{"title":"获得重掺杂深半导体结所需注入状态的图解方法","authors":"B. Raicu","doi":"10.1016/0029-554X(81)90783-7","DOIUrl":null,"url":null,"abstract":"<div><p>This paper describes a fast method to calculate the implantation parameters (<em>φ</em>, <em>E</em>) required in order to obtain a given concentration profile after annealing and driven-in diffusion (<em>C</em><sub>s</sub>, <em>C</em><sub>b</sub>, <em>x</em><sub>j</sub>) for thick junctions <em>xx</em><sub>j</sub> > 10<em>h</em>, where <em>h</em> = 2<em>R</em><sub>p</sub>). The method is usable for final Gaussian concentration profiles peaked at the SiO<sub>2</sub>/Si interface or at the substrate surface and can be employed for bipolar transistors and buried layers in IC technology.</p></div>","PeriodicalId":100971,"journal":{"name":"Nuclear Instruments and Methods","volume":"182 ","pages":"Pages 601-602"},"PeriodicalIF":0.0000,"publicationDate":"1981-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0029-554X(81)90783-7","citationCount":"0","resultStr":"{\"title\":\"A graphical method to obtain the implantation regime required for heavily doped deep semiconductor junctions\",\"authors\":\"B. Raicu\",\"doi\":\"10.1016/0029-554X(81)90783-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This paper describes a fast method to calculate the implantation parameters (<em>φ</em>, <em>E</em>) required in order to obtain a given concentration profile after annealing and driven-in diffusion (<em>C</em><sub>s</sub>, <em>C</em><sub>b</sub>, <em>x</em><sub>j</sub>) for thick junctions <em>xx</em><sub>j</sub> > 10<em>h</em>, where <em>h</em> = 2<em>R</em><sub>p</sub>). The method is usable for final Gaussian concentration profiles peaked at the SiO<sub>2</sub>/Si interface or at the substrate surface and can be employed for bipolar transistors and buried layers in IC technology.</p></div>\",\"PeriodicalId\":100971,\"journal\":{\"name\":\"Nuclear Instruments and Methods\",\"volume\":\"182 \",\"pages\":\"Pages 601-602\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-04-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0029-554X(81)90783-7\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nuclear Instruments and Methods\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0029554X81907837\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nuclear Instruments and Methods","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0029554X81907837","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A graphical method to obtain the implantation regime required for heavily doped deep semiconductor junctions
This paper describes a fast method to calculate the implantation parameters (φ, E) required in order to obtain a given concentration profile after annealing and driven-in diffusion (Cs, Cb, xj) for thick junctions xxj > 10h, where h = 2Rp). The method is usable for final Gaussian concentration profiles peaked at the SiO2/Si interface or at the substrate surface and can be employed for bipolar transistors and buried layers in IC technology.
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