{"title":"Channel-size dependent dopant placement in silicon nanowires","authors":"H. Ryu, Jongseob Kim, K. Hong","doi":"10.1109/SISPAD.2014.6931629","DOIUrl":null,"url":null,"abstract":"Sensitivity of Phosphorus dopant placement to the channel size of highly doped silicon nanowires is studied using a 10-band sp3 d5 s* tight-binding approach coupled to self-consistent simulations. Extending the simulation scope to realistically sized nanowires, we observed that uniform doping does not necessarily reduce the channel energy compared to surface-oriented doping when the diameter of a nanowire cross-section is smaller than 20 nm, whilst uniform doping lowers the energy, making the channel more stable at larger cross-sections. This size-dependency, firmly connected to the recent experiment, is understood well in detail by investigating channel electrostatics.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2014.6931629","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Sensitivity of Phosphorus dopant placement to the channel size of highly doped silicon nanowires is studied using a 10-band sp3 d5 s* tight-binding approach coupled to self-consistent simulations. Extending the simulation scope to realistically sized nanowires, we observed that uniform doping does not necessarily reduce the channel energy compared to surface-oriented doping when the diameter of a nanowire cross-section is smaller than 20 nm, whilst uniform doping lowers the energy, making the channel more stable at larger cross-sections. This size-dependency, firmly connected to the recent experiment, is understood well in detail by investigating channel electrostatics.