隧道纳米线场效应管的紧凑模型及性能评估

69th Device Research Conference Pub Date : 2011-06-20 DOI:10.1109/DRC.2011.5994495

P. Solomon, D. Frank, S. Koswatta

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引用次数: 26

摘要

提出了一个紧凑的模型，可以真实地再现TFET的特性，并允许复杂的电路仿真和参数优化研究。该模型已被应用于揭示异常开关行为的电路仿真，以及用于量化TFET相对于传统mosfet的功率性能优势的多参数优化研究。

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Compact model and performance estimation for tunneling nanowire FET

A compact model is presented which realistically reproduces TFET characteristics and allows complex circuit simulation and parameter optimization studies. The model has been applied to circuit simulations which reveal anomalous switching behavior, and to a multi-parameter optimization study which quantifies the power-performance advantage of the TFET over conventional MOSFETs.

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69th Device Research Conference

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