A graphical method to obtain the implantation regime required for heavily doped deep semiconductor junctions

Abstract

This paper describes a fast method to calculate the implantation parameters (φ, E) required in order to obtain a given concentration profile after annealing and driven-in diffusion (C_s, C_b, x_j) for thick junctions xx_j > 10h, where h = 2R_p). The method is usable for final Gaussian concentration profiles peaked at the SiO₂/Si interface or at the substrate surface and can be employed for bipolar transistors and buried layers in IC technology.