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2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)最新文献

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New perspective on lifetime prediction approach for BTI and HCI stressed device and its impact on circuit lifetime BTI和HCI应力器件寿命预测方法的新视角及其对电路寿命的影响
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931632
Min-Chul Park, G. Yang, Joon-Sung Yang, Keun-Ho Lee, Young-Kwan Park
{"title":"New perspective on lifetime prediction approach for BTI and HCI stressed device and its impact on circuit lifetime","authors":"Min-Chul Park, G. Yang, Joon-Sung Yang, Keun-Ho Lee, Young-Kwan Park","doi":"10.1109/SISPAD.2014.6931632","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931632","url":null,"abstract":"Device and circuit lifetime is investigated for poly silicon gated MOSFET. New findings are: (1) More than 1 order lifetime is increased by quantifying the influence of poly depletion effect (PDE) and accumulated trap charge effect (ATCE). (2) We demonstrate that conventional lifetime model produce an incorrect and reverse lifetime result for each degradation data measured by fast and slow method. (3) We evaluate the impact on circuit parameter, propagation delay time (tPD), degradation in the light of new findings.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124682538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Cell-centered finite volume schemes for semiconductor device simulation 半导体器件模拟的以单元为中心的有限体积方案
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931639
K. Rupp, M. Bina, Y. Wimmer, A. Jungel, T. Crasser
{"title":"Cell-centered finite volume schemes for semiconductor device simulation","authors":"K. Rupp, M. Bina, Y. Wimmer, A. Jungel, T. Crasser","doi":"10.1109/SISPAD.2014.6931639","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931639","url":null,"abstract":"Although the traditional finite volume scheme based on boxes obtained from the dual Voronoi grid has been employed successfully for classical semiconductor device simulation for decades, certain drawbacks such as the required Delaunay property of the underlying mesh limit its applicability for two-and particularly three-dimensional device simulations on unstructured meshes. We propose a discretization based on mesh cells rather than dual boxes around vertices, which circumvents the Delaunay requirement, yet preserves all the important features of the traditional method such as exact current conservation. The applicability of our method is demonstrated for classical and semiclassical models to tackle current engineering problems: We consider three-dimensional drift-diffusion simulations of geometric variations of the fin in a FinFET and present results from spatially two-dimensional simulations of a high-voltage nLDMOS device based on spherical harmonics expansions for direct solutions of the Boltzmann transport equation.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"377 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124708956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modelinig and algorithms of device simulation for ultra-high speed devices 超高速器件仿真建模与算法研究
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931604
H. Mutoh
{"title":"Modelinig and algorithms of device simulation for ultra-high speed devices","authors":"H. Mutoh","doi":"10.1109/SISPAD.2014.6931604","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931604","url":null,"abstract":"The physical models and algorithms of device simulation for ultra-high speed devices are proposed. The propagation of electromagnetic field induced by electrodes cannot be ignored for analyses of ultra-high speed devices. In order to obtain the consistent basic equations for the both of device and electromagnetic field propagation simulations, we newly introduce Nakanishi-Lautrup (NL) field of quantum electrodynamics (QED) to the electromagnetic field model. The models and algorithms are reported with some calculation results.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125602851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Time dependent 3-D statistical KMC simulation of high-k degradation including trap generation and electron capture/emission dynamic 高钾离子降解的三维统计KMC模拟，包括陷阱的产生和电子捕获/发射动态
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931569
Yijiao Wang, Peng Huang, Xiaoyan Liu, G. Du, Jinfeng Kang
{"title":"Time dependent 3-D statistical KMC simulation of high-k degradation including trap generation and electron capture/emission dynamic","authors":"Yijiao Wang, Peng Huang, Xiaoyan Liu, G. Du, Jinfeng Kang","doi":"10.1109/SISPAD.2014.6931569","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931569","url":null,"abstract":"A comprehensive time dependent three dimensional simulation framework for high-k degradation is developed. In this framework, the models that account for trap generation in high-k, capture/emission dynamic, and statistical variability are incorporated in the simulation. The influence of the trap generation model on distribution of traps, threshold voltage, and the amount of trapped charge is investigated in detail, thereby lay a solid foundation for predicting more accurate design margins at circuit/system level in the future.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"24 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133241248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Density-functional-theory-based study of monolayer MoS2 on oxide 基于密度泛函理论的氧化物表面单层MoS2的研究
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931566
A. Valsaraj, L. F. Register, S. Banerjee, Jiwon Chang
{"title":"Density-functional-theory-based study of monolayer MoS2 on oxide","authors":"A. Valsaraj, L. F. Register, S. Banerjee, Jiwon Chang","doi":"10.1109/SISPAD.2014.6931566","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931566","url":null,"abstract":"Monolayer transition metal dichalcogenides (TMDs) are novel gapped two-dimensional materials with unique electrical and optical properties. Here, we study the effect of dielectric oxide slabs on the electronic structure of monolayer MoS2 using density functional theory (DFT) calculations. We also have simulated the effects of O-vacancies in the first few layers of the oxide on the band structure of the MoS2-oxide system, showing here results for vacancies in topmost/MoS2-adjacent O layer.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131340436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An analysis of the effect of hydrogen incorporation on electron traps in silicon nitride 氮化硅中含氢对电子阱影响的分析
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931584
K. Sonoda, E. Tsukuda, M. Tanizawa, K. Ishikawa, Y. Yamaguchi
{"title":"An analysis of the effect of hydrogen incorporation on electron traps in silicon nitride","authors":"K. Sonoda, E. Tsukuda, M. Tanizawa, K. Ishikawa, Y. Yamaguchi","doi":"10.1109/SISPAD.2014.6931584","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931584","url":null,"abstract":"The effect of hydrogen incorporation into nitrogen vacancies in silicon nitride on electron trap is analyzed using density functional theory method. A hydrogen atom is attached to a dangling bond which is well separated from other dangling bonds, whereas it is not attached to ones which strongly interact because of lattice distortion. An electron trap level caused by nitrogen vacancy becomes shallow by hydrogen incorporation. An electron is trapped in a deep level created by a silicon dangling bond before hydrogen incorporation, whereas it is trapped in a shallow level created by an anti-bonding state of a siliconsilicon bond after hydrogen incorporation. The simulation results qualitatively explain the experiment in which reduced hydrogen content in silicon nitride shows superior retention characteristics of the programmed state.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133900903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode 静态和动态工作模式下AlGaN/GaN电子器件的自热效应建模
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931606
A. Tallarico, P. Magnone, E. Sangiorgi, C. Fiegna
{"title":"Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode","authors":"A. Tallarico, P. Magnone, E. Sangiorgi, C. Fiegna","doi":"10.1109/SISPAD.2014.6931606","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931606","url":null,"abstract":"In this paper, we present a study of the self-heating effects in GaN-based power devices during static and dynamic operation mode by means of Sentaurus TCAD. A physical model interface (PMI), accounting for the temperature dependence of the thermal boundary resistance (TBR), has been implemented in the simulator in order to realistically model self-heating effects. In particular, we take into account for the TBR associated to the nucleation layer between GaN and SiC substrate. Moreover, the thermal contribution of the mutual heating among adjacent devices has been considered. Finally, we have investigated the influence of the temperature on the surface charges trapping and de-trapping phenomena showing two different traps occupancy transients. While one of the two occurs also in the isothermal condition, the second one is temperature activated.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117282024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The impact of fin/sidewall/gate line edge roughness on trapezoidal bulk FinFET devices 翅片/侧壁/栅极线边缘粗糙度对梯形体FinFET器件的影响
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931618
Wen-Tsung Huang, Yiming Li
{"title":"The impact of fin/sidewall/gate line edge roughness on trapezoidal bulk FinFET devices","authors":"Wen-Tsung Huang, Yiming Li","doi":"10.1109/SISPAD.2014.6931618","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931618","url":null,"abstract":"In this work, the DC characteristic variability of 14-nm-gate HKMG trapezoidal bulk FinFET induced by different line edge roughness (LER) is for the first time studied by using experimentally validated 3D device simulation. By considering a time-domain Gaussian noise function, we compare four types of LER: Fin-LER inclusive of resist-LER and spacer-LER, sidewall-LER, and gate-LER for the trapezoidal bulk FinFET with respect to different fin angles. The resist-LER and sidewall-LER have large impact on characteristics fluctuation. For each type of LER, the Vth fluctuation is comparable among fin angles.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127654056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Investigation of quantum transport in nanoscaled GaN high electron mobility transistors 纳米级氮化镓高电子迁移率晶体管中的量子输运研究
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931577
O. Baumgartner, Z. Stanojević, L. Filipovic, A. Grill, T. Grasser, H. Kosina, M. Karner
{"title":"Investigation of quantum transport in nanoscaled GaN high electron mobility transistors","authors":"O. Baumgartner, Z. Stanojević, L. Filipovic, A. Grill, T. Grasser, H. Kosina, M. Karner","doi":"10.1109/SISPAD.2014.6931577","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931577","url":null,"abstract":"In this paper, a comprehensive investigation of quantum transport in nanoscaled gallium nitride (GaN) high electron mobility transistors (HEMTs) is presented. A simulation model for quantum transport in nanodevices on unstructured grids in arbitrary dimension and for arbitrary crystal directions has been developed. The model has been implemented as part of the Vienna-Schrödinger-Poisson simulation and modeling framework. The transport formalism is based on the quantum transmitting boundary method. A new approach to reduce its computational effort has been realized. The model has been used to achieve a consistent treatment of quantization and transport effects in deeply scaled asymmetric GaN HEMTs. The self-consistent electron concentration, conduction band edges and ballistic current have been calculated. The effects of strain relaxation at the heterostructure interfaces on the potential and carrier concentration have been shown.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129238742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Interplay among Bilayer pseudoSpin field-effect transistor (BiSFET) performance, BiSFET scaling and condensate strength 双层伪自旋场效应晶体管(BiSFET)性能、BiSFET缩放和冷凝强度之间的相互作用
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931625
X. Mou, L. Register, S. Banerjee
{"title":"Interplay among Bilayer pseudoSpin field-effect transistor (BiSFET) performance, BiSFET scaling and condensate strength","authors":"X. Mou, L. Register, S. Banerjee","doi":"10.1109/SISPAD.2014.6931625","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931625","url":null,"abstract":"It has been proposed that superfluid excitonic condensates may be possible in dielectrically separated graphene layers or other two-dimensional materials. This possibility was the basis for the proposed ultra-low power Bilayer pseudoSpin Field-effect Transistor (BiSFET). Previously, we developed an atomistic tight-binding quantum transport simulator, including the non-local exchange interaction, and used it to demonstrate the essential excitonic superfluid transport physics which underlies the proposed BiSFET in presence of such a condensate. Here we report on extension of that work to analyze dependencies on device scaling and the condensate strength of BiSFET performance and required device parameters including interlayer conductance, and critical current and voltage.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129547349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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