Development of an electro-thermal resistive switching model based on O-Frenkel pairs to study reset and set mechanisms in HfO2-based RRAM cells

Abstract

An electro-thermal resistive switching model based on O-Frenkel pairs is presented. This model relies on partial differential equations and is used to simulate reset and set mechanisms for HfO2-based RRAM devices starting from an existing conductive filament. First simulations indicate that the model can fairly reproduce experimental ON and OFF resistances.