Device and process modeling: 20 Years at Intel's other fab

Abstract

Embedding TCAD engineers in technology working groups has been an integral part of Intel's process development strategy since the company's inception. While this strategy remains the same, the challenges faced and the tools used by TCAD has undergone dramatic change over the last 20 years. This talk will discuss three recent trends in process and device TCAD: the rise in the use of “atomistic” scale simulations, the focus on modeling defects, and the continuing need to bridge new, more physically rigorous approaches to older, more computationally efficient methods. These trends will be illustrated with recent TCAD studies conducted at Intel.