Controlling In‐Plane Magnetic Anisotropy of Co Films on MgO Substrates using Glancing Angle Deposition

A. Frisk, B. Achinuq, D. G. Newman, E. Heppell, M. Da̧browski, R. Hicken, G. van der Laan, T. Hesjedal
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引用次数: 1

Abstract

The ability to control the in‐plane magnetic anisotropy of a thin film is important for magnetic device applications. One way of accomplishing this task is by glancing angle deposition (GLAD). Herein, thin Co layers have been deposited using GLAD magnetron sputtering on MgO(001) and MgO(110) substrates. For Co films on MgO(001), the in‐plane anisotropy direction can be directly controlled via the deposition angle. In contrast, for Co on MgO(110), the anisotropy due to the deposition angle competes with the anisotropy induced by the substrate, while the growth parameters determine which contribution dominates. On the other hand, while on MgO(001) the deposition angle as well as the film thickness affect the strength of the Co in‐plane anisotropy, no influence of these parameters on the magnetic properties is found for films on MgO(110).
利用掠射角沉积控制MgO衬底上Co膜的面内磁各向异性
控制薄膜平面内磁各向异性的能力对于磁性器件的应用非常重要。完成这项任务的一种方法是掠角沉积(GLAD)。本文利用GLAD磁控溅射在MgO(001)和MgO(110)衬底上沉积了薄的Co层。对于MgO(001)上的Co薄膜,可以通过沉积角直接控制其平面内各向异性方向。相比之下,对于MgO上的Co(110),沉积角引起的各向异性与衬底引起的各向异性相互竞争,而生长参数决定了哪一种贡献占主导地位。另一方面,在MgO(001)上,沉积角度和薄膜厚度会影响Co -平面各向异性的强度,但这些参数对MgO薄膜的磁性能没有影响(110)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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