3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors

C. Sampedro, L. Donetti, F. Gámiz, A. Godoy, F. J. García-Ruiz, V. Georgiev, S. Amoroso, C. Riddet, E. Towie, A. Asenov
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引用次数: 13

Abstract

In this paper we present the development of a 3D Multi Subband Ensemble Monte Carlo (3DMSB-EMC) tool targeting the simulation of nanoscaled FinFETs and nanowire transistors. In order to deliver computational efficiency, we have developed a self-consistent framework that couples a MSB-EMC transport engine for a 1D electron gas with a 3DPoisson-2DSchrödinger solver. Here we use a FinFET with a physical channel length of 15nm as an example to demonstrate the applicability and highlight the benefits of the simulation framework. A comparison of the 3DMSB-EMC with Non-Equilibrium Green's Functions (NEGFs) in the ballistic limit is used to verify and validate our approach.
三维多子带集成蒙特卡罗模拟finfet和纳米线晶体管
在本文中,我们提出了一个三维多子带集成蒙特卡罗(3DMSB-EMC)工具的开发,目标是模拟纳米级finfet和纳米线晶体管。为了提高计算效率,我们开发了一个自一致的框架,将用于一维电子气体的MSB-EMC传输引擎与3DPoisson-2DSchrödinger求解器耦合在一起。在这里,我们使用一个物理通道长度为15nm的FinFET作为示例来演示该仿真框架的适用性并突出其优点。用3DMSB-EMC与非平衡格林函数(negf)在弹道极限下的比较验证了我们的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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