Physica status solidi (A): Applied research最新文献

{"title":"Performance of Improvement of AlGaN‐Based Deep UV Light‐Emitting Diode with Two Parts Linearly Graded Barriers","authors":"P. Ren, Hao-Xiang Lin, Li-E. Cai, Chao-Zhi Xu, Zhi-Chao Chen, Hongyi Lin, F. Xiong, Jinman Huang, Linlin Cai","doi":"10.1002/pssa.202300276","DOIUrl":"https://doi.org/10.1002/pssa.202300276","url":null,"abstract":"Herein, a novel AlGaN‐based multiple quantum well (MQW) deep UV light‐emitting diode (DUV‐LED) structure with two parts linearly graded barriers is presented. The simulation result shows that at a current of 50 mA, the light output power of the DUV‐LED with two parts linearly graded barrier MQWs has significant improvement as compared to stationary barriers. The electroluminescence spectrum and radiative recombination rate of novel DUV‐LEDs are also larger more than twice that of the conventional QW structure. The reason is that the injection efficiency of holes is increased which helps improve the hole and electron concentration in the active area. Meanwhile, the electric field is also decreased by using two parts linearly graded quantum barriers, and according to reduce the electric field the quantum‐confined Stark effect and the bend of the energy band get relieved.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"118 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83963617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved Characteristics of Fluorene‐type Polymer Light‐Emitting Devices Based on Multilayer Formation from Polymers and Solution‐Processable Wide Bandgap Inorganic Copper(I) Thiocyanate with p‐Type Conduction and High Refractive Index","authors":"H. Kajii, Yuto Takayama, Shinsei Yamada, Maowei Huang, M. Kondow","doi":"10.1002/pssa.202300258","DOIUrl":"https://doi.org/10.1002/pssa.202300258","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"68 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83974020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Initial Photocarrier Generation Process in Organic Photovoltaics Observed with Light‐Triggered Time‐Domain Reflectometry","authors":"Tomoaki Mashiko, Koki Takano, Akira Kaino, Sou Kuromasa, Shintaro Fujii, Tatsuya Omori, M. Sakai, K. Kudo, H. Mino","doi":"10.1002/pssa.202300142","DOIUrl":"https://doi.org/10.1002/pssa.202300142","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"19 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81872966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Extension of Spin Dephasing Time of Continuously Excited Ensemble NV Centres by Double‐Quantum Ramsey Magnetometry with Spin Bath Driving","authors":"Ikuya Fujisaki, Yuta Araki, Yuji Hatano, Takeharu Sekiguchi, H. Kato, S. Onoda, Takeshi Oshima, Takayuki Shibata, T. Iwasaki, M. Hatano","doi":"10.1002/pssa.202300333","DOIUrl":"https://doi.org/10.1002/pssa.202300333","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"37 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82514713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"No‐Heating Deposition of Ferroelectric x%YO1.5–(100−x%)(Hf1−yZry)O2 Films","authors":"T. Mimura, Reijiro Shimura, Akinori Tateyama, Y. Nakamura, T. Shiraishi, H. Funakubo","doi":"10.1002/pssa.202300100","DOIUrl":"https://doi.org/10.1002/pssa.202300100","url":null,"abstract":"The no‐heating deposition of x%YO1.5–(100−x%)(Hf1−yZry)O2 (x = 0−0.09, y = 0, 0.25, 0.50, and 1) is achieved using a radio‐frequency magnetron sputtering method. To investigate the crystal structure and ferroelectric properties, epitaxial films are grown on (111)‐oriented indium tin oxide (ITO)/(111) Y‐stabilized zirconia (YSZ) substrates. The ferroelectric orthorhombic phase is obtained for the 5–7%YO1.5–95–93%HfO2 and 5%YO1.5–95% (Hf0.75Zr0.25)O2 films. The field‐induced phase transition from tetragonal to orthorhombic is confirmed for the 8%YO1.5–92%HfO2 and 5%YO1.5–95%(Hf0.50Zr0.50)O2 films. The remnant polarization (Pr) and coercive field (Ec) are 12–19 μC cm−2 and 2,000–2,500 kV cm−1, respectively. The piezoelectric response of 1 μm thick films is investigated for 6%YO1.5–94% HfO2, 7%YO1.5–93%HfO2, and 5%YO1.5–95%(Hf0.50Zr0.50)O2 films, which have piezoelectric coefficients (d33) of 1.0, 3.3, and 5.0 pm V−1, respectively. These results show no‐heating deposition of x%YO1.5–(100−x%)(Hf1−yZry)O2 films with ferroelectric and piezoelectric properties.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"62 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73585578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Group‐IV Semiconductor Materials for Nanoelectronics and Cryogenic Electronics","authors":"D. Hiller, R. Duffy, V. Georgiev, W. Weber","doi":"10.1002/pssa.202300429","DOIUrl":"https://doi.org/10.1002/pssa.202300429","url":null,"abstract":"This Special Section of physica status solidi (a) covers presentations of Symposium I held at the 2022 Fall-EMRS Meeting in Warsaw, Poland. Group-IV semiconductors, namely Si, Ge, Sn and their compounds, are the most important materials in microand nanoelectronics but they will also play a key role in future quantum devices. This symposium aimed to share the latest research in the field of group-IV nanoelectronic materials and devices. Silicon (Si) is one of the most dominant semiconductor materials with versatile applications ranging from electronics over photovoltaics to sensors and actuators. Due to their intrinsically higher electron and hole mobility germanium (Ge) or silicongermanium (SiGe) are rapidly gaining interest in microand nanoelectronics. The same holds true for tin (Sn) and its alloys with the other group-IV semiconductors (e.g., GeSn). In current nanoelectronics research with device dimensions approaching the single-digit-nanometer scale, nanowires are often the building blocks of transistors. However, many processing methods and device concepts have to be adopted since nanostructures are generically subject to nano-size and quantum effects. These effects involve for instance quantum confinement, dielectric confinement, detrimental surface states, statistical issues of doping ultrasmall volumes, etc. This bears the risk to deteriorate the performance and reliability or even cause complete failure of the transistors. On the other hand, if fully understood, nano-size and quantum effects may open up new vistas for increased performance, reduced power consumption or even routes towards quantum computing. Generally, nanostructures have a high surface-to-volume ratio and their properties are often dominated by the surface. Therefore, an increased understanding of the physical and chemical properties of group-IV semiconductor nanostructure interfaces to metals and dielectrics is mandatory to control and optimize gate control, threshold voltage, ohmic contacts, carrier transport, etc. Finally, simulations and modelling are crucial for nanoelectronics, starting from ab-initio methods to model physical/ quantum-chemical properties of group-IV nanostructures to device simulations modelling transport and performance. There are in total four research articles in this Special Section: Knoch et al. investigate by simulations and experiments the influence of the oxide-channel interfaces on the switching behavior of cryogenic field-effect transistors as well as the possibility to use a different approach than conventional doping for ultrasmall Si-nanostructures (article number 2300069). Ratschinski et al. report about another alternative silicon doping method, similar to modulation doping of III–V semiconductors, that is based on Al-doped SiO2 shells around Si nanowires (article number 2300068). The authors reveal that the electrical resistance of the nanowires is thereby reduced by several orders of magnitude. In article number 2300066, Frentzen","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"67 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81287019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of Different Nitrogen Plasmas Exposures of H‐Diamond (100) Surfaces on Ambient Oxygen Adsorption, Nitrogen Bonding and Thermal Stability Studied by X‐Ray Photoelectron Spectroscopy","authors":"M. K. Kuntumalla, A. Hoffman","doi":"10.1002/pssa.202300319","DOIUrl":"https://doi.org/10.1002/pssa.202300319","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"172 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72482297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Low Energy Argon Ions Etching on the 4H–SiCOI Composite Substrate Prepared by Crystal‐Ion‐Slicing Technique","authors":"Jintao Xu, W. Luo, Dailei Zhu, Gengyu Wang, Yuedong Wang, Y. Shuai, Chuangui Wu, W. Zhang","doi":"10.1002/pssa.202300288","DOIUrl":"https://doi.org/10.1002/pssa.202300288","url":null,"abstract":"4H–SiC single‐crystal film is transferred to SiO2/Si insulating substrate by crystal‐ion‐slicing technology to form silicon carbide‐on‐insulator composite substrate, and the composite substrate is etched by low energy Ar+ ions irradiation. The amorphous oxide layer and defect layer are found on the surface of the exfoliated SiC film by using transmission electron microscopy and energy‐dispersive spectroscopy. Scanning electron microscopy, atomic force microscopy, and Raman spectroscopy are used to characterize the thickness, roughness, and crystal quality of the exfoliated SiC film. The result shows that the thickness of the film decreases from 1.238 to 0.911 μm, and the root mean square roughness decreases from 1.408 to 0.635 nm. Raman spectra show that the crystal quality of the SiC film is improved after etching. Moreover, the oxidation layer and defect layer on the surface of the SiC film can be quickly etched by Ar+ ions irradiation.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"114 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79242668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"P(VDF/TrFE) Thin Film Piezoelectric Actuators Sealed Parylene C for Medical Micropumps","authors":"Keigo Shikata, Y. Koshiba, S. Horike, K. Ishida","doi":"10.1002/pssa.202300250","DOIUrl":"https://doi.org/10.1002/pssa.202300250","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"24 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87443853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Binary Addressable Optical Multiplexing Waveguides via Electrochromic Switching","authors":"Seon-Young Rhim, Max Heyl, Kurt Busch, E. List‐Kratochvil","doi":"10.1002/pssa.202300177","DOIUrl":"https://doi.org/10.1002/pssa.202300177","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87890355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}