K. Shinohara, D. Regan, I. Milosavljevic, A. Corrion, D. Brown, S. Burnham, P. Willadsen, C. Butler, A. Schmitz, S. Kim, V. Lee, A. Ohoka, P. Asbeck, M. Micovic
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Device scaling technologies for ultra-high-speed GaN-HEMTs
The high frequency performance of GaN-based HEMTs has been significantly improved through innovative device scaling technologies such as AlGaN [1] or InGaN back barriers [2], thin AlN top barriers [3], lattice-matched InAlN barriers [4], ultra-short gates [5], and self-aligned gates [6]. In this paper, we review our scaling technologies for ultra-high-speed operation of GaN-HEMTs [7–10], which provide not only high yield and uniformity but also a large-scale integration of E/D-mode HEMTs for future RF and mixed-signal applications.
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