Pan Luo, Jiamao Li, Yaopeng Zhao, Jia Li, Chong Wang, Lei Yang, Haibing Wen, Huanqing Cui
{"title":"Gate Voltage Oscillation Model and Suppression Method for Enhancement‐Mode GaN Devices in Half‐Bridge Circuits","authors":"Pan Luo, Jiamao Li, Yaopeng Zhao, Jia Li, Chong Wang, Lei Yang, Haibing Wen, Huanqing Cui","doi":"10.1002/pssa.202300296","DOIUrl":"https://doi.org/10.1002/pssa.202300296","url":null,"abstract":"This article analyzes the issue of gate voltage oscillations in AlGaN/GaN high electron mobility transistors based on the half‐bridge circuit. With the influence of the parasitic parameters, the variation of high drain‐source voltage (Vds) can affect the gate‐source voltage (Vgs), thus resulting in serious gate voltage oscillations, which may cause over‐voltage, false turn‐on/off, and even gate breakdown. A large‐signal model is proposed to study this oscillations phenomenon. The oscillation model of Vgs is proposed as a step response of Vds. Based on the model, the influence of Vds and circuit parameters on Vgs are investigated, and guidelines to suppress the oscillation are given. Reducing the gate and power loop inductance in PCB wiring and increasing the gate resistance of inactive switch can significantly suppress the oscillation. Finally, the model is verified by both simulation results and experimental results.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"86 21 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84014962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Boubacar Tanda Bonkano, S. Palato, J. Krumland, Sergey Kovalenko, Philipp Schwendke, M. Guerrini, Qiuyang Li, Xiaoyang Zhu, C. Cocchi, J. Stähler
{"title":"Evidence for hybrid inorganic‐organic transitions at the WS2/terrylene interface","authors":"Boubacar Tanda Bonkano, S. Palato, J. Krumland, Sergey Kovalenko, Philipp Schwendke, M. Guerrini, Qiuyang Li, Xiaoyang Zhu, C. Cocchi, J. Stähler","doi":"10.1002/pssa.202300346","DOIUrl":"https://doi.org/10.1002/pssa.202300346","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"226 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75518538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Divagar Murugan, Marcel Tintelott, Hesam Amiri, Martin Kasavetov, D. Besedin, S. Ingebrandt, X. Vu, Vivek Pachuri
{"title":"Comparative study of surface activation steps for thermally grown oxide interface and optimal silanization","authors":"Divagar Murugan, Marcel Tintelott, Hesam Amiri, Martin Kasavetov, D. Besedin, S. Ingebrandt, X. Vu, Vivek Pachuri","doi":"10.1002/pssa.202300294","DOIUrl":"https://doi.org/10.1002/pssa.202300294","url":null,"abstract":"Silanization is one of the widely explored surface modification strategies for biofunctionalization of oxide interfaces. For biosensor applications, silanes with active terminal groups such as amine, thiol, carboxylic, and aldehyde groups are utilized in routine. In near‐field sensing schemes like biologically sensitive field‐effect transistors, it is crucial to generate a homogeneous layer of silane to confine the biointeractions in close vicinity of the sensor interface. The homogeneity of such biofunctional layer is determined by the surface activation and silanization protocol being applied. Herein, the impact of the surface activation process and silanization on electrical characteristics of field‐effect devices is studied comprehensively using an electrolyte‐oxide‐semiconductor (EOS) capacitor with a high‐quality gate oxide. The thermally grown silicon oxide (SiO2) interface is activated using acidic mixtures and plasma treatment, while the subsequent silanization steps are investigated comparatively using two different silanes (3‐aminopropyl triethoxysilane (APTES) and 3‐glycidyloxypropyl trimethoxysilane (GPTMS) in wet‐chemical and vapor‐phase processes. Furthermore, the optimized silanization process is utilized to immobilize an oligo strand at the EOS capacitor surface, followed by the hybridization of complementary oligo strands. The optimized protocol holds the potential for large‐scale production of functional oxide interfaces for various applications.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81257444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Taube, M. Borysiewicz, Oskar Sadowski, A. Wójcicka, Jarosław Tarenko, M. Wzorek
{"title":"All‐Oxide Transparent Vertical Indium Tin Oxide and Aluminum‐Doped Zinc Oxide/β‐Ga2O3 Schottky Diodes","authors":"A. Taube, M. Borysiewicz, Oskar Sadowski, A. Wójcicka, Jarosław Tarenko, M. Wzorek","doi":"10.1002/pssa.202300251","DOIUrl":"https://doi.org/10.1002/pssa.202300251","url":null,"abstract":"Herein, the fabrication and characterization of low‐resistance all‐oxide transparent vertical β‐Ga2O3 diodes using indium tin oxide (ITO) and aluminum‐doped zinc oxide (AZO) Schottky contacts are reported. It is shown that an ITO ohmic contact to n+‐β‐Ga2O3 substrate is formed after annealing in N2 at 800 °C. Both AZO‐ and ITO‐based Schottky diodes show well‐behaved current–voltage characteristics. Average Schottky barrier heights and ideality factors are 0.99 and 1.05 eV and 0.95 and 1.03 eV for AZO and ITO Schottky contacts, respectively. The on‐off current ratio is about 2 ×$times$ 1010 and 1 ×$times$ 1010 for AZO and ITO Schottky contact, respectively. Moreover, the on‐state resistance is about 6–7 and 4–5 mΩ cm2 for AZO and ITO Schottky contact, respectively, and is 20–35 times lower than for previously reported transparent β‐Ga2O3 Schottky diodes.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82071086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Taketo Kowaki, W. Matsumura, Koki Hanasaku, Ryo Okuno, Daisuke Inahara, S. Matsuda, S. Kurai, Yongzhao Yao, Y. Ishikawa, N. Okada, Y. Yamada
{"title":"Si‐Doping Effects in AlGaN Channel Layer on Performance of N‐Polar AlGaN/AlN FETs","authors":"Taketo Kowaki, W. Matsumura, Koki Hanasaku, Ryo Okuno, Daisuke Inahara, S. Matsuda, S. Kurai, Yongzhao Yao, Y. Ishikawa, N. Okada, Y. Yamada","doi":"10.1002/pssa.202200872","DOIUrl":"https://doi.org/10.1002/pssa.202200872","url":null,"abstract":"The nitrogen‐polar (N‐polar) AlGaN/AlN structure is expected to have higher carrier density than conventional metal‐polar AlGaN/GaN electronic devices, and the AlN substrate offers various advantages, such as high breakdown voltage and high‐temperature operation. Herein, a N‐polar AlGaN/AlN‐heterostructured field‐effect transistor (FET) with static FET characteristics is successfully fabricated. However, the drain current density, IDS, remains significantly small. This study aims to improve IDS by doping Si in the topmost AlGaN channel layer under various conditions.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"24 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90321191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Ozen, A. Karabiber, Sevinc Sener, O. İpek, F. Ozel
{"title":"Triboelectric Nanogenerator with Nanofiber Dielectric Layer Enriched through Novel Zinc Phthalocyanine Carrying Four O‐Carboranyl Units","authors":"A. Ozen, A. Karabiber, Sevinc Sener, O. İpek, F. Ozel","doi":"10.1002/pssa.202300191","DOIUrl":"https://doi.org/10.1002/pssa.202300191","url":null,"abstract":"Triboelectric nanogenerator (TENG) technology is one of the new, low‐cost, and simple methods used to convert mechanical energy into electrical energy. Despite having so many advantages, the energy efficiency of this technology is extremely low. Therefore, their current performance needs to be improved so that they can be used more in daily life. Nanofibers (NFs) are one of the most important material groups that can be used for this technology due to their large surface area–volume ratio, easy production, low cost, and simplicity. Herein, Nylon 6.6 and polyacrylonitrile are used as tribopositive and tribonegative dielectric layers, respectively. To increase the output performances of the TENG system, different weight ratios (1, 2, 3 wt%) of phthalocyanine containing zinc‐based carborane units (ZnPc) are added into the Nylon 6.6 NFs. In accordance with the obtained results, the maximum open circuit voltage and power are measured as 228 V and 7.76 mW, respectively. These results correspond for the TENG system with 1% by weight ZnPc doped into the NFs. These results show that high‐efficiency TENG systems can be obtained with nanofiber‐based dielectric layers and can be used effectively in self‐powered systems.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"25 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80618751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Neef, M. Rossi, M. Wolf, R. Ernstorfer, H. Seiler
{"title":"On the Role of Nuclear Motion in Singlet Exciton Fission: The Case of Single‐Crystal Pentacene","authors":"A. Neef, M. Rossi, M. Wolf, R. Ernstorfer, H. Seiler","doi":"10.1002/pssa.202300304","DOIUrl":"https://doi.org/10.1002/pssa.202300304","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75321744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. S. Mpofu, Musindo R. T. Madhovi, Tanaka Majuru, K. Munjeri, Timothy Gutu
{"title":"Utilizing Hydrazine and Hydrogen as Reducing Agents to Control the Nanoscale Surface Morphology of the Palladium Thin Films","authors":"B. S. Mpofu, Musindo R. T. Madhovi, Tanaka Majuru, K. Munjeri, Timothy Gutu","doi":"10.1002/pssa.202200645","DOIUrl":"https://doi.org/10.1002/pssa.202200645","url":null,"abstract":"A key challenge facing fabrication of nanomaterials is the ability to precisely control the surface morphology of the nanostructures through exploitation of process parameters. In this study, palladium thin films with carefully controlled surface morphologies are obtained through the careful choice of the reducing agent used during the pre‐plating activation step in the three‐step autocatalytic electroless plating consisting of 1) surface functionalization; 2) surface activation; and 3) deposition of the film onto alumina substrates. It is important to note that the reducing agents that influenced the surface morphology of the palladium thin films are employed in the pre‐plating activation step instead of the widely utilized electroless deposition step. It is revealed in the high‐resolution scanning electron microscope results that the hydrogen reducing agent yields a dense film with 3D spheroidal morphologies with an average cluster size of ≈415 nm while the hydrazine reducing agent produces a very smooth uniform surface morphology consisting of extremely small grains. The obtained results can be exploited in controlling and tailoring the surface‐dependent properties of the palladium thin film for applications in gas sensors, detectors, or palladium‐based membranes.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"180 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86811652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Annu Yadav, P. Lohia, Sachin Singh, S. Yadav, A. Mishra, D. K. Dwivedi
{"title":"Numerical Study of Silicon and Tungsten Diselenide Nanomaterial‐Based Surface Plasmon Resonance Sensor for Refractive Index Sensing","authors":"Annu Yadav, P. Lohia, Sachin Singh, S. Yadav, A. Mishra, D. K. Dwivedi","doi":"10.1002/pssa.202300340","DOIUrl":"https://doi.org/10.1002/pssa.202300340","url":null,"abstract":"A Kretschmann configuration‐based surface plasmon resonance sensor is proposed. The sensor is made up of calcium fluoride prism, silver, silicon, and tungsten di selenide nanolayer. The theoretical and numerical study of surface plasmon resonance sensor is analyzed by angle interrogation method with the help of MATLAB 2017b. The transfer matrix method (TMM) is the foundation for simulation and a monochromatic light of wavelength 633 nm is considered as source. In the proposed device structure, each layer is arranged in vertical format to improve the electrical and optical properties. The refractive index for analyte is considered as 1.330 to 1.335. Silver (Ag) metal is used for the generation of surface plasmons. It has good chemical properties like metallic conductivity, chemical stability, bandgap, small work function, and acts as an adhesive layer between calcium fluoride prism and silicon layer. To improve the molecular contact and absorption, the transition metal dichalcogenide nanofilm tungsten di selenide (WSe2) is applied at the top. The sensitivity of 367.4 deg RIU−1, detection accuracy of 0.4169 deg−1, quality factor of 193.58, and full‐width half maximum of 1.8985 deg are obtained optimized performance parameters of the proposed device structure.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80886058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}