Transport properties of CVD-grown graphene nanoribbon field-effect transistors

Abstract

Graphene nanoribbons (GNRs) are promising candidates for nanoelectronics as interconnects or field-effect transistors (FETs) [1,2]. Previous GNR studies used chemically derived [1] or mechanically exfoliated [2] graphene, which are not practical for large scale fabrication. In this work we present a comprehensive analysis of GNR FETs obtained by chemical vapor deposition (CVD) [3], which is promising for creating wafer-scale circuits. We demonstrate low-bias, high-bias, and temperature-dependent measurements. We find that CVD GNRs have properties comparable to the best state-of-the-art GNRs obtained by other methods, suggesting that grain boundaries play a negligible role in sub-100 nm devices. This approach also serves to identify future challenges and represents a first step towards large-scale integration.