Physica status solidi (A): Applied research最新文献_第10页

Structural Interpretation of Sintering Temperature Effect on Optical and Electrical Properties of Pr3+‐Substituted Nickel Ferrites 烧结温度对Pr3+取代镍铁氧体光学和电学性能影响的结构解释

Physica status solidi (A): Applied research Pub Date : 2023-06-26 DOI: 10.1002/pssa.202300263

Chaitali Mondal, A. Dutta, A. Sinha

{"title":"Structural Interpretation of Sintering Temperature Effect on Optical and Electrical Properties of Pr3+‐Substituted Nickel Ferrites","authors":"Chaitali Mondal, A. Dutta, A. Sinha","doi":"10.1002/pssa.202300263","DOIUrl":"https://doi.org/10.1002/pssa.202300263","url":null,"abstract":"Herein, the sintering temperature effect on various properties of Pr3+‐substituted nickel ferrites prepared through the sol–gel–citrate autocombustion method is presented. The Rietveld refinement of X‐ray diffraction patterns confirms the formation of the inverse spinel nickel ferrite phase with an additional orthorhombic phase PrFeO3. The crystallinity of those samples is better with a lesser weight percentage of the secondary phase for higher sintered samples. Structural parameters like crystallite size, lattice parameter, microstrain, and bond lengths depend strongly on sintering temperature with an increasing trend. Scanning electron micrographs clearly show the grain growth of the samples with sintering temperature with the formation of a secondary phase at the grain boundaries. The photoluminescence study points to the photocatalytic nature of the compositions. The bandgaps of the samples are calculated using a UV–vis study, which shows an initial decrease in values with increasing sintering temperature. The electrical study confirms the grain and grain boundary contribution to the total conductivity. With higher sintering temperatures, activation energies decrease, but the dielectric loss and saturation dielectric constant tend to increase. The scaling of conductivity and dielectric loss spectra confirm the time–temperature superposition principle.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80861200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Probing crystallinity and grain structure of 2D materials and 2D‐like van der Waals heterostructures by low‐voltage electron diffraction 用低压电子衍射探测二维材料和类二维范德华异质结构的结晶度和晶粒结构

Physica status solidi (A): Applied research Pub Date : 2023-06-26 DOI: 10.1002/pssa.202300148

Johannes Müller, Max Heyl, T. Schultz, Kristiane Elsner, M. Schloz, Steffen Rühl, H. Seiler, Norbert Koch, E. List‐Kratochvil, C. Koch

引用次数: 0

Energy Storage Performance of PZT/PZ Composite Films Obtained by Sol–Gel Method 溶胶-凝胶法制备PZT/PZ复合薄膜的储能性能

Physica status solidi (A): Applied research Pub Date : 2023-06-24 DOI: 10.1002/pssa.202300233

F. Yang, Z. Yuan, S. J. Wu, J. Y. Chen, M. Hou, A. D. Liu, K. Yu, Y. H. Zhang, Xia Li, Y. Hu, J. Shang, S. Yin, X. W. Wang

引用次数: 0

Hole injection characteristics and annealing temperature dependence for organic light‐emitting diodes using spontaneous polarization 自发极化有机发光二极管的空穴注入特性和退火温度依赖性

Physica status solidi (A): Applied research Pub Date : 2023-06-24 DOI: 10.1002/pssa.202300161

Ryosuke Fukazawa, Yoshiki Maegawa, M. Morimoto, R. Matsubara, A. Kubono, S. Naka

引用次数: 0

Application of Carbon Nanosphere Templates for Preparation of Inverse Opal Photonic Crystals in Dye‐Sensitized Solar Cells 碳纳米球模板制备反蛋白石光子晶体在染料敏化太阳能电池中的应用

Physica status solidi (A): Applied research Pub Date : 2023-06-24 DOI: 10.1002/pssa.202300221

Haihong Niu, Junqiao Shao, Yuxin Xie, Taibao Ye, Tianwen Li, Suikang Luo, Xiaoyu Yao

{"title":"Application of Carbon Nanosphere Templates for Preparation of Inverse Opal Photonic Crystals in Dye‐Sensitized Solar Cells","authors":"Haihong Niu, Junqiao Shao, Yuxin Xie, Taibao Ye, Tianwen Li, Suikang Luo, Xiaoyu Yao","doi":"10.1002/pssa.202300221","DOIUrl":"https://doi.org/10.1002/pssa.202300221","url":null,"abstract":"Carbon nanospheres are successfully synthesized with a particle size of about 140 nm using a two‐step hydrothermal method and used the carbon nanospheres as the deposition template material on the surface of P25(TiO2) by means of vertical deposition method. The antiopaline TiO2 photonic crystal (PC) structure is further prepared via immersed carbon nanospheres in TiO2 precursor solution, and the antiopal PC is used as the scattering layer of the photoanode of dye‐sensitized solar cell (DSSCs). As a comparison, the antiopal PC reflective layer is also prepared on the photoanode of DSSCs using polystyrene nanospheres as the template material. The photoanodes with those PC scattering layers prepared with different template materials are fabricated into complete DSSCs. The final photoelectric conversion efficiency of the DSSCs prepared with carbon nanospheres as the template material reaches 7.02%, which is comparable to the cells prepared with polystyrene nanospheres as the template material. The efficiency of the cell with the scattering layer is increased by about 16% compared with that of the normal DSSC based on P25.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86646723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High‐Performance Self‐Assembled ZnO Nanowrinkle Network Structured Photodetectors 高性能自组装ZnO纳米皱纹网络结构光电探测器

Physica status solidi (A): Applied research Pub Date : 2023-06-24 DOI: 10.1002/pssa.202300338

Jongyun Choi, G. Lee, Sung‐Nam Lee

引用次数: 0

Stepped Doped High k VDMOS: Switching Characteristics 阶梯掺杂高k VDMOS:开关特性

Physica status solidi (A): Applied research Pub Date : 2023-06-22 DOI: 10.1002/pssa.202300311

Shaivya Shukla, Onika Parmar, Amit Singh Rajput, Zeesha Mishra

引用次数: 0

Electron Beam‐Irradiated Au/h‐BN/Au Cross‐Point Memristors 电子束辐照Au/h - BN/Au交叉点记忆电阻器

Physica status solidi (A): Applied research Pub Date : 2023-06-22 DOI: 10.1002/pssa.202300204

Mucun Li, E. Wu, Linyan Xu, X. Hu, Xiaopu Miao, Jing Liu

{"title":"Electron Beam‐Irradiated Au/h‐BN/Au Cross‐Point Memristors","authors":"Mucun Li, E. Wu, Linyan Xu, X. Hu, Xiaopu Miao, Jing Liu","doi":"10.1002/pssa.202300204","DOIUrl":"https://doi.org/10.1002/pssa.202300204","url":null,"abstract":"Applying 2D materials to build memristors is a promising strategy that has attracted great interest in the semiconductor field in recent years. Although the study of memristors based on chemical vapor deposition (CVD) with lattice defects has been well established, the applications and detailed knowledge of the ones using mechanical exfoliation with good lattice structures are still scarce. Herein, the resistive switching behavior of an array of 3 μm × 3 μm cross‐point Au/25.7 nm mechanically exfoliated h‐BN/Au memristors is investigated after a controllable electron beam doping process. An electron beam irradiation strategy is first proposed to treat h‐BN memristors with intact lattice structure. Devices with moderate electron beam irradiation, which is about 1500 or 2000 mC cm−2, show good resistive switching curves. The memristor device has a repeatable resistive switching behavior, an on/off ratio of 108, a set voltage as low as 5 V, and a retention higher than 1000 s. This strategy provides an alternative method to improve the performance of memristor. Mechanical exfoliated h‐BN preserves the lattice structure, which is an immediate advantage to fabricate memristor using it compared to that fabricated by CVD.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76769681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Vertical Distribution of Molecular Orientation and its Implication on Charge Transport in Floating Films of Conjugated Polymers 共轭聚合物浮膜中分子取向的垂直分布及其对电荷输运的影响

Physica status solidi (A): Applied research Pub Date : 2023-06-21 DOI: 10.1002/pssa.202300236

Harshita Rai, Kumar Vivek Gaurav, Safalmani Pradhan, Moulika Desu, Shubham Sharma, Shuichi Nagamatsu, S. Pandey

引用次数: 0

Optimization of Device Parameters for Back Contact Transparent Conductive Oxide Less Dye Sensitized Solar Cells Fabrication 背接触透明导电无氧化物染料敏化太阳能电池器件参数优化

Physica status solidi (A): Applied research Pub Date : 2023-06-20 DOI: 10.1002/pssa.202300095

Md. Zaman Molla, A. Baranwal, S. Hayase, S. Pandey

引用次数: 0