一个三维TCAD系统，专注于功率和纳米级器件的应用

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI:10.1109/SISPAD.2014.6931597

Yasuyuki Ookura, Nobuhiko Kato, Shin-ichiroh Kobayashi, T. Kuwabara, Masanori Harada, Kentaro Yamaguchi, H. Koike

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引用次数: 0

摘要

针对超小型到大功率半导体器件的需求，提出了一种将第一性原理计算器、过程和器件模拟器紧密耦合的三维TCAD系统。利用第一性原理计算器推导出肖特基势垒高度。在过程模拟器中，提出了一种鲁棒的高速地形算法，为复杂三维结构的处理提供了方便。由于砷失活而产生的三维效应已经被证实。在器件模拟器中，对宽间隙器件的高压击穿特性进行了鲁棒计算。

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A three-dimensional TCAD system focused on power and nano-scaled devices applications

A new 3-D TCAD system has been proposed aiming close coupling of first-principles calculator, process, and device simulators in response to requirements for ultra-small to high-power semiconductor devices. Using the first-principles calculator Schottky-barrier height has been derived. In the process simulator, a robust and high-speed topographical algorithm has been newly proposed and thus easier handling of complicated 3-D structure has been provided. And a 3-D effect due to arsenic deactivation has been demonstrated. In the device simulator, robust calculation for high-voltage breakdown characteristics of wide-gap devices has been demonstrated.

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2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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