Physica status solidi (A): Applied research最新文献_第7页

Extremely High Ferromagnetic Resonance Frequency Induced by Triclinic Lattice Distortion in Epitaxial FeCo/MgAl2O4 (001) Films 外延FeCo/MgAl2O4(001)薄膜中三斜晶格畸变诱导的极高铁磁共振频率

Physica status solidi (A): Applied research Pub Date : 2023-07-11 DOI: 10.1002/pssa.202300438

Congying Ding, Le Wang, Rabiul Islam, Shouheng Zhang, Xia Wang, Hongli Li, W. He, Xing-hua Zhu, Zhao Yao, Zhejun Jin, Guoxia Zhao, Yong Peng, G. Miao, Shandong Li

{"title":"Extremely High Ferromagnetic Resonance Frequency Induced by Triclinic Lattice Distortion in Epitaxial FeCo/MgAl2O4 (001) Films","authors":"Congying Ding, Le Wang, Rabiul Islam, Shouheng Zhang, Xia Wang, Hongli Li, W. He, Xing-hua Zhu, Zhao Yao, Zhejun Jin, Guoxia Zhao, Yong Peng, G. Miao, Shandong Li","doi":"10.1002/pssa.202300438","DOIUrl":"https://doi.org/10.1002/pssa.202300438","url":null,"abstract":"Theoretically, tetragonal lattice distortion of FeCo epitaxial films can result in a very large in‐plane magnetic anisotropy field, leading to an extremely high ferromagnetic resonance (FMR) frequency. Herein, Fe 75 Co 25 $left(text{Fe}right)_{75} left(text{Co}right)_{25}$ thin films are epitaxially grown on (001) MgAl2O4 single‐crystal substrates. A triclinic lattice distortion with a ≠ b ≠ c $a neq b neq c$ , instead of a tetragonal one, is found in the FeCo films. The cubic symmetry breaking leads to a deviation of easy axes from the 100 $100$ directions, forming a distribution of magnetic moments with a strong perpendicular magnetic anisotropy (PMA) along the out‐of‐plane [001] directions and a deviation of the in‐plane components from the ([10 100]) directions. The effective field of the former is as high as 1.5–2.5 T, enough to overcome the thin film shape anisotropy, while that of the latter stays at a low value of around 0.05 T. The strain‐induced PMA gradually relaxes to in‐plane for thicker films with a strained sublayer remaining. As a result, an extremely high out‐of‐plane FMR frequency over 40 GHz is achieved, accompanied by a lower in‐plane FMR frequency around 8 GHz. This study provides a possible approach to prepare self‐biased soft magnetic films with extremely high‐resonance frequency for applications in microwave‐integrated circuits.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78119661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simple Thermal Annealing‐Assisted Direct Synthesis and Optical Property Study of CuO Nanoparticles Incorporated Polyvinyl Alcohol Films 简单热退火辅助直接合成CuO纳米颗粒聚乙烯醇膜及其光学性能研究

Physica status solidi (A): Applied research Pub Date : 2023-07-09 DOI: 10.1002/pssa.202300328

Ram Sevak Singh, R. D. Patidar, Ashutosh Kumar Singh, Kalim Deshmukh, K. Thakur, A. Gautam

{"title":"Simple Thermal Annealing‐Assisted Direct Synthesis and Optical Property Study of CuO Nanoparticles Incorporated Polyvinyl Alcohol Films","authors":"Ram Sevak Singh, R. D. Patidar, Ashutosh Kumar Singh, Kalim Deshmukh, K. Thakur, A. Gautam","doi":"10.1002/pssa.202300328","DOIUrl":"https://doi.org/10.1002/pssa.202300328","url":null,"abstract":"This article reports a simple thermal annealing‐assisted direct synthesis method to prepare copper oxide (CuO) nanoparticles incorporated in polyvinyl alcohol (PVA) films and a systematic study of their optical properties. CuO‐PVA nanocomposite films are prepared with a different weight percentage of CuO in the PVA matrix. Scanning electron microscopy (SEM), X‐ray diffraction (XRD), UV‐visible spectroscopy, and photoluminescence spectroscopy are employed to study the prepared films. XRD confirms the formation of crystalline CuO nanoparticles in PVA, while the SEM analysis shows uniformly distributed spherical nanoparticles in PVA. The findings show that thermal annealing at a mild temperature plays a crucial role in improving the crystallinity and optical properties of the nanocomposite film. In comparison to PVA, CuO‐PVA nanocomposite exhibits improved absorption with a new absorption band in the lower wavelength region. The nanocomposite samples excited with 300 nm show intense photoluminescence (PL) at 365 nm and an increase of PL intensity with CuO concentration in the PVA matrix. In contrast, samples excited with 425 nm show green emission at 550 nm in the visible region of the electromagnetic spectrum. The PL in CuO‐PVA nanocomposites can be originated due to the transitions associated with acceptor and donor defects in the material. The study opens up a new route to fabricate CuO‐PVA nanocomposites with superior optical properties.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73433820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Smart phone based Non‐Invasive Glucose Monitoring in Diabetic patients utilizing Enhanced Chemiluminescence Imaging Technique. 利用增强型化学发光成像技术，基于智能手机的糖尿病患者无创血糖监测。

Physica status solidi (A): Applied research Pub Date : 2023-07-08 DOI: 10.1002/pssa.202300077

Priya Singh, Nupur Kumari, Ravi Prakash Ojha, Narsingh Raw Nirala, R. Prakash

引用次数: 0

Transparent Conducting Oxide Nanocrystals: Synthesis, Challenges, and Future Prospects for Optoelectronic Devices 透明导电氧化物纳米晶体:光电子器件的合成、挑战和未来展望

Physica status solidi (A): Applied research Pub Date : 2023-07-08 DOI: 10.1002/pssa.202300351

Averi Guha, Tapas K. Paira, Sanjit Sarkar

引用次数: 0

Fabrication and Damping Property of Porous Cu–Al–Ni Shape Memory Alloys Fabricated using Different Raw Materials 不同原料制备多孔Cu-Al-Ni形状记忆合金的制备及其阻尼性能

Physica status solidi (A): Applied research Pub Date : 2023-07-08 DOI: 10.1002/pssa.202300229

Huan-Yeuh Chu, G. Hao, Puguang Ji, Jianjun Zhang, Tianyuan Zheng, Qingzhou Wang

引用次数: 0

Antimicrobial Agent Based on Ca‐Doped ZnO Nanopowders 基于Ca掺杂ZnO纳米粉体的抗菌剂

Physica status solidi (A): Applied research Pub Date : 2023-07-08 DOI: 10.1002/pssa.202300162

Ahmad M. Saeedi, Norah H. Alonizan, Ahmad A. Alsaigh, L. Alaya, L. El Mir, Mahmoud Zaki El-Readi, M. Hjiri

{"title":"Antimicrobial Agent Based on Ca‐Doped ZnO Nanopowders","authors":"Ahmad M. Saeedi, Norah H. Alonizan, Ahmad A. Alsaigh, L. Alaya, L. El Mir, Mahmoud Zaki El-Readi, M. Hjiri","doi":"10.1002/pssa.202300162","DOIUrl":"https://doi.org/10.1002/pssa.202300162","url":null,"abstract":"Herein, sol–gel are used to synthesize pure and calcium‐doped ZnO (CZO). X‐ray diffraction shows that all samples have hexagonal wurtzite structure with a slight distortion of ZnO lattice and no extra secondary phases. The crystallite size increases after the addition of calcium from 31 to 34 nm. Photoluminescence shows the vanishment of the green emission band existed in the pure sample; in addition to the appearance of new peaks at 408, 448, 465, and 596 nm attributed to zinc interstitials (Zni), zinc vacancy (VZn), oxygen vacancy defect (Vo), and oxygen interstitial (Oi), respectively. The increase of crystallites size influences the efficacity of CZO sample against microbes. The different mechanisms to enhance the antibacterial activities are the release of Zn2+, reactive oxygen species production, and electrostatic interactions. Increasing the amount of CZO powder in dimethyl sulfoxide from 50 to 100 μg mL−1 leads to an increase of antibacterial activity of samples; and this is probably due to enhancement of number of interaction sites. Promising results are illustrated, which proves the potentiality of doping with Ca. The growth curves through optical density (OD600 nm) measurements of strains in CZO nanoparticles using serial fold dilution method indicated that strains viability decreases with increasing nanoparticles concentrations.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72601002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Mechanical Properties of Cold‐Welded CoCrFeCuNi Nanowires with Side‐by‐Side Contact: A Molecular Dynamics Study 具有相邻接触的CoCrFeCuNi纳米线的力学性能:分子动力学研究

Physica status solidi (A): Applied research Pub Date : 2023-07-06 DOI: 10.1002/pssa.202300326

Jianfei Xu, Xiuming Liu, Yuhang Zhang, Yiqun Hu, R. Xia

{"title":"Mechanical Properties of Cold‐Welded CoCrFeCuNi Nanowires with Side‐by‐Side Contact: A Molecular Dynamics Study","authors":"Jianfei Xu, Xiuming Liu, Yuhang Zhang, Yiqun Hu, R. Xia","doi":"10.1002/pssa.202300326","DOIUrl":"https://doi.org/10.1002/pssa.202300326","url":null,"abstract":"Cold welding at the nanoscale is a promising technique for bottom‐up fabrication and assembly of nanostructured materials. Herein, the cold welding process of the CoCrFeCuNi high‐entropy‐alloy (HEA) nanowires in the form of side‐by‐side contact using molecular dynamics simulation is inestigated. The effects of overlap length, crystal orientation, and temperature are taken into consideration. The results demonstrate that strength is positively correlated with the overlap length. Fracture strain first increases up to a maximum and then decreases with the increase in overlap length. When the temperature increases from 300 to 900 K, the ultimate stress of the welded nanowires decreases from 1.18 to 0.87 GPa, and the welding stress decreases from −0.54 to −0.26 GPa. The crystal orientation significantly influences the deformation mechanism. For samples welded by nanowires with the same crystal orientation, the primary deformation mechanisms are twinning and dislocation slip. However, for samples welded by nanowires with different crystal orientations, the deformation is primarily mediated by the grain boundary slip. The research can enhance the understanding of the cold welding behavior for low‐dimensional materials and is hopeful to provide some valuable guidance for the bottom‐up fabrication and assembly of HEA nanocomponents.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77780168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Al Doping Influence on the Properties of Sol–Gel Synthetized ZnO Nanoparticles Al掺杂对溶胶-凝胶法制备ZnO纳米颗粒性能的影响

Physica status solidi (A): Applied research Pub Date : 2023-07-06 DOI: 10.1002/pssa.202300272

Samar Al-Shehri, Salma Alshehri, Haithem Elhosni Ali, Jamaan E. Alassafi, A. O. Alzahrani, M. S. Aida

引用次数: 0

Effect of Source–Drain Opposite Side Gate on the AlGaN/GaN High Electron Mobility Transistor Devices 源漏对侧栅极对AlGaN/GaN高电子迁移率晶体管器件的影响

Physica status solidi (A): Applied research Pub Date : 2023-07-06 DOI: 10.1002/pssa.202300375

Shengting Luo, Xianyun Liu, Xingfang Jiang

{"title":"Effect of Source–Drain Opposite Side Gate on the AlGaN/GaN High Electron Mobility Transistor Devices","authors":"Shengting Luo, Xianyun Liu, Xingfang Jiang","doi":"10.1002/pssa.202300375","DOIUrl":"https://doi.org/10.1002/pssa.202300375","url":null,"abstract":"To explore the influence of different gate positions on the performance of AlGaN/GaN high electron mobility transistor devices, two model structures are proposed in this paper: an inverted T‐type gate and source–drain opposite side structure (ITGS–DOSS), and an embedded ITGS–DOSS. It is shown in the simulation results that compared with the traditional T‐type gate structure, these two structures have better transfer characteristics and significantly reduce the on‐state resistance, which can effectively improve the virtual gate effect and suppress the current collapse effect. Furthermore, these two structures can also improve the frequency characteristics of the device, with a maximum cutoff frequency of about 625 and 635 GHz, respectively. The threshold voltage of the ITGS–DOSS is about −30 V, which is significantly shifted to the left compared to the traditional T‐type structure. With a gate–drain spacing of 4.4 μm, the breakdown voltage is still as high as 1661 V. As the device size and gate–drain spacing decrease, this structure has better voltage withstand characteristics, thus achieving low threshold and high breakdown device performance.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84881412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Emission Mechanism of Light‐Emitting Diode Structures with Red, Green, and Blue Active Layers Separated by Si‐Doped Interlayers 掺硅间层分离红、绿、蓝有源层的发光二极管结构的发射机理

Physica status solidi (A): Applied research Pub Date : 2023-07-06 DOI: 10.1002/pssa.202300181

K. Okuno, K. Goshonoo, M. Ohya

{"title":"Emission Mechanism of Light‐Emitting Diode Structures with Red, Green, and Blue Active Layers Separated by Si‐Doped Interlayers","authors":"K. Okuno, K. Goshonoo, M. Ohya","doi":"10.1002/pssa.202300181","DOIUrl":"https://doi.org/10.1002/pssa.202300181","url":null,"abstract":"Blue, green, and red micro‐light‐emitting diodes (LEDs) are expected to serve as light sources for next‐generation full‐color displays. This study fabricates an InGaN LED with an active layer comprising stacked red, green, and blue active layers separated by interlayers using the metal‐organic vapor‐phase epitaxy method for application to a monolithic full‐color LED. Experimental results and band simulations reveal that the emission wavelength during the current injection is controllable via adjustments to the Si doping amount of the interlayer. For a Si doping amount of the interlayer of approximately 2 × 1018 cm−3, only the red active layer closest to the p‐side emits light with a wavelength of ≈610 nm. With a decrease in the Si doping amount in the interlayer, the emission intensity from the n‐side active layer, that is, the green and blue active layers, increases. Moreover, the Si‐doped interlayer acts as a barrier against holes diffusing from the p‐side to the n‐side, thus controlling the amount of carrier injected into each active layer. Additionally, the green and blue active layers under the red active layer improve the emission characteristics of the red active layer. These results indicate the importance of this technology for realizing monolithic, full‐color InGaN‐based LEDs.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82239808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0