Current Applied Physics最新文献

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Enhancing performance and stability of perovskite solar cells via CsPbBr3 nanocrystal-assisted antisolvent engineering
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-12-12 DOI: 10.1016/j.cap.2024.12.004
Jaewon Oh , Sung Hun Kim , Seungsun Choi , Muntae Hwang , Hyunbok Lee , Hong Seok Lee , Mee-Yi Ryu
{"title":"Enhancing performance and stability of perovskite solar cells via CsPbBr3 nanocrystal-assisted antisolvent engineering","authors":"Jaewon Oh ,&nbsp;Sung Hun Kim ,&nbsp;Seungsun Choi ,&nbsp;Muntae Hwang ,&nbsp;Hyunbok Lee ,&nbsp;Hong Seok Lee ,&nbsp;Mee-Yi Ryu","doi":"10.1016/j.cap.2024.12.004","DOIUrl":"10.1016/j.cap.2024.12.004","url":null,"abstract":"<div><div>Organic–inorganic halide perovskites show great potential, but their commercialization faces challenges due to instability, requiring controlled synthesis environments. Antisolvent engineering offers a solution by improving the formation of perovskite films under ambient conditions. In this study, CsPbBr<sub>3</sub> nanocrystals (NCs) were added to the antisolvent to enhance the performance and stability of perovskite solar cells (PSCs). By optimizing the NC concentration and the mixing ratio of antisolvents, we systematically examined their impact on film deposition. The inclusion of CsPbBr<sub>3</sub> NCs improved PSC efficiency, with the highest power conversion efficiency of 19.99 % achieved at 0.01 mg/mL NC concentration. Additionally, NC-added films demonstrated better long-term stability, losing only 12.5 % efficiency after 80 days compared to a 47.1 % loss in pristine films. These results highlight the potential of NC-assisted antisolvent engineering for producing stable, high-performance PSCs.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"71 ","pages":"Pages 37-45"},"PeriodicalIF":2.4,"publicationDate":"2024-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143170302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental and theoretical methods of practicing current applied physics, Part II
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-12-11 DOI: 10.1016/j.cap.2024.12.003
Gee Yeong Kim, Geol Moon, Woo Seok Choi
{"title":"Experimental and theoretical methods of practicing current applied physics, Part II","authors":"Gee Yeong Kim,&nbsp;Geol Moon,&nbsp;Woo Seok Choi","doi":"10.1016/j.cap.2024.12.003","DOIUrl":"10.1016/j.cap.2024.12.003","url":null,"abstract":"<div><div>This 2nd special issue highlights recent advances in material growth, optical characterization, and computational approaches for next-generation electronics and photonics. The selected papers are organized into four categories: Materials synthesis, optical and spectroscopic characterizations, computational and machine learning-based research, and electronic and magnetic techniques. These categories encompass a wide range of topics, from cutting-edge fabrication methods to advanced machine learning and analysis tools. By integrating these diverse perspectives, this issue aims to provide a comprehensive overview of the latest advances in actual practice of applied physics research. Readers will gain valuable insights into both fundamental research and practical applications across multiple disciplines within applied physics.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"71 ","pages":"Pages 46-47"},"PeriodicalIF":2.4,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143169207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A compact triple-band CPW-fed antenna laminated on FR-4 dielectric substrate material for diverse wireless applications
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-12-10 DOI: 10.1016/j.cap.2024.12.002
Sandeep Kumar Singh , Yamiko Daniel Banda , Manish Kumar , Anupam Kumar Yadav , Har Mohan Singh , M.Z.A. Yahya , S.N.F. Yusuf , Markus Diantoro
{"title":"A compact triple-band CPW-fed antenna laminated on FR-4 dielectric substrate material for diverse wireless applications","authors":"Sandeep Kumar Singh ,&nbsp;Yamiko Daniel Banda ,&nbsp;Manish Kumar ,&nbsp;Anupam Kumar Yadav ,&nbsp;Har Mohan Singh ,&nbsp;M.Z.A. Yahya ,&nbsp;S.N.F. Yusuf ,&nbsp;Markus Diantoro","doi":"10.1016/j.cap.2024.12.002","DOIUrl":"10.1016/j.cap.2024.12.002","url":null,"abstract":"<div><div>This paper investigates a compact Spider-wave hexagonal-shaped radiating stub Coplanar Waveguide (CPW)-fed multiband Microstrip Patch Antenna (MPA) for triple-band wireless applications. The proposed antenna dimension (L × W × h) is 30 × 35 × 1.6 mm<sup>3</sup> laminated on FR-4 dielectric substrate material with a dielectric constant (ε<sub>r</sub>) 4.4. The proposed antenna operates for 4th Generation Mobile Networks (4G; 2–8 GHz), 5th Generation Mobile Networks (5G; 3.6–6 GHz, bandwidth 50–400 MHz), and 6th Generation Mobile Networks (6G; Midband, 7.0–20 GHz; bandwidth &gt;160 MHz) at resonating frequencies of 3.27 GHz, 5.89 GHz, and 8.29 GHz, respectively. It shows that the proposed antenna is highly matched to input impedance and considering reflection coefficients (|S<sub>11</sub>|) of −28 dB at 3.27 GHz, −25 dB at 5.89 GHz, and −23 dB at 8.29 GHz, respectively, for triple-band applications. This compact design can be used in modern wireless communication systems requiring operation on multiple bands.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"71 ","pages":"Pages 27-36"},"PeriodicalIF":2.4,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143170301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis and Evaluation of Self–Supporting Graphitic Carbon Nitride/Carbon Nanotube (GCN/CNT) ORR/OER Electrodes in Aqueous and Non–Aqueous Media
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-12-09 DOI: 10.1016/j.cap.2024.12.001
Maricor Divinagracia-Luzadas , Kentaro Kaneko , Keisuke Hori , Julie Anne Paraggua , Suguru Noda , Joey Ocon
{"title":"Synthesis and Evaluation of Self–Supporting Graphitic Carbon Nitride/Carbon Nanotube (GCN/CNT) ORR/OER Electrodes in Aqueous and Non–Aqueous Media","authors":"Maricor Divinagracia-Luzadas ,&nbsp;Kentaro Kaneko ,&nbsp;Keisuke Hori ,&nbsp;Julie Anne Paraggua ,&nbsp;Suguru Noda ,&nbsp;Joey Ocon","doi":"10.1016/j.cap.2024.12.001","DOIUrl":"10.1016/j.cap.2024.12.001","url":null,"abstract":"<div><div>To address the sluggish kinetics of oxygen reduction and evolution reactions, it is important to focus on developing active and robust electrode structures. Herein, a GCN/CNT composite was synthesized using a facile stepladder annealing method and evaluated as an electrode for aqueous and non–aqueous systems, wherein this combination provided storage sites for the reactants and products while facilitating electron transfer, as well as active centers for oxygen reactions, making this composite a bifunctional electrode. Different mass ratios of GCN/CNT were explored to determine their effect on the catalytic properties of the electrode. Among them, the electrode with the lowest GCN content (18GCN/CNT) showed the highest activity and stability towards ORR and OER (ΔE = 1.07 V) in alkaline media, presumably due to its considerable surface area, improved electron conductivity, and nitrogen content. When employed as a Li–O<sub>2</sub> battery cathode, GCN/CNT showed lower overpotentials and better cycling stability than CNT due to the presence of GCN active sites. It delivered a discharge specific capacity of 3796 mAh g<sub>GCN/CNT</sub><sup>−1</sup> at a current density of 100 mA g<sub>cathode</sub><sup>−1</sup> (0.1C) and 35 cycles at a limited capacity of 1000 mAh g<sub>GCN/CNT</sub><sup>−1</sup>. Moreover, the reversible formation and decomposition of the Li<sub>2</sub>O<sub>2</sub> product after cycling was confirmed in the SEM images and XRD patterns.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"71 ","pages":"Pages 14-26"},"PeriodicalIF":2.4,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143170300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of calcination temperature on the microstructure and energy storage performance of bismuth layer-structured relaxor ferroelectric BaBi2Nb2O9 ceramics
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-12-06 DOI: 10.1016/j.cap.2024.11.017
Seung-Hun Han, Sam Yeon Cho, Sang Don Bu
{"title":"Effect of calcination temperature on the microstructure and energy storage performance of bismuth layer-structured relaxor ferroelectric BaBi2Nb2O9 ceramics","authors":"Seung-Hun Han,&nbsp;Sam Yeon Cho,&nbsp;Sang Don Bu","doi":"10.1016/j.cap.2024.11.017","DOIUrl":"10.1016/j.cap.2024.11.017","url":null,"abstract":"<div><div>The BaBi<sub>2</sub>Nb<sub>2</sub>O<sub>9</sub> (BBN) ceramic, calcined at a temperature of 750 °C–950 °C, was fabricated using conventional solid-state reaction method. The higher the calcination temperature, the lower intermediate phases in the raw powders. After the sintering process, a single BBN phase without intermediate phases is formed in all ceramic specimens. However, structural changes such as grain size and XRD peak shift of the (115) plane appear depending on the calcination temperature. The structural and electrical properties of the ceramics calcined at 950 °C shows the largest average grain size and lower dielectric breakdown strength (BDS) value. On the other hand, the ceramics calcined at 750 °C shows the smallest grain size and high dielectric BDS value. This suggests that BBN ceramics calcined at 750 °C have the most beneficial properties as an energy storage device.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"71 ","pages":"Pages 9-13"},"PeriodicalIF":2.4,"publicationDate":"2024-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143170299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synergistic impact of Al2O3 capping layer and deposition temperature for enhancing the ferroelectricity of undoped-HfO2 thin films Al2O3盖层和沉积温度对未掺杂hfo2薄膜铁电性的协同影响
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-11-28 DOI: 10.1016/j.cap.2024.11.016
Sang Han Ko , Seung-Eon Moon , Sung Min Yoon
{"title":"Synergistic impact of Al2O3 capping layer and deposition temperature for enhancing the ferroelectricity of undoped-HfO2 thin films","authors":"Sang Han Ko ,&nbsp;Seung-Eon Moon ,&nbsp;Sung Min Yoon","doi":"10.1016/j.cap.2024.11.016","DOIUrl":"10.1016/j.cap.2024.11.016","url":null,"abstract":"<div><div>Synergistic effects of Al<sub>2</sub>O<sub>3</sub> capping layer and deposition temperature, ranging from 220 to 280 °C, on the ferroelectric properties of undoped HfO<sub>2</sub> thin films were investigated. The use of an Al<sub>2</sub>O<sub>3</sub> capping layer during atomic layer deposition (ALD) process was verified to induce a ferroelectric orthorhombic phase in undoped HfO<sub>2</sub> thin films, leading to a net remnant polarization (2P<sub>r</sub>) of &gt;20 μC/cm<sup>2</sup> when deposited &lt;260 °C. The HfO<sub>2</sub> thin film deposited at 240 °C showed a low leakage current density of 5.7 × 10<sup>−6</sup> A/cm<sup>2</sup> at an electric field of 2 MV/cm, accompanied by a high 2P<sub>r</sub> and an endurance of &gt;10<sup>7</sup> cycles. Furthermore, the switching time for ferroelectric polarization reversal was estimated to range from 2.1 to 1.7 μs in the voltage range of 3.5–4.5 V. The results of this work demonstrated the impact of deposition temperature conditions on the ferroelectric properties of the HfO<sub>2</sub> thin films by means of the Al<sub>2</sub>O<sub>3</sub> capping process.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"71 ","pages":"Pages 1-8"},"PeriodicalIF":2.4,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142747740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved mobility in InAs nanowire FETs with sulfur-based surface treatment 硫基表面处理改善了InAs纳米线场效应管的迁移率
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-11-26 DOI: 10.1016/j.cap.2024.11.015
Yen Hsueh Wu , Hong Hyuk Kim , Jae Cheol Shin
{"title":"Improved mobility in InAs nanowire FETs with sulfur-based surface treatment","authors":"Yen Hsueh Wu ,&nbsp;Hong Hyuk Kim ,&nbsp;Jae Cheol Shin","doi":"10.1016/j.cap.2024.11.015","DOIUrl":"10.1016/j.cap.2024.11.015","url":null,"abstract":"<div><div>InAs exhibits high electron mobility, positioning it as a promising candidate for advanced nanoelectronic device materials. Specifically, nanowire structures are particularly advantageous for electronic device applications, offering benefits such as reduced leakage current and minimized short-channel effects due to their distinctive one-dimensional electron transport characteristics. However, the large surface-to-volume ratio of the nanowires not only significantly degrades their electrical properties but also complicates the formation of semiconductor-metal ohmic contacts. In this study, surface treatments involving sulfur and (NH<sub>4</sub>)<sub>2</sub>S, along with rapid thermal annealing (RTA) processes, were applied to mitigate these disadvantages, resulting in a marked enhancement of the electrical properties of InAs nanowires. The electron mobility of the InAs nanowires was elevated from 83.06 cm<sup>2</sup>/V·s to 292.718 cm<sup>2</sup>/V·s through the application of passivation and RTA processes.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"70 ","pages":"Pages 81-86"},"PeriodicalIF":2.4,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142747435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Graphene/WS2/LaVO3 heterojunction for self-powered, high-speed, and broadband photodetectors 用于自供电、高速和宽带光电探测器的石墨烯/WS2/LaVO3 异质结
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-11-23 DOI: 10.1016/j.cap.2024.11.014
Dong Hee Shin , Hosun Lee
{"title":"Graphene/WS2/LaVO3 heterojunction for self-powered, high-speed, and broadband photodetectors","authors":"Dong Hee Shin ,&nbsp;Hosun Lee","doi":"10.1016/j.cap.2024.11.014","DOIUrl":"10.1016/j.cap.2024.11.014","url":null,"abstract":"<div><div>Recently, there has been interest in developing high-performance self-driven photodetectors (PDs) using 2D-based heterostructures due to their unique optoelectronic properties. Here, we demonstrate that vertical-heterostructures based on graphene (Gr) transparent conductive electrodes, n-type 2D WS<sub>2</sub>, and p-type LaVO<sub>3</sub> realize a broadband-responsive PD covering the wavelength range of 300–850 nm. Due to the formation of an electric field at the WS<sub>2</sub>/LaVO<sub>3</sub> interface and the photovoltaic effect, this structure shows a rectifying operation with a maximum detectivity of 2.1 × 10<sup>10</sup> Jones at zero bias. Additionally, it exhibits a fast fall time of 435 μs and a 3 dB bandwidth of 2300 Hz, making it suitable for high-speed self-powered optoelectronic applications. Therefore, the TETA-Gr/WS<sub>2</sub>/LaVO<sub>3</sub> heterojunction is proposed as an excellent candidate for high-performance, self-powered, and broadband PDs.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"70 ","pages":"Pages 69-75"},"PeriodicalIF":2.4,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142720527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Oxidation effects on the optical and electrical properties of MoS2 under controlled baking temperatures 受控烘烤温度下氧化对 MoS2 光学和电学特性的影响
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-11-22 DOI: 10.1016/j.cap.2024.11.013
Takmo Jeong , Jiyoon Kim , Un Jeong Kim , Hyunjin Ji , Seok Joon Yun
{"title":"Oxidation effects on the optical and electrical properties of MoS2 under controlled baking temperatures","authors":"Takmo Jeong ,&nbsp;Jiyoon Kim ,&nbsp;Un Jeong Kim ,&nbsp;Hyunjin Ji ,&nbsp;Seok Joon Yun","doi":"10.1016/j.cap.2024.11.013","DOIUrl":"10.1016/j.cap.2024.11.013","url":null,"abstract":"<div><div>As silicon-based semiconductor technology scales down to the nanoscale, it encounters significant physical limitations, including reduced electron mobility, short-channel effects, and increased heat generation, which hinder device performance and reliability. Two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS<sub>2</sub>), offer great potential with superior electrical properties at the nanoscale, but the issue of excessive heat generation in highly integrated circuits persists. Therefore, it is essential to investigate the thermal durability of MoS<sub>2</sub> under various heating conditions and its impact on physical properties and device performance. In this study, we systematically investigated the oxidation behavior and related physical property variations of CVD-grown MoS<sub>2</sub> monolayers by baking them at different temperatures. It was clearly revealed that high-temperature baking induces <em>p</em>-doping and structural deformation, significantly altering optical and electrical properties. Despite the degradation in device performance, reduced interfacial Coulomb scattering was observed, suggesting potential for improved device stability. This study underscores the importance of understanding thermal stability to accelerate the development of 2D semiconductors for next-generation electronic devices.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"70 ","pages":"Pages 61-68"},"PeriodicalIF":2.4,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142697807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanosecond electric pulse-induced ultrafast piezoelectric responses in Co3+ substituted BiFeO3 epitaxial thin films Co3+ 取代的 BiFeO3 外延薄膜中的纳秒电脉冲诱导超快压电响应
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-11-22 DOI: 10.1016/j.cap.2024.11.012
Sanjith Unithrattil , Taewon Min , Gopinathan Anoop , Jun Young Lee , Tae Yeon kim , Shibnath Samanta , Yubo Qi , Jiahao Zhang , Seung Hyun Hwang , Hyeon Jun Lee , Kun Guo , Su Yong Lee , Yasuhiko Imai , Osami Sakata , Keisuke Shimizu , Kei Shigematsu , Hajime Hojo , Kui Yao , Masaki Azuma , Jaekwang Lee , Ji Young Jo
{"title":"Nanosecond electric pulse-induced ultrafast piezoelectric responses in Co3+ substituted BiFeO3 epitaxial thin films","authors":"Sanjith Unithrattil ,&nbsp;Taewon Min ,&nbsp;Gopinathan Anoop ,&nbsp;Jun Young Lee ,&nbsp;Tae Yeon kim ,&nbsp;Shibnath Samanta ,&nbsp;Yubo Qi ,&nbsp;Jiahao Zhang ,&nbsp;Seung Hyun Hwang ,&nbsp;Hyeon Jun Lee ,&nbsp;Kun Guo ,&nbsp;Su Yong Lee ,&nbsp;Yasuhiko Imai ,&nbsp;Osami Sakata ,&nbsp;Keisuke Shimizu ,&nbsp;Kei Shigematsu ,&nbsp;Hajime Hojo ,&nbsp;Kui Yao ,&nbsp;Masaki Azuma ,&nbsp;Jaekwang Lee ,&nbsp;Ji Young Jo","doi":"10.1016/j.cap.2024.11.012","DOIUrl":"10.1016/j.cap.2024.11.012","url":null,"abstract":"<div><div>Understanding the ultra-fast dynamics of ferroelectric materials is essential for advancing the development of next-generation high speed electronic and photonic devices. Here, the ultrafast piezoelectric response of cobalt-substituted BiFeO<sub>3</sub> (BiFe<sub>1-<em>x</em></sub>Co<sub><em>x</em></sub>O<sub>3</sub>) with <em>x</em> = 0.15, consisting of morphotropic phase boundary of monoclinic M<sub>C</sub> and M<sub>A</sub> –type phases is investigated. The real-time piezoelectric response in (001)-oriented BiFe<sub>0.85</sub>Co<sub>0.15</sub>O<sub>3</sub> (BFCO) epitaxial thin film was monitored using the time-resolved X-ray microdiffraction technique under an applied electric field with pulse widths 70 ns and 100 ns. The BFCO thin film yielded a high piezoelectric strain of approximately 0.53 % along [001] direction, with a giant <em>c</em>/<em>a</em> ratio (∼1.26) at an electric field of 1.3 MV/cm and a pulse width of 100 ns, with a piezoelectric coefficient (<span><math><mrow><msub><mi>d</mi><mn>33</mn></msub></mrow></math></span>) of 40 pm/V. This finding is an important step towards the development of a high performance lead-free piezoelectric material for ultrafast operations in advanced technological applications.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"70 ","pages":"Pages 76-80"},"PeriodicalIF":2.4,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142720528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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