work in terms of the electrical characteristics and efficiency of the GaSb TPV cell. Further simulation was done with different p-type emitter thicknesses ranging from 0.15 µm to 1.20 µm, It was demonstrated that the open circuit voltage (Voc) of the cell increases while the short-circuit current density (Jsc) decreases with increasing p-type emitter thickness. Since the rate of increasing Voc is faster than that of decreasing Jsc, higher maximum power efficiency was obtained at an optimum thickness of 0.85 µm. It was found that, under AM1.5 illumination condition, an increment of power efficiency from 5.91 % to 6.63 % was achieved when increasing p-type emitter thickness from 0.15 µm to 0.85 µm.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121637493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization of wurtzite GaN-based Gunn diode as terahertz source","authors":"Wen Zhao Lee, D. Ong, K. Choo","doi":"10.1109/SMELEC.2018.8481290","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481290","url":null,"abstract":"The performance of GaN-based Gunn diode as a terahertz source has been investigated using Monte Carlo particle simulations. The 4-valley analytical band Monte Carlo model developed in the work for modelling electron transport in GaN consists of various scattering mechanisms including impact ionization. The conventional Gunn diode n+ -n−-n-n+ device structure with a notch is optimized to achieve current oscillation in the THz range by studying the effects of transit region length and bias levels. We found that a Gunn diode with 550 nm transit length is capable to achieve a 500 GHz signal of 2.61 W with 2.27% efficiency under 22 V DC and 5V RF condition.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115145891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative Study of the Temperature Effects on n-type and p-type Silicon Solar Cells by Numerical Simulation","authors":"A. A. Zulkefle, Z. Zakaria, M. Zainon, A.I.A. Rahman, Z. A. Baharudin, M. Hanafiah, M.A. Sepee","doi":"10.1109/SMELEC.2018.8481295","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481295","url":null,"abstract":"In this study, the influence of ambient temperature on the performance of p and n types of silicon solar cells have been investigated. The PC1D modeling software is used to simulate and analyze the photovoltaic properties of both types of silicon solar cells with the total thickness is restricted to $1mu m$ and the ambient temperature is varied from 20 to 50°C. The simulation result exhibits the n type silicon solar cell give a better performance in term of short circuit current density compared to n type silicon solar cell. Apart from that, the conversion efficiency of silicon solar cells decrease linearly to ambient temperature due to higher recombination current. The efficiency of 5.58% is achieved for both types of silicon solar cells with ambient tempearture of 20°C.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115165192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrasonic sensor system with a 94 Mrad total-ionizing-dose tolerance","authors":"Shinya Fujisaki, Minoru Watanabe","doi":"10.1109/SMELEC.2018.8481328","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481328","url":null,"abstract":"The Fukushima Daiichi nuclear power plant experienced multiple meltdown events after losing all power after an earthquake and its related tsunami disaster in 2011. Since the Fukushima Daiichi nuclear power plant still has regions of intense radiation, robots with a high radiation tolerance are necessary to complete work in decommissioning the reactors. Such robots frequently require proximity sensors. We have chosen an ultrasound sensor as a radiation-hardened sensor because ultrasound sensors consist of piezoelectric ceramic, which is very robust against radiation. However, although the ultrasound sensor itself is robust against radiation, since a semiconductor receiver circuit must be constructed to amplify the signal received from the ultrasound sensor, we have designed a radiation-hardened receiver circuit and have constructed an ultrasonic sensor system. This paper reports evaluation results demonstrating that the radiation-hardened ultrasonic sensor system has at least a 94 Mrad total-ionizing-dose tolerance.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124541684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Novel Digital Etch Technique for p-GaN Gate HEMT","authors":"Yuan Lin, Yueh-Chin Lin, F. Lumbantoruan, Chang Fu Dec, Burhanuddin Yeop Majilis, E. Chang","doi":"10.1109/SMELEC.2018.8481283","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481283","url":null,"abstract":"We demonstrate the digital etching (DE) process to fabricated E-mode p-GaN/AIGaN/GaN HEMT. DE process comprising low power oxygen (02) plasma oxidizing and low power boron trichloride (BCl<inf>3</inf>) plasma etching to selectively remove p-GaN layer. The atomic layer etching (ALE) has an etching rate of 1.62 nm/cycle to achieved depth of 70nm. The 5-µm source-drain offset length (L<inf>SD</inf>) device with Ni/Au gate metal demonstrated 365 mAlmm drain current density with threshold voltage (V<inf>TH</inf>) of +1.8V, on/off current ratio of 1.6×10⁶, breakdown voltage (BV) of 154V, and static on-resistance (R<inf>ON</inf>) of 8.47 Ω.mm. The 20-µm L<inf>SD</inf> device with Ni/Au gate metal demonstrated 211 mA/mm drain current density with V<inf>TH</inf> of +2V, and on/off current ratio of 1. 2×10⁶, BV of 426V, and static R<inf>ON</inf> of 17.3 Ω.mm.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132554626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Feasability of Zinc Oxide Nanowire as a Temperature Sensor: An Analytical Study","authors":"A. Mohamad, H. Hasim, S. M. Sultan","doi":"10.1109/SMELEC.2018.8481327","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481327","url":null,"abstract":"The feasibility of Zinc Oxide (ZnO) nanowire as a temperature sensor was demonstrated by analytical study. A good quality I(V) model had been fitted with the experimental data on a single ZnO nanowire. It was found that the carrier concentration and mobility measured were 2.95×10¹⁸ cm⁻³ and 1.72 cm² V⁻¹ s⁻¹, respectively. The I(V) model suit with the three-dimensional structure because their de Broglie wavelength smaller than the sample size. The current was observed to increase when the temperature applied increased from 27 °C to 277 °C. It was found that the carrier (electron) play an important part on current change. It was also found that the nanowire structure is more sensitive by a factor of 2 compared to nanowire film although the performances of the nanowire film was enhanced by the piezotronic effect.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132097868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Taguchi optimization of Surface Plasmon Resonance-Kretschmann biosensor using FDTD","authors":"N. A. Jamil, P. Menon, S. Shaari, M. A. Mohamed, Burhanuddin Yeop Majils","doi":"10.1109/SMELEC.2018.8481216","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481216","url":null,"abstract":"This paper reports on the optimization of full-width-at-half-maximum (FWHM) of the surface plasmon resonance (SPR) curve from a graphene-based SPR biosensor. The biosensor was designed in the Kretschmann configuration which is commonly known as the most effective technique for plasmon excitation using Lumerical's finite-difference-time-domain (FDTD) analysis. The performance of the SPR biosensor can be monitored by analysing the FWHM of the SPR curves where a smaller value is desired due to a narrower resonance peak which generally corresponds to a higher transmission power resulting in a more sensitive bio-detection. To optimise the biosensor's FWHM, Taguchi's L9 orthogonal array method was utilized involving four control factors at three level values using the objective function of Smaller-the-Better (STB) signal-to-noise ratio (SNR) characteristic. The results show that the FWHM improved to 1.1261°with best settings of A3B2C3D1. The Taguchi-optimized biosensor achieved 36.98% increase in sensitivity for urea detection.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"187 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123004353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible Photoanode on Titanium Foil for Back-Illuminated Dye Sensitized Solar Cells","authors":"S. Shaban, S. Shafie, Y. Sulaiman, F. Ahmad, M. Q. Lokman, N. F. M. Sharif","doi":"10.1109/SMELEC.2018.8481325","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481325","url":null,"abstract":"This paper reports the fabrication and analysis of flexible photoanode on titanium (Ti) foil for back-illuminated dye sensitized solar cells (DSSCs). Performance comparison with the solid state FTO glass based DSSC using the back-illumination and frond-illuminated techniques were also carried. During the fabrication process, the surface of Ti foil., had been treated with H2O2 and doctor blade method was applied for deposition of the photoanode on substrates. The measurement results show that the fabricated DSSC with flexible photoanode has power conversion efficiency of 1.00% under back illuminated solar radiation of 1.5 A.M while DSSCs with solid state photoanodes have power conversion efficiency of 0.53% (back-illuminated) and 2.22% (front-illuminated)., respectively. The DSSC with flexible photoanode has better power conversion efficiency than the DSSC with solid-state photoanode under back-illumination condition. However., it is comparatively low from front illumination DSSC due to platinized counter electrode partially reflects light., while iodine in the electrolyte absorbs photons affects the performance.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"281 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125864034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design of 2.4 GHz CMOS LC Tank Voltage Controlled Oscillator (VCO) for PLL using 0.18 µm CMOS Technology","authors":"Siti Raudzah Abdul Rahman, S. M. Md Ali, N. Kamal, A. A. Ahmad, M. Othman","doi":"10.1109/SMELEC.2018.8481242","DOIUrl":"https://doi.org/10.1109/SMELEC.2018.8481242","url":null,"abstract":"This paper presents the design of a 2.4 GHz LC Voltage Controlled Oscillator implemented using 0.18 µm CMOS technology. The LC VCO achieves a simulated phase noise of −97.76 dBc/Hz at 1MHz of offset frequency. The output frequency of VCO can be tuned from 2.4 GHz to 2.48 GHz frequency range which correspond to an 80 MHz tuning range Bluetooth device.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122247386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}