Physica status solidi (A): Applied research最新文献_第7页

Antimicrobial Agent Based on Ca‐Doped ZnO Nanopowders 基于Ca掺杂ZnO纳米粉体的抗菌剂

Physica status solidi (A): Applied research Pub Date : 2023-07-08 DOI: 10.1002/pssa.202300162

Ahmad M. Saeedi, Norah H. Alonizan, Ahmad A. Alsaigh, L. Alaya, L. El Mir, Mahmoud Zaki El-Readi, M. Hjiri

{"title":"Antimicrobial Agent Based on Ca‐Doped ZnO Nanopowders","authors":"Ahmad M. Saeedi, Norah H. Alonizan, Ahmad A. Alsaigh, L. Alaya, L. El Mir, Mahmoud Zaki El-Readi, M. Hjiri","doi":"10.1002/pssa.202300162","DOIUrl":"https://doi.org/10.1002/pssa.202300162","url":null,"abstract":"Herein, sol–gel are used to synthesize pure and calcium‐doped ZnO (CZO). X‐ray diffraction shows that all samples have hexagonal wurtzite structure with a slight distortion of ZnO lattice and no extra secondary phases. The crystallite size increases after the addition of calcium from 31 to 34 nm. Photoluminescence shows the vanishment of the green emission band existed in the pure sample; in addition to the appearance of new peaks at 408, 448, 465, and 596 nm attributed to zinc interstitials (Zni), zinc vacancy (VZn), oxygen vacancy defect (Vo), and oxygen interstitial (Oi), respectively. The increase of crystallites size influences the efficacity of CZO sample against microbes. The different mechanisms to enhance the antibacterial activities are the release of Zn2+, reactive oxygen species production, and electrostatic interactions. Increasing the amount of CZO powder in dimethyl sulfoxide from 50 to 100 μg mL−1 leads to an increase of antibacterial activity of samples; and this is probably due to enhancement of number of interaction sites. Promising results are illustrated, which proves the potentiality of doping with Ca. The growth curves through optical density (OD600 nm) measurements of strains in CZO nanoparticles using serial fold dilution method indicated that strains viability decreases with increasing nanoparticles concentrations.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72601002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Mechanical Properties of Cold‐Welded CoCrFeCuNi Nanowires with Side‐by‐Side Contact: A Molecular Dynamics Study 具有相邻接触的CoCrFeCuNi纳米线的力学性能:分子动力学研究

Physica status solidi (A): Applied research Pub Date : 2023-07-06 DOI: 10.1002/pssa.202300326

Jianfei Xu, Xiuming Liu, Yuhang Zhang, Yiqun Hu, R. Xia

{"title":"Mechanical Properties of Cold‐Welded CoCrFeCuNi Nanowires with Side‐by‐Side Contact: A Molecular Dynamics Study","authors":"Jianfei Xu, Xiuming Liu, Yuhang Zhang, Yiqun Hu, R. Xia","doi":"10.1002/pssa.202300326","DOIUrl":"https://doi.org/10.1002/pssa.202300326","url":null,"abstract":"Cold welding at the nanoscale is a promising technique for bottom‐up fabrication and assembly of nanostructured materials. Herein, the cold welding process of the CoCrFeCuNi high‐entropy‐alloy (HEA) nanowires in the form of side‐by‐side contact using molecular dynamics simulation is inestigated. The effects of overlap length, crystal orientation, and temperature are taken into consideration. The results demonstrate that strength is positively correlated with the overlap length. Fracture strain first increases up to a maximum and then decreases with the increase in overlap length. When the temperature increases from 300 to 900 K, the ultimate stress of the welded nanowires decreases from 1.18 to 0.87 GPa, and the welding stress decreases from −0.54 to −0.26 GPa. The crystal orientation significantly influences the deformation mechanism. For samples welded by nanowires with the same crystal orientation, the primary deformation mechanisms are twinning and dislocation slip. However, for samples welded by nanowires with different crystal orientations, the deformation is primarily mediated by the grain boundary slip. The research can enhance the understanding of the cold welding behavior for low‐dimensional materials and is hopeful to provide some valuable guidance for the bottom‐up fabrication and assembly of HEA nanocomponents.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77780168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Al Doping Influence on the Properties of Sol–Gel Synthetized ZnO Nanoparticles Al掺杂对溶胶-凝胶法制备ZnO纳米颗粒性能的影响

Physica status solidi (A): Applied research Pub Date : 2023-07-06 DOI: 10.1002/pssa.202300272

Samar Al-Shehri, Salma Alshehri, Haithem Elhosni Ali, Jamaan E. Alassafi, A. O. Alzahrani, M. S. Aida

引用次数: 0

Effect of Source–Drain Opposite Side Gate on the AlGaN/GaN High Electron Mobility Transistor Devices 源漏对侧栅极对AlGaN/GaN高电子迁移率晶体管器件的影响

Physica status solidi (A): Applied research Pub Date : 2023-07-06 DOI: 10.1002/pssa.202300375

Shengting Luo, Xianyun Liu, Xingfang Jiang

{"title":"Effect of Source–Drain Opposite Side Gate on the AlGaN/GaN High Electron Mobility Transistor Devices","authors":"Shengting Luo, Xianyun Liu, Xingfang Jiang","doi":"10.1002/pssa.202300375","DOIUrl":"https://doi.org/10.1002/pssa.202300375","url":null,"abstract":"To explore the influence of different gate positions on the performance of AlGaN/GaN high electron mobility transistor devices, two model structures are proposed in this paper: an inverted T‐type gate and source–drain opposite side structure (ITGS–DOSS), and an embedded ITGS–DOSS. It is shown in the simulation results that compared with the traditional T‐type gate structure, these two structures have better transfer characteristics and significantly reduce the on‐state resistance, which can effectively improve the virtual gate effect and suppress the current collapse effect. Furthermore, these two structures can also improve the frequency characteristics of the device, with a maximum cutoff frequency of about 625 and 635 GHz, respectively. The threshold voltage of the ITGS–DOSS is about −30 V, which is significantly shifted to the left compared to the traditional T‐type structure. With a gate–drain spacing of 4.4 μm, the breakdown voltage is still as high as 1661 V. As the device size and gate–drain spacing decrease, this structure has better voltage withstand characteristics, thus achieving low threshold and high breakdown device performance.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84881412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Emission Mechanism of Light‐Emitting Diode Structures with Red, Green, and Blue Active Layers Separated by Si‐Doped Interlayers 掺硅间层分离红、绿、蓝有源层的发光二极管结构的发射机理

Physica status solidi (A): Applied research Pub Date : 2023-07-06 DOI: 10.1002/pssa.202300181

K. Okuno, K. Goshonoo, M. Ohya

{"title":"Emission Mechanism of Light‐Emitting Diode Structures with Red, Green, and Blue Active Layers Separated by Si‐Doped Interlayers","authors":"K. Okuno, K. Goshonoo, M. Ohya","doi":"10.1002/pssa.202300181","DOIUrl":"https://doi.org/10.1002/pssa.202300181","url":null,"abstract":"Blue, green, and red micro‐light‐emitting diodes (LEDs) are expected to serve as light sources for next‐generation full‐color displays. This study fabricates an InGaN LED with an active layer comprising stacked red, green, and blue active layers separated by interlayers using the metal‐organic vapor‐phase epitaxy method for application to a monolithic full‐color LED. Experimental results and band simulations reveal that the emission wavelength during the current injection is controllable via adjustments to the Si doping amount of the interlayer. For a Si doping amount of the interlayer of approximately 2 × 1018 cm−3, only the red active layer closest to the p‐side emits light with a wavelength of ≈610 nm. With a decrease in the Si doping amount in the interlayer, the emission intensity from the n‐side active layer, that is, the green and blue active layers, increases. Moreover, the Si‐doped interlayer acts as a barrier against holes diffusing from the p‐side to the n‐side, thus controlling the amount of carrier injected into each active layer. Additionally, the green and blue active layers under the red active layer improve the emission characteristics of the red active layer. These results indicate the importance of this technology for realizing monolithic, full‐color InGaN‐based LEDs.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82239808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Preparation and Structural Characterization of Thin Films of CuInS2 by Sintering Colloidally Synthesized Nanoparticles at Moderate Temperature 中温烧结胶体纳米颗粒制备CuInS2薄膜及结构表征

Physica status solidi (A): Applied research Pub Date : 2023-07-05 DOI: 10.1002/pssa.202200855

H. Reinhold, Ulf Mikolajczak, H. Borchert, Jürgen Parisi, Dorothea Scheunemann

引用次数: 0

Comparative Performance Evaluation for 1.2–10kV Conventional and Superjunction GaN Current Aperture Vertical Electron Transistors 1.2-10kV常规和超结氮化镓电流孔径垂直电子晶体管的性能比较

Physica status solidi (A): Applied research Pub Date : 2023-07-04 DOI: 10.1002/pssa.202300305

M. Torky, Yanzhen Zhao, Panagiotis Lazos, T. Chow

{"title":"Comparative Performance Evaluation for 1.2–10kV Conventional and Superjunction GaN Current Aperture Vertical Electron Transistors","authors":"M. Torky, Yanzhen Zhao, Panagiotis Lazos, T. Chow","doi":"10.1002/pssa.202300305","DOIUrl":"https://doi.org/10.1002/pssa.202300305","url":null,"abstract":"The performance potentials and limits for GaN current aperture vertical electron transistors with conventional, doped, and natural polarization superjunction (PSJ) drift layers at 1.2–10 kV breakdown voltage (BV) ratings are quantitatively compared. The static and dynamic performance parameters for each device are simulated and extracted. The specific on‐resistance RON,sp and specific total charge QT,sp (defined as the sum of specific gate charge QG,sp and specific drain–source charge QDS,sp) are extracted from Medici technology computer‐aided design simulations representing both the static and dynamic performance respectively. Moreover, a developed figure‐of‐merit (FoM) (RON,sp · QT,sp) is used to quantitively compare the performance of these field‐effect transistors in the range of BV ratings. Compared to the doped superjunction (DSJ) and conventional CAVETs, natural PSJ CAVET exhibits 1%–60% and 70%–99% reduction in RON,sp, while it is 100 to 1000× reduction in QT,sp, at BV between 1.2 and 10 kV respectively. Simultaneously, 22%–80% and 80%–99% reduction in performance FoM respectively are found.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86670692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multiplexing system for automated characterization of a capacitive field‐effect sensor array 用于自动表征电容场效应传感器阵列的多路复用系统

Physica status solidi (A): Applied research Pub Date : 2023-07-04 DOI: 10.1002/pssa.202300265

Tobias L. Karschuck, Stefan-Wolfgang Schmidt, Stefan Achtsnicht, A. Poghossian, Patrick H. Wagner, M. Schöning

引用次数: 0

Enhanced photocatalytic degradation of antibiotics by Ag/BiOI/g‐C3N4 composites Ag/BiOI/g‐C3N4复合材料增强抗生素光催化降解

Physica status solidi (A): Applied research Pub Date : 2023-07-04 DOI: 10.1002/pssa.202300261

Ting Li, M. Ma, Junhai Wang, Qiang Li, Yunwu Yu, Qianqian Zou, Xinran Li, Xiaoyi Wei, Tingting Yan, Yulan Tang

{"title":"Enhanced photocatalytic degradation of antibiotics by Ag/BiOI/g‐C3N4 composites","authors":"Ting Li, M. Ma, Junhai Wang, Qiang Li, Yunwu Yu, Qianqian Zou, Xinran Li, Xiaoyi Wei, Tingting Yan, Yulan Tang","doi":"10.1002/pssa.202300261","DOIUrl":"https://doi.org/10.1002/pssa.202300261","url":null,"abstract":"As an efficient, safe, and environmentally friendly technology, semiconductor photocatalysis has been widely used in the removal of antibiotics from wastewater. In this work, a novel Ag/BiOI/g‐C3N4 composite photocatalytic material, BiOI/g‐C3N4, g‐C3N4, and BiOI are prepared as the photocatalysts. The morphologies, chemical properties, and photocatalytic performances of the photocatalysts are characterized using scanning electron microscope, transmission electron microscope, X‐ray diffraction, X‐ray photoelectron spectroscopy, Fourier‐transform infrared spectrometer, ultraviolet–visible spectroscopy (UV–Vis) diffuse reflectance spectra, and photoluminescence spectra. In addition, tetracycline hydrochloride (TC) and ceftiofur sodium aqueous solutions are used to simulate wastewater and the photocatalytic degradation performances of the photocatalysts are investigated and compared under visible light. Compared to g‐C3N4, BiOI, and BiOI/g‐C3N4, the Ag/BiOI/g‐C3N4 demonstrates superior performance, increasing the removal rates of TC and ceftiofur sodium to 85.6% and 90.2%, respectively. The photocatalytic mechanism of the Ag/BiOI/g‐C3N4 may involve the promotion of the visible light–harvesting ability and inhibition of the recombination of photogenerated electron/hole pairs. Furthermore, the primary active groups in the system are identified as superoxide radicals (·O2−) and hydroxyl radicals (·OH). Herein, some valuable insights into the development of innovative photocatalytic materials are offered for the effective removal of antibiotics from water.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80358341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect Mechanism of Sc Addition and T6 Heat Treatment on Precipitated Phase and Mechanical Properties of Al‐Cu‐Mn Alloy Sc添加和T6热处理对Al - Cu - Mn合金析出相及力学性能的影响机理

Physica status solidi (A): Applied research Pub Date : 2023-07-04 DOI: 10.1002/pssa.202300190

Pan Tang, Kailai Yu, Luman Qin, Saisha Huang

{"title":"Effect Mechanism of Sc Addition and T6 Heat Treatment on Precipitated Phase and Mechanical Properties of Al‐Cu‐Mn Alloy","authors":"Pan Tang, Kailai Yu, Luman Qin, Saisha Huang","doi":"10.1002/pssa.202300190","DOIUrl":"https://doi.org/10.1002/pssa.202300190","url":null,"abstract":"The microstructure and mechanical properties of cast Al‐Cu‐Mn alloy influenced by various Sc additions (viz. 0.1, 0.2, 0.3, 0.4, and 0.5 wt%) are investigated. It is found that the grain size of α‐Al and the area proportion of the second phase are decreased with the addition of Sc. In addition, the morphology of the precipitated phase in Al‐Cu‐Mn alloy also evolves at different stages, and the solidification temperature range and initial enthalpy change of the alloy are changed, resulting in the formation of a variety of second‐phase containing Sc. Owing to the grain refinement and precipitation strengthening effects, the hardness of as‐cast alloys is better than T6 alloys. Moreover, it is observed that when the Sc content is 0.3%, the mechanical properties of the as‐cast Al‐Cu‐Mn alloy are the minimum, and the Al‐Cu‐Mn alloys after T6 heat treatment are the maximum. These results confirm that the mechanical properties improvement effect of the as‐cast Al‐Cu‐Mn alloy is greater than that of the T6 heat treatment Al‐Cu‐Mn alloy with the addition of Sc. Meanwhile, the Orowan strengthening mechanism is found to have lost its dominant position.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"91 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79422861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0