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Simulation of light-illuminated STM measurements 光照STM测量的仿真
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931580
K. Fukuda, M. Nishizawa, T. Tada, L. Bolotov, Kaina Suzuki, Shigeo Sato, H. Arimoto, T. Kanayama
{"title":"Simulation of light-illuminated STM measurements","authors":"K. Fukuda, M. Nishizawa, T. Tada, L. Bolotov, Kaina Suzuki, Shigeo Sato, H. Arimoto, T. Kanayama","doi":"10.1109/SISPAD.2014.6931580","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931580","url":null,"abstract":"A three dimensional simulation system for light-illuminated STM measurements is proposed for the first time combining semiconductor process and device simulators with an FDTD solver. Photo-generation rates estimated from light intensity obtained from the FDTD solver are incorporated into a semiconductor device simulation of a device structure including a semiconductor sample and an STM probe tip. Tunneling currents between the STM probe and the sample are solved consistently with current continuity equations in the semiconductor sample. The usefulness of the proposed method is demonstrated through a case of UV-laser-illuminated STM measurement of a silicon nanowire.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126572200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Challenge of adopting TCAD in the development of power semiconductor devices for automotive applications 采用TCAD开发汽车用功率半导体器件所面临的挑战
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931550
K. Hamada
{"title":"Challenge of adopting TCAD in the development of power semiconductor devices for automotive applications","authors":"K. Hamada","doi":"10.1109/SISPAD.2014.6931550","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931550","url":null,"abstract":"Due to the mass consumption of fossil fuels since the 20th century, the automotive industry is facing various issues, such as the depletion of fuel resources and worsening air quality. Power semiconductor devices can help to resolve these issues by facilitating the development of technologies to save energy and diversify fuel usage. This paper describes the requirements and outlook for power semiconductor devices. It also introduces an example of the adoption of technology computer aided design (TCAD) in power semiconductor device development.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114537226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors 三维多子带集成蒙特卡罗模拟finfet和纳米线晶体管
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931553
C. Sampedro, L. Donetti, F. Gámiz, A. Godoy, F. J. García-Ruiz, V. Georgiev, S. Amoroso, C. Riddet, E. Towie, A. Asenov
{"title":"3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors","authors":"C. Sampedro, L. Donetti, F. Gámiz, A. Godoy, F. J. García-Ruiz, V. Georgiev, S. Amoroso, C. Riddet, E. Towie, A. Asenov","doi":"10.1109/SISPAD.2014.6931553","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931553","url":null,"abstract":"In this paper we present the development of a 3D Multi Subband Ensemble Monte Carlo (3DMSB-EMC) tool targeting the simulation of nanoscaled FinFETs and nanowire transistors. In order to deliver computational efficiency, we have developed a self-consistent framework that couples a MSB-EMC transport engine for a 1D electron gas with a 3DPoisson-2DSchrödinger solver. Here we use a FinFET with a physical channel length of 15nm as an example to demonstrate the applicability and highlight the benefits of the simulation framework. A comparison of the 3DMSB-EMC with Non-Equilibrium Green's Functions (NEGFs) in the ballistic limit is used to verify and validate our approach.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"133 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116045418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A technique to model the AC response of diffuse layers at electrode/electrolyte interfaces and to efficiently simulate impedimetric biosensor arrays for many analyte configurations 一种模拟电极/电解质界面上扩散层交流响应的技术，并有效地模拟许多分析物配置的阻抗生物传感器阵列
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931636
F. Pittino, L. Selmi
{"title":"A technique to model the AC response of diffuse layers at electrode/electrolyte interfaces and to efficiently simulate impedimetric biosensor arrays for many analyte configurations","authors":"F. Pittino, L. Selmi","doi":"10.1109/SISPAD.2014.6931636","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931636","url":null,"abstract":"We describe a technique to overcome the numerical difficulties in the accurate description of the small signal AC response of the thin electrical double layers at the surface of impedimetric biosensor electrodes. The technique significantly reduces the computational burden of the calculation, thus enabling the fast simulation of many analyte configurations.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122169841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Device and process modeling: 20 Years at Intel's other fab 器件和工艺建模:在英特尔其他工厂工作了20年
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931551
M. Stettler
{"title":"Device and process modeling: 20 Years at Intel's other fab","authors":"M. Stettler","doi":"10.1109/SISPAD.2014.6931551","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931551","url":null,"abstract":"Embedding TCAD engineers in technology working groups has been an integral part of Intel's process development strategy since the company's inception. While this strategy remains the same, the challenges faced and the tools used by TCAD has undergone dramatic change over the last 20 years. This talk will discuss three recent trends in process and device TCAD: the rise in the use of “atomistic” scale simulations, the focus on modeling defects, and the continuing need to bridge new, more physically rigorous approaches to older, more computationally efficient methods. These trends will be illustrated with recent TCAD studies conducted at Intel.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115645598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Development of an electro-thermal resistive switching model based on O-Frenkel pairs to study reset and set mechanisms in HfO2-based RRAM cells 基于O-Frenkel对的电热电阻开关模型的建立，用于研究hfo2基RRAM电池的复位和设置机制
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931559
O. Cueto, A. Payet, T. Cabout
{"title":"Development of an electro-thermal resistive switching model based on O-Frenkel pairs to study reset and set mechanisms in HfO2-based RRAM cells","authors":"O. Cueto, A. Payet, T. Cabout","doi":"10.1109/SISPAD.2014.6931559","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931559","url":null,"abstract":"An electro-thermal resistive switching model based on O-Frenkel pairs is presented. This model relies on partial differential equations and is used to simulate reset and set mechanisms for HfO2-based RRAM devices starting from an existing conductive filament. First simulations indicate that the model can fairly reproduce experimental ON and OFF resistances.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121266147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nano-meter scaled gate area high-K dielectrics with trap-assisted tunneling and random telegraph noise 具有陷阱辅助隧道和随机电报噪声的纳米尺度栅区高k介电体
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931608
P. Lin, Zhe-An Andy Lee, C. Yao, Hsin-Jyun Lin, Hiroshi Watanabe
{"title":"Nano-meter scaled gate area high-K dielectrics with trap-assisted tunneling and random telegraph noise","authors":"P. Lin, Zhe-An Andy Lee, C. Yao, Hsin-Jyun Lin, Hiroshi Watanabe","doi":"10.1109/SISPAD.2014.6931608","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931608","url":null,"abstract":"If the trap density is 1012 cm-2, then there are only one trap in 10nm × 10nm on average. Accordingly, three-dimensional simulation that is sensitive to the movement of sole electron is indispensable for carefully investigating the reliability issues related to local traps in future nano-electron devices. As a demonstration, we investigate Random Telegraph Noise (RTN) and Trap-Assisted Tunneling (TAT) at the same moment in 5nm×5nm gate area high-K dielectrics (EOT= 0.8nm to 0.47nm). The simulation is carried out with respect to various gate biases, physical thickness of high-K, interlayer suboxide thickness, and dielectric constant of high-K. It is suggested that thinner suboxide and higher permittivity can suppress the increase of the leakage current which is caused by TAT.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131020442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MC/DD study of metal grain induced current variability in a nanoscale InGaAs FinFET 纳米InGaAs FinFET中金属晶粒诱导电流变异性的MC/DD研究
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931611
N. Seoane, M. Aldegunde, K. Kalna, A. García-Loureiro
{"title":"MC/DD study of metal grain induced current variability in a nanoscale InGaAs FinFET","authors":"N. Seoane, M. Aldegunde, K. Kalna, A. García-Loureiro","doi":"10.1109/SISPAD.2014.6931611","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931611","url":null,"abstract":"The on- and off-current variability due to TiN metal grain workfunction fluctuations in a 10.4 nm gate length In0.53Ga0.47As FinFET is analysed using two in-house simulation tools based on the finite element method: a 3D Drift-Diffusion device simulator and a 3D ensemble Monte Carlo simulator, that include quantum-corrections through the density gradient approach. The Id-Vg characteristics have been compared in the sub-threshold region against ballistic NEGF simulations, showing an excellent agreement. Monte Carlo simulations, considering a 〈100〉 channel orientation, show a larger on-current variability, over a 120% increase, compared with the results from Drift-Diffusion simulations. In this study, three different metal grain sizes (10, 7 and 5 nm) have been analysed. We have observed that the underestimation of the variability when using Drift-Diffusion simulations is increasing with a reduction in the grain size.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132446064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Variability-aware compact model strategy for 20-nm bulk MOSFETs 20nm块体mosfet的可变感知紧凑模型策略
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931621
Xingsheng Wang, D. Reid, Liping Wang, A. Burenkov, C. Millar, B. Cheng, André Lange, J. Lorenz, E. Baer, A. Asenov
{"title":"Variability-aware compact model strategy for 20-nm bulk MOSFETs","authors":"Xingsheng Wang, D. Reid, Liping Wang, A. Burenkov, C. Millar, B. Cheng, André Lange, J. Lorenz, E. Baer, A. Asenov","doi":"10.1109/SISPAD.2014.6931621","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931621","url":null,"abstract":"In this paper a variability-aware compact modeling strategy is presented for 20-nm bulk planar technology, taking into account the critical dimension long-range process variation and local statistical variability. Process and device simulations and statistical simulations for a wide range of combinations of L and W are carefully carried out using a design of experiments approach. The variability aware compact model strategy features a comprehensively extracted nominal model and two groups of selected parameters for extractions of the long-range process variation and statistical variability. The unified variability compact modeling method can provide a simulation frame for variability aware technology circuit co-optimization.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121063601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Electromigration in solder bumps: A mean-time-to-failure TCAD study 焊料凸起处的电迁移:平均失效时间TCAD研究
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931603
H. Ceric, W. Zisser, M. Rovitto, S. Selberherr
{"title":"Electromigration in solder bumps: A mean-time-to-failure TCAD study","authors":"H. Ceric, W. Zisser, M. Rovitto, S. Selberherr","doi":"10.1109/SISPAD.2014.6931603","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931603","url":null,"abstract":"The mechanical and electrical properties of solder bumps influence the overall reliability of 3D ICs. A characteristic of solder bumps is that during technology processing and usage their material composition changes. This compositional transformation is enhanced by electromigration and leads to the formation of voids which can cause a complete failure of a solder bump. In this paper we present a compact model for prediction of the mean-time-to-failure of solder bumps under the influence of electromigration.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121239348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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