69th Device Research Conference最新文献

筛选
英文 中文
Sub-10 nm epitaxial graphene nanoribbon FETs 亚10nm外延石墨烯纳米带场效应管
69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994411
K. Tahy, W. Hwang, J. Tedesco, R. Myers-Ward, P. Campbell, C. Eddy, D. Gaskill, H. Xing, A. Seabaugh, D. Jena
{"title":"Sub-10 nm epitaxial graphene nanoribbon FETs","authors":"K. Tahy, W. Hwang, J. Tedesco, R. Myers-Ward, P. Campbell, C. Eddy, D. Gaskill, H. Xing, A. Seabaugh, D. Jena","doi":"10.1109/DRC.2011.5994411","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994411","url":null,"abstract":"Graphene is being investigated as a promising candidate for electronic devices. For digital electronic devices, a substantial bandgap is necessary. It is possible to open a bandgap in graphene by quantum confinement of the carriers in patterned graphene nanoribbons (GNRs); GNRs with width W nm have a bandgap Eg∼1.3/W eV [1]. This implies that sub-10 nm wide ribbons can enable room-temperature operation of GNRs as traditional semiconductors, but with ultimate vertical scaling, and still take advantage of high current drives. To date, GNRs have been fabricated from exfoliated graphene [2] and operated by back gates, or nanometer scale ribbons produced by ‘explosive’ methods [3] that are neither controlled nor reproducible. These methods are not suitable for large-area device fabrication. In this work, we report lithographically patterned GNRs on epitaxial graphene on SiC substrates. Specifically, we show the first top-gated GNR field-effect transistors (FETs) on epi-graphene substrates that exhibit the opening of a substantial energy bandgap (exceeding ∼0.15 eV at a ribbon width of 10 nm), respectable carrier mobility (700 – 800 cm2/Vs), high current modulation (10∶1 at 300 K), and high current carrying capacity (0.3 mA/µm at VDS = 1 V) at the same time. Both single GNR and GNR array devices are reported.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133716192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Device scaling technologies for ultra-high-speed GaN-HEMTs 超高速gan - hemt的器件缩放技术
69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994530
K. Shinohara, D. Regan, I. Milosavljevic, A. Corrion, D. Brown, S. Burnham, P. Willadsen, C. Butler, A. Schmitz, S. Kim, V. Lee, A. Ohoka, P. Asbeck, M. Micovic
{"title":"Device scaling technologies for ultra-high-speed GaN-HEMTs","authors":"K. Shinohara, D. Regan, I. Milosavljevic, A. Corrion, D. Brown, S. Burnham, P. Willadsen, C. Butler, A. Schmitz, S. Kim, V. Lee, A. Ohoka, P. Asbeck, M. Micovic","doi":"10.1109/DRC.2011.5994530","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994530","url":null,"abstract":"The high frequency performance of GaN-based HEMTs has been significantly improved through innovative device scaling technologies such as AlGaN [1] or InGaN back barriers [2], thin AlN top barriers [3], lattice-matched InAlN barriers [4], ultra-short gates [5], and self-aligned gates [6]. In this paper, we review our scaling technologies for ultra-high-speed operation of GaN-HEMTs [7–10], which provide not only high yield and uniformity but also a large-scale integration of E/D-mode HEMTs for future RF and mixed-signal applications.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":"33 7-8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131779198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Compact model and performance estimation for tunneling nanowire FET 隧道纳米线场效应管的紧凑模型及性能评估
69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994495
P. Solomon, D. Frank, S. Koswatta
{"title":"Compact model and performance estimation for tunneling nanowire FET","authors":"P. Solomon, D. Frank, S. Koswatta","doi":"10.1109/DRC.2011.5994495","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994495","url":null,"abstract":"A compact model is presented which realistically reproduces TFET characteristics and allows complex circuit simulation and parameter optimization studies. The model has been applied to circuit simulations which reveal anomalous switching behavior, and to a multi-parameter optimization study which quantifies the power-performance advantage of the TFET over conventional MOSFETs.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125209238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Towards electronics at 1000 °C 1000°C下的电子学
69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994418
D. Maier, M. Alomari, N. Grandjean, J. Carlin, M. diForte-Poisson, C. Dua, S. Delage, E. Kohn
{"title":"Towards electronics at 1000 °C","authors":"D. Maier, M. Alomari, N. Grandjean, J. Carlin, M. diForte-Poisson, C. Dua, S. Delage, E. Kohn","doi":"10.1109/DRC.2011.5994418","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994418","url":null,"abstract":"High temperature electronics is up to now essentially limited to approx. 500 °C by the high temperature properties of the active semiconductor elements mostly based on SiC [1]. Sensing at even higher temperature relies therefore mostly on non-semiconductor components essentially limiting the systems complexities. However in recent years III-Nitride heterostructures, namely lattice matched InAlN/GaN heterostructures, have become an alternative. In an initial proof-of-concept experiment in 2006 [2] 1000 °C operation could be demonstrated for a short period of time.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125651964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Transport properties of CVD-grown graphene nanoribbon field-effect transistors cvd生长石墨烯纳米带场效应晶体管的输运特性
69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994450
A. Lyons, A. Behnam, E. Chow, E. Pop
{"title":"Transport properties of CVD-grown graphene nanoribbon field-effect transistors","authors":"A. Lyons, A. Behnam, E. Chow, E. Pop","doi":"10.1109/DRC.2011.5994450","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994450","url":null,"abstract":"Graphene nanoribbons (GNRs) are promising candidates for nanoelectronics as interconnects or field-effect transistors (FETs) [1,2]. Previous GNR studies used chemically derived [1] or mechanically exfoliated [2] graphene, which are not practical for large scale fabrication. In this work we present a comprehensive analysis of GNR FETs obtained by chemical vapor deposition (CVD) [3], which is promising for creating wafer-scale circuits. We demonstrate low-bias, high-bias, and temperature-dependent measurements. We find that CVD GNRs have properties comparable to the best state-of-the-art GNRs obtained by other methods, suggesting that grain boundaries play a negligible role in sub-100 nm devices. This approach also serves to identify future challenges and represents a first step towards large-scale integration.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124195132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Metal/III–V effective barrier height tuning using ALD high-κ dipoles 利用ALD高κ偶极子调谐金属/ III-V有效势垒高度
69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994453
Jenny Hu, K. Saraswat, H. Wong
{"title":"Metal/III–V effective barrier height tuning using ALD high-κ dipoles","authors":"Jenny Hu, K. Saraswat, H. Wong","doi":"10.1109/DRC.2011.5994453","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994453","url":null,"abstract":"In summary, we successfully demonstrate R<inf>C</inf> and Φ<inf>B,eff</inf> tuning of Al/n-GaAs junctions by a MIS diode structure using ALD HfO<inf>2</inf>, TiO<inf>2</inf>, and ZrO<inf>2</inf> dielectrics. We also introduce for the first time the use of HfO<inf>2</inf>/TiO<inf>2</inf>, two high-κ dielectrics in combination to further shift the Fermi level and reduce Φ<inf>B,eff</inf>. The underlying mechanism is believed to be the formation of a high-κ/high-κ dipole, which opens doors to the exploration of a multitude of other high-κ/high-κ dielectrics to ultimately achieve Φ<inf>B,eff</inf> ≤ 0. This MIS structure provides much flexibility in the design of ideal source/drain contacts for III–V MOSFETs and Schottky Barrier FETs, where in real applications highly doped substrates would significantly reduce R<inf>C</inf> and Φ<inf>B,eff</inf>. Further study of the dipole interaction and effective work function will lead to a better understanding of the physics behind metal/III–V contacts.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129523070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Giant magnetoelectric effect in nanofabricated Pb(Zr0.52Ti0.48)O3-Fe85B5Si10 cantilevers and resonant gate transistors 纳米Pb(Zr0.52Ti0.48)O3-Fe85B5Si10悬臂梁和谐振栅晶体管的巨磁电效应
69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994416
Feng Li, Z. Fang, R. Misra, S. Tadigadapa, Qiming Zhang, S. Datta
{"title":"Giant magnetoelectric effect in nanofabricated Pb(Zr0.52Ti0.48)O3-Fe85B5Si10 cantilevers and resonant gate transistors","authors":"Feng Li, Z. Fang, R. Misra, S. Tadigadapa, Qiming Zhang, S. Datta","doi":"10.1109/DRC.2011.5994416","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994416","url":null,"abstract":"Magnetoelectric (ME) laminates show higher ME coefficients than that of natural multiferroics (e.g. Cr<inf>2</inf>O<inf>3</inf>, BiTiO) by up to several orders of magnitude. Recent studies on bulk ME sensors using Fe<inf>85</inf>B<inf>5</inf>Si<inf>10</inf> (Metglas) /polyvinylidene fluoride composite show a high ME voltage coefficient of 21V/cm·Oe at 20 Hz [1]. However, bulk sensors suffer from poor epoxy bonding, aging and difficulty of integration with CMOS electronics. Here, we report, for the first time, the monolithic nanofabrication of Pb(Zr<inf>0.52</inf>Ti<inf>0.48</inf>)O<inf>3</inf> (PZT)-Fe<inf>85</inf>B<inf>5</inf>Si<inf>10</inf> ME cantilevers (Fig.1(a)) on silicon substrate which achieve 0.46 V/cm·Oe at 20 Hz and 1.8 V/cm·Oe at a resonance frequency of 8.4 KHz. Also, ME cantilever based resonant gate transistors (RGT) (Fig.1 (b)) has been designed and analyzed in comparison with ME cantilever. A 10X signal to noise ratio improvement can be reached by ME RGT. This shows the compatibility of the nanofabricated cantilever ME sensors with the Si process technology and paves the way for the future integration of MEMS based ultra-sensitive magnetic sensors with advanced Si nanoelectronics.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129220345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Carbon nanotube purified ink-based printed thin film transistors: Novel approach in controlling the electrical performance 碳纳米管纯化油墨基印刷薄膜晶体管:控制电性能的新方法
69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994420
N. Rouhi, D. Jain, P. Burke
{"title":"Carbon nanotube purified ink-based printed thin film transistors: Novel approach in controlling the electrical performance","authors":"N. Rouhi, D. Jain, P. Burke","doi":"10.1109/DRC.2011.5994420","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994420","url":null,"abstract":"In this paper we present a comprehensive study of the solution-based printed carbon nanotube purified-ink devices while introducing a new idea of controlling the electronic performance of these devices. One of the most important concerns in nanoelectronics is whether the nanotube-based devices will ever enter the reality world of circuit designs? What are the fundamental and critical issues to be resolved? Which parameters affect the device performance most? A comprehensive study of the relationship between mobility, on/off ratio, and nanotube network density is presented for the first time in detail. This study reveals a clear road map towards experimental control over the performance of solution-based nanotube thin film transistors for a wide range of state-of-the-art applications.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114280095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Unidirectional information transfer with cascaded All Spin Logic devices: A Ring Oscillator 单向信息传递与级联的所有自旋逻辑器件:环形振荡器
69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994470
S. Srinivasan, A. Sarkar, Behtash Behin-Aien, S. Datta
{"title":"Unidirectional information transfer with cascaded All Spin Logic devices: A Ring Oscillator","authors":"S. Srinivasan, A. Sarkar, Behtash Behin-Aien, S. Datta","doi":"10.1109/DRC.2011.5994470","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994470","url":null,"abstract":"Magnet based logic devices have received much attention as potential alternatives [1] to charge based electronics in order to answer the ever growing concern [2] about the limits of CMOS scaling, especially since it has been shown that the energy required to turn a magnet could be as low as a few atto-joules [3]. The recently proposed All Spin Logic (ASL) device [4] is one such scheme whereby information is stored in the state of magnets and is communicated between magnets purely through spin currents, thus operating entirely within a new paradigm: using spin as a state variable.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126853604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Lateral carrier injection with n-type modulation-doped quantum wells in VCSELs VCSELs中n型调制掺杂量子阱的横向载流子注入
69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994522
Chin-Han Lin, Yan Zheng, M. Gross, M. Rodwell, L. Coldren
{"title":"Lateral carrier injection with n-type modulation-doped quantum wells in VCSELs","authors":"Chin-Han Lin, Yan Zheng, M. Gross, M. Rodwell, L. Coldren","doi":"10.1109/DRC.2011.5994522","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994522","url":null,"abstract":"We have demonstrated a novel Field-Induced Charge-Separation Laser (FICSL) in a Vertical-Cavity Surface-Emitting Laser (VCSEL) embodiment. In addition to the initial optical modulation results that have been presented [1], we here for the first time present details on the novel lateral charge injection structure as well as the advanced bandgap engineering involved in the gate structure. These features together permit high-speed light modulation with a nearly constant injection current. The result is an entirely new concept for high-speed directly-modulated semiconductor lasers.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115268742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信