Nuclear Instruments and Methods最新文献_第10页

Ion implanted cathode doping notches in GaAs Gunn material GaAs Gunn材料中的离子注入阴极掺杂缺口

Nuclear Instruments and Methods Pub Date : 1981-04-15 DOI: 10.1016/0029-554X(81)90799-0

A. Ezis, D.V. Morgan, M.J. Howes

引用次数: 2

Modification on near-surface precipitation in AlGE alloy by ion irradiation 铝近表面沉淀的改性离子辐照GE合金

Nuclear Instruments and Methods Pub Date : 1981-04-15 DOI: 10.1016/0029-554X(81)90725-4

K.L. Kusbridge

{"title":"Modification on near-surface precipitation in AlGE alloy by ion irradiation","authors":"K.L. Kusbridge","doi":"10.1016/0029-554X(81)90725-4","DOIUrl":"https://doi.org/10.1016/0029-554X(81)90725-4","url":null,"abstract":"<div>A model including precipitate dissolution and solute segregation is used to explain the changes in precipitate distribution during 100 keV Al+ ion irradiation of AlGe alloy. It is found by TEM that Ge precipitates in the peak damage region i.e. <100 nm from the surface are destroyed by prolonged irradiation to doses greater than 28 dpa, whereas precipitates near the tail of the damage profile i.e. 100–250 nm from the surface, continue to grow. SIMS has shown that the dissolution of near-surface precipitates is accompanied by segregation of Ge to depths below the damage peak, indicating that Ge segregates down defect gradients.The results show that solute segregation is an important factor in determining precipitate stability. It is thought that the reversal in precipitate behaviour from growth to dissolution occurs because the solute depletion in the matrix near the surface reduces the solute arrival rate at the precipitate sufficiently for recoil dissolution to determine the precipitate behaviour. A preliminary study on low temperature irradiation of AlGe shows that Ge solute re-distribution rate is limited by the concentration and mobility of vacancy-solute complexes, and not by the rate of precipitate dissolution.</div>","PeriodicalId":100971,"journal":{"name":"Nuclear Instruments and Methods","volume":"182 ","pages":"Pages 521-529"},"PeriodicalIF":0.0,"publicationDate":"1981-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0029-554X(81)90725-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72242651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

TEM study of bubble-evolution related to the absence of a second generation of blisters in low energy He bombarded Nb 低能量He轰击Nb中与不存在第二代气泡有关的气泡演化的TEM研究

Nuclear Instruments and Methods Pub Date : 1981-04-15 DOI: 10.1016/0029-554X(81)90727-8

R.G. Saint-Jacques , G. Veilleux

{"title":"TEM study of bubble-evolution related to the absence of a second generation of blisters in low energy He bombarded Nb","authors":"R.G. Saint-Jacques , G. Veilleux","doi":"10.1016/0029-554X(81)90727-8","DOIUrl":"https://doi.org/10.1016/0029-554X(81)90727-8","url":null,"abstract":"<div>Results are presented of work using transmission electron microscopy to examine the evolution of the structure related to the absence of new blisters after high fluence He bombardment of Nb. At 500°C, the mean bubble diameter increases from 3.2 nm at 1.9 × 1017 He cm−2 (fluence smaller than the blistering threshold) to 9.7 nm at 9.4 × 1018 He cm−2 (fluence larger than the fluence necessary for the sputtering of the blisters). This increase is done at the expense of the bubble density which decreases from 5.5 × 1012 cm−2 to 2.8 × 1011 cm−2. However it is remarkable that the total volume of bubbles remains constant. Due to He saturation in the implanted layer the pressure is constant. It is shown that the diameter increase and density decrease mean a lowering of the stresses in the membranes between bubbles, thus preventing the formation of new blisters. This suggests that large bubbles can continue to grow, without becoming overpressurized, by absorbing mostly radiation-produced vacancies whereas small bubbles shrink by absorbing mostly interstials and releasing He through radiation assisted diffusion.</div>","PeriodicalId":100971,"journal":{"name":"Nuclear Instruments and Methods","volume":"182 ","pages":"Pages 539-544"},"PeriodicalIF":0.0,"publicationDate":"1981-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0029-554X(81)90727-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72243501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

A graphical method to obtain the implantation regime required for heavily doped deep semiconductor junctions 获得重掺杂深半导体结所需注入状态的图解方法

Nuclear Instruments and Methods Pub Date : 1981-04-15 DOI: 10.1016/0029-554X(81)90783-7

B. Raicu

引用次数: 0

Retardation and suppression of nickel silicide formation by N+ implantation N+注入延缓和抑制硅化镍的形成

Nuclear Instruments and Methods Pub Date : 1981-04-15 DOI: 10.1016/0029-554X(81)90793-X

D. M. Scott, L. Wielunski, H. Seefeld, M. Nicolet

引用次数: 14

Evidence of surface migration and formation of catalytically “inactive” Pt in corrosion studies of Pt+ implanted Ti 在Pt+注入Ti的腐蚀研究中，表面迁移和催化“非活性”Pt形成的证据

Nuclear Instruments and Methods Pub Date : 1981-04-15 DOI: 10.1016/0029-554X(81)90833-8

B.R. Appleton , E.J. Kelly , C.W. White , N.G. Thompson , B.D. Lichter

{"title":"Evidence of surface migration and formation of catalytically “inactive” Pt in corrosion studies of Pt+ implanted Ti","authors":"B.R. Appleton , E.J. Kelly , C.W. White , N.G. Thompson , B.D. Lichter","doi":"10.1016/0029-554X(81)90833-8","DOIUrl":"10.1016/0029-554X(81)90833-8","url":null,"abstract":"<div>This investigation is part of an ongoing research project directed at applying the techniques of ion implantation doping and ion scattering analysis to identify the mechanisms associated with the anodic dissolution of TiPt alloys. The TiPt alloys produced by ion implantation were electrochemically examined in hydrogen-saturated 1N H2SO4 by both potentiostatic polarization and open-circuit potential methods. In this study, Ti samples implanted to relatively high doses (5.4 × 1015 −2.9 × 1016 atoms/cm2) were examined by ion scattering analysis at various stages in the electrochemical measurements. Quantitative measurements showed that the majority of the implanted Pt accumulated on the surface during anodic dissolution and underwent large scale surface migration. Evidence is also presented for the transition of the Pt on the surface from a catalytically “active” to “inactive” state. Possible mechanisms for the observed catalytically “inactive” Pt are discussed.</div>","PeriodicalId":100971,"journal":{"name":"Nuclear Instruments and Methods","volume":"182 ","pages":"Pages 991-999"},"PeriodicalIF":0.0,"publicationDate":"1981-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0029-554X(81)90833-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76494603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 18

Ion implantation in insulators 绝缘体中的离子注入

Nuclear Instruments and Methods Pub Date : 1981-04-15 DOI: 10.1016/0029-554X(81)90802-8

P. Townsend

引用次数: 16

Electrochemical and corrosion behaviour of nitrogen and boron implanted ARMCO iron 氮和硼注入ARMCO铁的电化学和腐蚀行为

Nuclear Instruments and Methods Pub Date : 1981-04-15 DOI: 10.1016/0029-554X(81)90834-X

P.L. Bonora , M. Bassoli , G. Cerisola , P.L. De Anna , S. Lo Russo , P. Mazzoldi , B. Tiveron , I. Scotoni , C. Tosello , A. Bernard

{"title":"Electrochemical and corrosion behaviour of nitrogen and boron implanted ARMCO iron","authors":"P.L. Bonora , M. Bassoli , G. Cerisola , P.L. De Anna , S. Lo Russo , P. Mazzoldi , B. Tiveron , I. Scotoni , C. Tosello , A. Bernard","doi":"10.1016/0029-554X(81)90834-X","DOIUrl":"10.1016/0029-554X(81)90834-X","url":null,"abstract":"<div>The electrochemical behaviour and pitting corrosion resistance of ARMCO iron specimens implanted with nitrogen or boron ions have been studied.The electrochemical measurements were performed in different solutions in order to characterize material behaviour under most usual work conditions. The following solutions were employed, (a) 0.5M H2SO4 deaerated solution, to study the active corrosion; (b) 0.15N H3BO3 + 0.15N Na2B4O7 · 10 H2O, pH 8.5, to study the passivating condition; (c) solution (b) + 2400 p.p.m. of Cl− to study the passivity breakdown; (d) 1M NaCl, pH 4, to study the pitting corrosion.The implantation affects the anodic dissolution of iron, lowering the intergranular attack and enhancing the protective capacity of the oxide layers, modifying the pit nucleation and growth.Scanning Electron Microscopy (SEM) was used in order to study the surface morphology.</div>","PeriodicalId":100971,"journal":{"name":"Nuclear Instruments and Methods","volume":"182 ","pages":"Pages 1001-1007"},"PeriodicalIF":0.0,"publicationDate":"1981-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0029-554X(81)90834-X","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76591981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Zinc implantation in gallium phosphide 磷化镓中锌的注入

Nuclear Instruments and Methods Pub Date : 1981-04-15 DOI: 10.1016/0029-554X(81)90791-6

Yasuhide Ohnuki , Taroh Inada

引用次数: 3

Hydrogen in amorphous silicon 非晶硅中的氢

Nuclear Instruments and Methods Pub Date : 1981-04-15 DOI: 10.1016/0029-554X(81)90708-4

P.S. Peercy

引用次数: 22