Physica status solidi (A): Applied research最新文献_第10页

Development of High‐Reflectivity and Antireflection Dielectric Multilayer Mirrors for AlGaN‐Based Ultraviolet‐B Laser Diodes and their Device Applications AlGaN基紫外- B激光二极管高反射率和抗反射介质多层反射镜的研制及其器件应用

Physica status solidi (A): Applied research Pub Date : 2023-05-28 DOI: 10.1002/pssa.202200831

Ayumu Yabutani, Ryota Hasegawa, Ryosuke Kondo, Eri Matsubara, D. Imai, S. Iwayama, Yoshito Jin, Tatsuya Matsumoto, M. Toramaru, H. Torii, T. Takeuchi, S. Kamiyama, H. Miyake, M. Iwaya

{"title":"Development of High‐Reflectivity and Antireflection Dielectric Multilayer Mirrors for AlGaN‐Based Ultraviolet‐B Laser Diodes and their Device Applications","authors":"Ayumu Yabutani, Ryota Hasegawa, Ryosuke Kondo, Eri Matsubara, D. Imai, S. Iwayama, Yoshito Jin, Tatsuya Matsumoto, M. Toramaru, H. Torii, T. Takeuchi, S. Kamiyama, H. Miyake, M. Iwaya","doi":"10.1002/pssa.202200831","DOIUrl":"https://doi.org/10.1002/pssa.202200831","url":null,"abstract":"Fabrication techniques for high‐reflectivity (HR) and antireflection (AR) dielectric multilayer mirrors for AlGaN‐based ultraviolet‐B (UV‐B) laser diodes are developed. After depositing several dielectric materials and evaluating their complex refractive indices via ellipsometry, it is determined that SiO2 as a low‐refractive‐index material and Ta2O5 as a high‐refractive‐index material are appropriate material combinations in the UV‐B region at a light wavelength of ≈300 nm due to their low extinction coefficients and large refractive index difference. Based on these results, HR mirror with a reflectance of >99% in the UV‐B region at a center wavelength of 310 nm and an AR mirror with a reflectance of ≈8% in the same wavelength range are demonstrated; a mirror with reflectance that is almost equal to the designed value is demonstrated. Furthermore, these mirrors are coated on the respective edge surfaces of the UV‐B laser diodes. A comparison of the characteristics of the same device before and after edge coating reveals a reduction in the threshold current density of laser oscillation, whereas, simultaneously, an increase in slope efficiency and external differential quantum efficiency is observed. The improvement of these device characteristics, estimated from the above reflectance values, is confirmed to be almost theoretically explainable.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83106344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dipolar Coupling at Interfaces of Ultrathin Semiconductors, Semimetals, Plasmonic Nanoparticles and Molecules 超薄半导体、半金属、等离子体纳米粒子和分子界面的偶极耦合

Physica status solidi (A): Applied research Pub Date : 2023-05-26 DOI: 10.1002/pssa.202300102

Lara Greten, Robert Salzwedel, M. Katzer, Henry Mittenzwey, D. Christiansen, A. Knorr, M. Selig

引用次数: 1

Structural, Optical, and Chemical Characteristics of High‐Quality PbI2 Thin Films via Chemical Solution Deposition with Thermal Annealing 热退火化学溶液沉积制备高质量PbI2薄膜的结构、光学和化学特性

Physica status solidi (A): Applied research Pub Date : 2023-05-25 DOI: 10.1002/pssa.202300206

J. Solis-Mosquera, D. Cabrera‐Germán, H. Santacruz-Ortega, M. Acosta-Elías, M. Sotelo-Lerma

{"title":"Structural, Optical, and Chemical Characteristics of High‐Quality PbI2 Thin Films via Chemical Solution Deposition with Thermal Annealing","authors":"J. Solis-Mosquera, D. Cabrera‐Germán, H. Santacruz-Ortega, M. Acosta-Elías, M. Sotelo-Lerma","doi":"10.1002/pssa.202300206","DOIUrl":"https://doi.org/10.1002/pssa.202300206","url":null,"abstract":"Herein, a synthesis method for obtaining lead iodide through chemical bath deposition, a type of chemical solution deposition without the use of organic solvents, is presented; the process consists of three stages. In the first stage, tin hydroxide films are produced which act as a seed layer allowing for a better adherence of the film that is to be deposited. The second stage consists of the synthesis of the lead iodide films. Finally, annealing is done (100, 150, and 200 °C) with the purpose of promoting the polytypic transitions of the material and to study the effect of these structures on the properties of the material. Assessment of the structural and optical properties of the films is done by means of scanning electron microscopy, X‐ray diffraction, X‐ray photoelectron spectroscopy, optical spectroscopy, Raman spectroscopy, and transmission electron microscopy, where a direct influence of the annealing in the induction of polytypes is observed. The resultant PbI2 films have a large‐area coverage across the substrate, wide‐bandgap (2.38 eV), and a structure that belongs to the 2H and 4H polytypes. Hence, it is suggested from these results that the chemically deposited PbI2 thin films are promising candidates for large‐area optoelectronic applications.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"103 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80497017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Fabrication of Ultrasmall Si Encapsulated in Silicon Dioxide and Silicon Nitride as Alternative to Impurity Doping 二氧化硅和氮化硅包封超小硅替代杂质掺杂的制备

Physica status solidi (A): Applied research Pub Date : 2023-05-23 DOI: 10.1002/pssa.202300066

M. Frentzen, Michail Michailow, K. Ran, N. Wilck, J. Mayer, Sean C. Smith, D. König, J. Knoch

{"title":"Fabrication of Ultrasmall Si Encapsulated in Silicon Dioxide and Silicon Nitride as Alternative to Impurity Doping","authors":"M. Frentzen, Michail Michailow, K. Ran, N. Wilck, J. Mayer, Sean C. Smith, D. König, J. Knoch","doi":"10.1002/pssa.202300066","DOIUrl":"https://doi.org/10.1002/pssa.202300066","url":null,"abstract":"Further miniaturization of complementary metal oxide semiconductor devices based on impurity‐doped semiconductors is limited due to statistical fluctuation of the impurity concentration in very small volumes and dopant deactivation, increasing the resistance and power consumption. Based on density functional theory calculations and backed by experimental data, the nanoscale electronic structure shift induced by anions at surfaces (NESSIAS) has been described recently. It explains the structure shift of low‐doped single‐crystalline Si nanowells (Si‐NWs) with thicknesses ≤3 nm embedded in SiO2 (Si3N4) toward n‐type (p‐type) behavior. The influence of the anions is on the scale of a few nanometers, allowing for very steep p–n junctions without the drawbacks of impurity doping. The process to fabricate crystalline silicon (c‐Si) NWs embedded in SiO2 and Si3N4, starting with silicon on insulator (SOI) across 15 × 15 mm2 samples, is described. Four possible methods to fabricate Si‐NWs by thinning down single‐crystalline top‐Si of an SOI substrate are evaluated in terms of reproducibility and surface roughness.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82636442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Anionic Fluorine and Cationic Niobium Codoped Tin Oxide Thin Films as Transparent Conducting Electrodes for Optoelectronic Applications 阴离子氟和阳离子铌共掺杂氧化锡薄膜在光电透明导电电极中的应用

Physica status solidi (A): Applied research Pub Date : 2023-05-20 DOI: 10.1002/pssa.202200703

R. Muniramaiah, N. P. Reddy, R. Santhosh, Gouranga Maharana, Jean Maria Fernandes, D. Padmanaban, M. Kovendhan, G. Veerappan, Gangalakurti Laxminarayana, Murali Banavoth, D. Joseph

{"title":"Anionic Fluorine and Cationic Niobium Codoped Tin Oxide Thin Films as Transparent Conducting Electrodes for Optoelectronic Applications","authors":"R. Muniramaiah, N. P. Reddy, R. Santhosh, Gouranga Maharana, Jean Maria Fernandes, D. Padmanaban, M. Kovendhan, G. Veerappan, Gangalakurti Laxminarayana, Murali Banavoth, D. Joseph","doi":"10.1002/pssa.202200703","DOIUrl":"https://doi.org/10.1002/pssa.202200703","url":null,"abstract":"Exploration of alternatives for supplementing indium tin oxide electrode is currently trending due to scarcity of indium, leading to a steep increase in the cost of related optoelectronic components. Codoping of niobium (Nb) and fluorine (F) into SnO2 lattice as cationic and anionic dopants, respectively, is explored by spray deposition technique. A fixed 10 wt% F and varying Nb concentration from 0 to 5 wt% is incorporated into the SnO2 lattice. X‐ray diffraction reveals substitution of Nb and F into the SnO2 lattice without altering the structure. Optical transmittance is found to increase with Nb content up to 4% of Nb (77.59%), and it decreases thereafter. Scanning electron microscope and optical profiler imply a relatively smooth surface with sharp‐tipped particles which vary with Nb concentration. Sheet resistance decreases up to 3 wt% of Nb doping and increases thereafter. Contact angle measurement indicates that upon doping with Nb, the films turn hydrophilic. Among the deposited films, 4 wt% of Nb‐doped film shows the highest figure of merit of 5.01 × 10−3 Ω−1. The surface work function of the 4 wt% Nb‐doped SnO2 film is 4,687.85 meV. The optimal films are tested as electrodes in dye‐sensitized solar cells and are discussed in detail.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82820572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simulation and Fabrication of Higher‐Mode Lamb Wave Acoustic Devices for Sensing Applications 用于传感应用的高模兰姆波声学器件的仿真与制造

Physica status solidi (A): Applied research Pub Date : 2023-05-17 DOI: 10.1002/pssa.202200760

M. Bharati, Lokesh Rana, Reema Gupta, Anjali Sharma, P. Jha, M. Tomar

引用次数: 0

Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field Effect Transistors N -极性AlGaN/AlN异质结构场效应晶体管的电性能研究

Physica status solidi (A): Applied research Pub Date : 2023-05-16 DOI: 10.1002/pssa.202200871

Daisuke Inahara, S. Matsuda, W. Matsumura, Ryo Okuno, Koki Hanasaku, Taketo Kowaki, Minagi Miyamoto, Yongzhao Yao, Y. Ishikawa, A. Tanaka, Y. Honda, S. Nitta, H. Amano, S. Kurai, N. Okada, Y. Yamada

引用次数: 0

Diffusion of Magnesium in Czochralski Silicon 镁在直克拉氏硅中的扩散

Physica status solidi (A): Applied research Pub Date : 2023-05-13 DOI: 10.1002/pssa.202300130

L. Portsel, A. Lodygin, N. Abrosimov, Y. Astrov

引用次数: 0

Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier 利用V坑层和阶跃梯度GaN势垒改善InGaN红色发光二极管的性能

Physica status solidi (A): Applied research Pub Date : 2023-05-10 DOI: 10.1002/pssa.202300086

C. Jia, Chunliang Shen, Qi Wang

{"title":"Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier","authors":"C. Jia, Chunliang Shen, Qi Wang","doi":"10.1002/pssa.202300086","DOIUrl":"https://doi.org/10.1002/pssa.202300086","url":null,"abstract":"The carrier‐transport properties of InGaN red light‐emitting diode (LED) with V‐pits layer and step‐graded GaN barrier are investigated. By using V‐pits layer technology, the inverted pyramid–shaped V‐pit layer forms an energy barrier around the dislocation, inhibits the lateral diffusion of electrons from active layer to the dislocation center, and reduces the probability of non‐radiative recombination rate of electrons and holes. With the increase of the horizontal opening width of the V‐pits layer, the uniformity of holes concentration distribution in InGaN/GaN multiple quantum well (MQWs)‐active region is improved significantly. Compared with the traditional InGaN/GaN MQWs‐active region with fixed well/barrier thickness, step gradient GaN barrier is adopted in the active layer of InGaN red LED, which can reduce the length of the transmission path and improve the injection efficiency of holes into deep quantum wells close to the n‐type region. At injection current density of 200 A cm−2, the internal quantum efficiency of LED D with V‐pits layer and step‐graded GaN barrier is improved by 56.4% as compared with that of reference LED A. In addition, the efficiency droop of LED D can also be effectively alleviated as compared with that of reference LED A.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"25 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78204911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimizing Output Performances in Stationery Papers–Based Hybrid Inorganic–Organic Flexible Thermoelectric Generators 基于文具纸的无机-有机混合柔性热电发电机输出性能优化

Physica status solidi (A): Applied research Pub Date : 2023-05-10 DOI: 10.1002/pssa.202300228

Bhargab P. Mondal, Surajit Das, P. Ranjan, A. Datta

{"title":"Optimizing Output Performances in Stationery Papers–Based Hybrid Inorganic–Organic Flexible Thermoelectric Generators","authors":"Bhargab P. Mondal, Surajit Das, P. Ranjan, A. Datta","doi":"10.1002/pssa.202300228","DOIUrl":"https://doi.org/10.1002/pssa.202300228","url":null,"abstract":"Flexible and foldable paper‐based thermoelectric generators (PTEGs) have drawn industrial attention due to the wide applications in heat energy harvesting and sensing. Herein, optimization of the output performances of flexible and hybrid inorganic–organic PTEGs fabricated on stationery paper substrates from poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and graphite as p‐type and n‐type materials, respectively, is presented. By choosing simplistic processes such as polyethyleneimine (PEI)‐treated graphite pencil traces and brush‐painted PEDOT:PSS films, robust and sustainable PTEG devices are fabricated. It is first time shown that different qualities of stationery papers can have significant impact on the output performance of PTEGs, attributed to their variance in substrate roughness. Thus, output powers of ≈1.93 and ≈0.68 nW for ΔT = 70 K are obtained for TE generators prepared from emery and office paper legs (four‐pair assembled on Kapton), respectively, suggesting emery paper to have significant better performance. Transient flexibility and fatigue of each device type are also tested where emery paper–based PTEG appears to be more robust. A detail comparison of the device performances on the different types of paper substrates are exclusively presented experimentally and thereafter computationally validated by COMSOL modeling to predictably control and enhance the output performance of reported PTEGs.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"72 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91125756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1