Channel-size dependent dopant placement in silicon nanowires

H. Ryu, Jongseob Kim, K. Hong
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Abstract

Sensitivity of Phosphorus dopant placement to the channel size of highly doped silicon nanowires is studied using a 10-band sp3 d5 s* tight-binding approach coupled to self-consistent simulations. Extending the simulation scope to realistically sized nanowires, we observed that uniform doping does not necessarily reduce the channel energy compared to surface-oriented doping when the diameter of a nanowire cross-section is smaller than 20 nm, whilst uniform doping lowers the energy, making the channel more stable at larger cross-sections. This size-dependency, firmly connected to the recent experiment, is understood well in detail by investigating channel electrostatics.
硅纳米线中通道尺寸相关的掺杂物放置
采用10波段sp3 d5 s*紧密结合方法与自一致模拟相结合,研究了磷掺杂剂放置对高掺杂硅纳米线通道尺寸的敏感性。将模拟范围扩展到实际尺寸的纳米线,我们观察到当纳米线截面直径小于20 nm时,均匀掺杂与表面取向掺杂相比不一定会降低通道能量,而均匀掺杂降低了能量,使通道在更大的横截面下更稳定。这种尺寸依赖性与最近的实验密切相关,通过研究通道静电可以很好地理解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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