Congying Ding, Le Wang, Rabiul Islam, Shouheng Zhang, Xia Wang, Hongli Li, W. He, Xing-hua Zhu, Zhao Yao, Zhejun Jin, Guoxia Zhao, Yong Peng, G. Miao, Shandong Li
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引用次数: 0
摘要
从理论上讲,FeCo外延膜的四方晶格畸变会导致非常大的面内磁各向异性场,从而导致极高的铁磁共振(FMR)频率。本文中,Fe 75 Co 25 $\left(\text{Fe}\right)_{75} \left(\text{Co}\right)_{25}$薄膜被外延生长在(001)MgAl2O4单晶衬底上。在FeCo薄膜中发现了A≠b≠c $a \neq b \neq c$的三斜晶格畸变,而不是四方晶格畸变。立方对称破缺导致易轴偏离100 $100$方向,形成沿面外[001]方向具有强垂直磁各向异性(PMA)的磁矩分布,面内分量偏离([10 100])方向。前者的有效场高达1.5-2.5 T,足以克服薄膜形状的各向异性,而后者的有效场保持在0.05 T左右的低值。应变诱导的PMA在较厚的薄膜中逐渐松弛到平面内,并留下一个应变亚层。因此,实现了超过40 GHz的极高面外FMR频率,同时伴随着8 GHz左右的较低面内FMR频率。该研究提供了一种可能的方法来制备具有极高谐振频率的自偏置软磁薄膜,用于微波集成电路。
Extremely High Ferromagnetic Resonance Frequency Induced by Triclinic Lattice Distortion in Epitaxial FeCo/MgAl2O4 (001) Films
Theoretically, tetragonal lattice distortion of FeCo epitaxial films can result in a very large in‐plane magnetic anisotropy field, leading to an extremely high ferromagnetic resonance (FMR) frequency. Herein, Fe 75 Co 25 $\left(\text{Fe}\right)_{75} \left(\text{Co}\right)_{25}$ thin films are epitaxially grown on (001) MgAl2O4 single‐crystal substrates. A triclinic lattice distortion with a ≠ b ≠ c $a \neq b \neq c$ , instead of a tetragonal one, is found in the FeCo films. The cubic symmetry breaking leads to a deviation of easy axes from the 100 $100$ directions, forming a distribution of magnetic moments with a strong perpendicular magnetic anisotropy (PMA) along the out‐of‐plane [001] directions and a deviation of the in‐plane components from the ([10 100]) directions. The effective field of the former is as high as 1.5–2.5 T, enough to overcome the thin film shape anisotropy, while that of the latter stays at a low value of around 0.05 T. The strain‐induced PMA gradually relaxes to in‐plane for thicker films with a strained sublayer remaining. As a result, an extremely high out‐of‐plane FMR frequency over 40 GHz is achieved, accompanied by a lower in‐plane FMR frequency around 8 GHz. This study provides a possible approach to prepare self‐biased soft magnetic films with extremely high‐resonance frequency for applications in microwave‐integrated circuits.