设计物理不可克隆函数时环形振荡器波形质量的电容效应

Z. Zulfikar, N. Soin, S. W. Muhamad Hatta
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引用次数: 2

摘要

本文讨论了物理不可克隆函数(PUF)应用中电容变化对环形振荡器输出波的影响。环形振荡器(RO)产生的波质在很大程度上决定了PUF的响应。我们分析了所得的反渗透波形,以确定电容值和反渗透级的理想数目。在Mentor Graphics软件包的帮助下,完成了电容变化的峰值电压分析。采用高性能PTM型晶体管(16nm、22nm、32nm和45nm技术)构成RO电路。根据研究结果,我们建议RO的级数至少为5级。然后,我们还推荐了理想电容值,作为质量和延迟之间的折衷。对于16nm、22nm、32nm和45nm工艺,电容分别为0.7fF、0.8fF、0.9fF和1fF。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Capacitance Effects of Ring Oscillator's Waveform Quality in Designing Physically Unclonable Functions
The paper discusses the effect of capacitance changes on the ring oscillator to its output wave for a physically unclonable function (PUF) application. The wave quality generated by the ring oscillator (RO) will largely determine the response of PUF. We have analyzed the resulting RO waveforms to determine the capacitor values and the ideal number of RO stages. The peak voltage analysis of the capacitance change has been done with the help of the Mentor Graphics software package. High performance PTM model transistors (16nm, 22nm, 32nm, and 45nm technologies) are selected to form the RO circuit. Based on the results of the study, we recommend that the number of RO stages is at least 5. Then, we also recommend the ideal capacitance value as a compromise between quality and delay. The capacitances should be 0.7fF, 0.8fF, 0.9fF, and 1fF for 16nm, 22nm, 32nm, and 45nm technologies, respectively.
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