2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)最新文献_第7页

A three-dimensional TCAD system focused on power and nano-scaled devices applications 一个三维TCAD系统，专注于功率和纳米级器件的应用

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931597

Yasuyuki Ookura, Nobuhiko Kato, Shin-ichiroh Kobayashi, T. Kuwabara, Masanori Harada, Kentaro Yamaguchi, H. Koike

引用次数: 0

Verilog-A compact model for oxide-based resistive random access memory (RRAM) verilog -基于氧化物的电阻随机存取存储器(RRAM)的紧凑型模型

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931558

Zizhen Jiang, Shimeng Yu, Yi Wu, Jesse Engel, X. Guan, H. Wong

引用次数: 111

Investigation of quantum transport in nanoscaled GaN high electron mobility transistors 纳米级氮化镓高电子迁移率晶体管中的量子输运研究

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931577

O. Baumgartner, Z. Stanojević, L. Filipovic, A. Grill, T. Grasser, H. Kosina, M. Karner

引用次数: 1

The impact of fin/sidewall/gate line edge roughness on trapezoidal bulk FinFET devices 翅片/侧壁/栅极线边缘粗糙度对梯形体FinFET器件的影响

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931618

Wen-Tsung Huang, Yiming Li

引用次数: 8

Physical modeling of NBTI: From individual defects to devices NBTI的物理建模:从单个缺陷到器件

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931568

G. Rzepa, W. Goes, G. Rott, K. Rott, M. Karner, C. Kernstock, B. Kaczer, H. Reisinger, T. Grasser

引用次数: 21

A unified circuit model for ferroelectrics 铁电体的统一电路模型

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931585

K. Auluck, E. Kan, S. Rajwade

引用次数: 1

Unifying self-heating and aging simulations with TMI2 统一TMI2的自加热和老化模拟

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931631

Wai-kit Lee, Kasa Huang, Jim C. Liang, Juan-Yi Chen, Cheng Hsiao, Ke-Wei Su, Chung-Kai Lin, M. Jeng

引用次数: 2

Electron-phonon interaction in Si nanowire devices: Low field mobility and self-consistent EM NEGF simulations 硅纳米线器件中的电子-声子相互作用:低场迁移率和自一致的EM NEGF模拟

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931627

G. Mil'nikov, N. Mori

引用次数: 0

0.5V operation and performance of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture 基于伪自旋- finfet结构的非易失SRAM电池的0.5V工作和性能

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931624

Y. Shuto, Shuu'ichirou Yamamoto, S. Sugahara

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引用次数: 4

BTB tunneling in InAs/Si heterojunctions

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI: 10.1109/SISPAD.2014.6931609

Lidija Filipović, O. Baumgartner, Z. Stanojević, H. Kosina

引用次数: 0