{"title":"纤锌矿氮化镓基Gunn二极管太赫兹源的优化","authors":"Wen Zhao Lee, D. Ong, K. Choo","doi":"10.1109/SMELEC.2018.8481290","DOIUrl":null,"url":null,"abstract":"The performance of GaN-based Gunn diode as a terahertz source has been investigated using Monte Carlo particle simulations. The 4-valley analytical band Monte Carlo model developed in the work for modelling electron transport in GaN consists of various scattering mechanisms including impact ionization. The conventional Gunn diode n+ -n−-n-n+ device structure with a notch is optimized to achieve current oscillation in the THz range by studying the effects of transit region length and bias levels. We found that a Gunn diode with 550 nm transit length is capable to achieve a 500 GHz signal of 2.61 W with 2.27% efficiency under 22 V DC and 5V RF condition.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Optimization of wurtzite GaN-based Gunn diode as terahertz source\",\"authors\":\"Wen Zhao Lee, D. Ong, K. Choo\",\"doi\":\"10.1109/SMELEC.2018.8481290\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The performance of GaN-based Gunn diode as a terahertz source has been investigated using Monte Carlo particle simulations. The 4-valley analytical band Monte Carlo model developed in the work for modelling electron transport in GaN consists of various scattering mechanisms including impact ionization. The conventional Gunn diode n+ -n−-n-n+ device structure with a notch is optimized to achieve current oscillation in the THz range by studying the effects of transit region length and bias levels. We found that a Gunn diode with 550 nm transit length is capable to achieve a 500 GHz signal of 2.61 W with 2.27% efficiency under 22 V DC and 5V RF condition.\",\"PeriodicalId\":110608,\"journal\":{\"name\":\"2018 IEEE International Conference on Semiconductor Electronics (ICSE)\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Semiconductor Electronics (ICSE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2018.8481290\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2018.8481290","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimization of wurtzite GaN-based Gunn diode as terahertz source
The performance of GaN-based Gunn diode as a terahertz source has been investigated using Monte Carlo particle simulations. The 4-valley analytical band Monte Carlo model developed in the work for modelling electron transport in GaN consists of various scattering mechanisms including impact ionization. The conventional Gunn diode n+ -n−-n-n+ device structure with a notch is optimized to achieve current oscillation in the THz range by studying the effects of transit region length and bias levels. We found that a Gunn diode with 550 nm transit length is capable to achieve a 500 GHz signal of 2.61 W with 2.27% efficiency under 22 V DC and 5V RF condition.
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