Physica status solidi (A): Applied research最新文献_第5页

Fabrication and Local Electrical Characterization of p–n Junction Copper Phthalocyanine Nanorods p-n结酞菁铜纳米棒的制备及局部电特性

Physica status solidi (A): Applied research Pub Date : 2023-07-29 DOI: 10.1002/pssa.202300243

Y. Koshiba, I. Sugimoto, S. Horike, Tatsuya Fukushima, K. Ishida

引用次数: 0

Effect of Heat Treatment on the Crystallization Behavior of Amorphous Manganese Dioxide and its Electrochemical Properties in Zinc‐Ion Battery Cathodes 热处理对锌离子电池负极中非晶二氧化锰结晶行为及其电化学性能的影响

Physica status solidi (A): Applied research Pub Date : 2023-07-29 DOI: 10.1002/pssa.202300329

Chengyan Gu, Zhenzhong Zhang, Yukai Zhao, F. Zhao, Yana Liu, Youwei Zhang

{"title":"Effect of Heat Treatment on the Crystallization Behavior of Amorphous Manganese Dioxide and its Electrochemical Properties in Zinc‐Ion Battery Cathodes","authors":"Chengyan Gu, Zhenzhong Zhang, Yukai Zhao, F. Zhao, Yana Liu, Youwei Zhang","doi":"10.1002/pssa.202300329","DOIUrl":"https://doi.org/10.1002/pssa.202300329","url":null,"abstract":"Herein, amorphous manganese dioxide (AMO) is prepared by the liquid‐phase coprecipitation method, the effect of heat treatment temperature on the microstructure, and phase composition of AMO and the electrochemical properties as cathode materials for aqueous Zn–MnO2 batteries are investigated. The results show that the AMO didn't crystallize at 250 °C, but its structure stability increases. When the temperature is 350 and 400 °C, part of the AMO crystallizes into rod‐shaped nano‐α‐MnO2 crystals. At 540 °C, the products crystallize into nano‐α‐MnO2 crystals. Continuing to increase the temperature to 650 °C, the structural stability of the products is further improved. Heat treatment leads to reduced specific surface area and porosity of the material, which in turn leads to reduced specific capacity and cycling stability. In addition, the heat‐treated products show a sharp drop in capacity during the discharge process; this was because the volume change caused by the irreversible phase change of the electrode material is difficult to release in the anisotropic crystal, resulting in the collapse of the structure. This study shows that unheated AMO is better than heat‐treated AMO as a cathode material for aqueous Zn–MnO2 battery cathode material in terms of overall performance and cost.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76176488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique 超临界流体技术研究硫处理对材料特性和电阻开关器件应用的影响

Physica status solidi (A): Applied research Pub Date : 2023-07-29 DOI: 10.1002/pssa.202300453

Jen-Wei Huang, Po-Hsun Chen, Tsung-Han Yeh, Chih-Cheng Yang

{"title":"Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique","authors":"Jen-Wei Huang, Po-Hsun Chen, Tsung-Han Yeh, Chih-Cheng Yang","doi":"10.1002/pssa.202300453","DOIUrl":"https://doi.org/10.1002/pssa.202300453","url":null,"abstract":"A sulfur treatment based on the supercritical fluid (SCF) treatment is proposed and its effect on the silver (Ag)‐doped material and device is investigated. The sulfur treatment is achieved by mixing sulfur powder with carbon dioxide (CO2) in a reaction chamber under high pressure (3000 psi) at low reacting temperature (120 °C). Based on the experimental results, the SCF sulfur treatment can dramatically change the Ag‐doped SiO2 (Ag:SiO2) thin‐film characteristics, including surface morphology, crystallization, chemical bonding, and mole elements in accordance with the analyses of various materials. In addition, the SCF sulfur treatment is also applied to the Ag:SiO2‐based device to verify the resistance switching (RS) properties. Based on electrical measurement results, the device with the SCF sulfur treatment exhibits better performance. The graduate RS behaviors also exhibit multilevel switching in both set and reset processes, which proves its possible applications of the proposed SCF sulfur treatment. In addition, the current fitting method is used to verify the RS properties to illustrate the carrier transportation characteristics of the Ag:SiO2‐based device with the SCF sulfur treatment.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"103 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76213188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Microplasma Illumination Enhancement in N+P‐Co‐Ion‐Implanted Nanocrystalline Diamond Films N+P - Co -离子注入纳米晶金刚石薄膜的微等离子体光照增强

Physica status solidi (A): Applied research Pub Date : 2023-07-29 DOI: 10.1002/pssa.202300157

S. K. Sethy, K. J. Sankaran, Prasanth Gupta, Joseph Palathinkal Thomas, Ajit Dash, John V. Kennedy, Kam Tong Leung, Ken Haenen

引用次数: 0

Optimization of a‐Si Thin‐Film Solar‐Cell Performance with Passivation and c‐Si Cap Layer 用钝化和c - Si帽层优化a - Si薄膜太阳能电池性能

Physica status solidi (A): Applied research Pub Date : 2023-07-28 DOI: 10.1002/pssa.202300213

M. Verma, S. Routray, G. S. Sahoo, G. P. Mishra

{"title":"Optimization of a‐Si Thin‐Film Solar‐Cell Performance with Passivation and c‐Si Cap Layer","authors":"M. Verma, S. Routray, G. S. Sahoo, G. P. Mishra","doi":"10.1002/pssa.202300213","DOIUrl":"https://doi.org/10.1002/pssa.202300213","url":null,"abstract":"A modified design of the a‐Si thin‐film solar cell (TFSC) is presented. The c‐Si cap layer is introduced to increase the photon absorption and hence the enhanced photo carriers increase the overall short‐circuit current. Whereas, the highly doped a‐Si passivation layer reduces the minority carrier flow and recombination at the rear side of the cell, and therefore the passivation layer is used to improve the open‐circuit voltage ( V oc ). The performance optimization and investigation of the cell characteristic is executed using the numerical simulation methodology. To further enhance the cell efficiency, the thickness and doping concentration of the c‐Si cap and a‐Si passivation layer are optimized. The improvement in absorption and passivation quality of the cell leads to the enhancement of 10.54 % in short‐circuit current density and 71.51 % improvement in the V oc , respectively. The designed a‐Si TFSC absorbs the incoming solar spectrum from 300 to 850 nm of wavelength and rest of the spectrum is transmitted. The external and internal quantum efficiency of the cell is well over 95 % . The optimized efficiency of 15.33 % is obtained for the designed cap layered a‐Si passivated cell in AM1.5 G environment using ray‐tracing methodology.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"633 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78980824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature 在室温下减轻重离子辐照诱导的p型SnO薄膜晶体管的降解

Physica status solidi (A): Applied research Pub Date : 2023-07-27 DOI: 10.1002/pssa.202300392

N. Al-Mamun, M. Rasel, Douglas E. Wolfe, A. Haque, R. Schoell, K. Hattar, Seung Ho Ryu, Seong Keun Kim

{"title":"Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature","authors":"N. Al-Mamun, M. Rasel, Douglas E. Wolfe, A. Haque, R. Schoell, K. Hattar, Seung Ho Ryu, Seong Keun Kim","doi":"10.1002/pssa.202300392","DOIUrl":"https://doi.org/10.1002/pssa.202300392","url":null,"abstract":"The study investigates the mitigation of radiation damage on p‐type SnO thin‐film transistors (TFTs) with a fast, room‐temperature annealing process. Atomic layer deposition is utilized to fabricate bottom‐gate TFTs of high‐quality p‐type SnO layers. After 2.8 MeV Au4+ irradiation at a fluence level of 5.2 × 1012 ions cm−2, the output drain current and on/off current ratio (Ion/Ioff) decrease by more than one order of magnitude, field‐effect mobility (μFE) reduces more than four times, and subthreshold swing (SS) increases more than four times along with a negative shift in threshold voltage. The observed degradation is attributed to increased surface roughness and defect density, as confirmed by scanning electron microscopy (SEM), high‐resolution micro‐Raman, and transmission electron microscopy (TEM) with geometric phase analysis (GPA). A technique is demonstrated to recover the device performance at room temperature and in less than a minute, using the electron wind force (EWF) obtained from low‐duty‐cycle high‐density pulsed current. At a pulsed current density of 4.0 × 105 A cm−2, approximately four times increase in Ion/Ioff is observed, 41% increase in μFE, and 20% decrease in the SS of the irradiated TFTs, suggesting effectiveness of the new annealing technique.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85555289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of External Plane Stress on Electric Parameters of AlGaN/GaN HEMT Heterostructures 外平面应力对AlGaN/GaN HEMT异质结构电参数的影响

Physica status solidi (A): Applied research Pub Date : 2023-07-22 DOI: 10.1002/pssa.202100078

B. Paszkiewicz, Bogdan Paszkiewicz, A. Dziedzic

{"title":"Influence of External Plane Stress on Electric Parameters of AlGaN/GaN HEMT Heterostructures","authors":"B. Paszkiewicz, Bogdan Paszkiewicz, A. Dziedzic","doi":"10.1002/pssa.202100078","DOIUrl":"https://doi.org/10.1002/pssa.202100078","url":null,"abstract":"Herein, the influence of stresses on parameters of 2D electron gas (2DEG) in AlGaN/GaN high‐electron‐mobility transistor‐type heterostructures grown on sapphire substrate by metal–organic vapor‐phase epitaxy technique is presented. The as‐grown heterostructures as well as Schottky diodes fabricated in them are subjected to compressive stress. The custom stressing system induces a homogeneous state of compressive stress in the samples without causing electrical side effects. Time‐dependent heterostructures characteristics of electron concentration, electron mobility, and bandgap width are measured. Additionally, in the case of the Schottky diodes, current–voltage characteristics and charge flow in the contact are measured. The measurements are performed in cycles with and without applied stresses to determine the repeatability of effects and to separate the influence of thermal and electrical factors. Additionally, electrical simulations are performed using APSYS software package. The obtained results lead to conclusions that are different to those reported in existing literature, especially in regard to the time dependence of the measured effects, that is essential to proper explanation. It is also shown that a key role in the change of 2DEG parameters is played by deep surface states and interlayer piezoelectric effects. Finally, the anisotropic character of the derived relations is demonstrated.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81663086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Flexible organic thin film transistors with liquid crystalline organic semiconductor, Ph‐BTBT‐10 柔性有机薄膜晶体管与液晶有机半导体，Ph‐BTBT‐10

Physica status solidi (A): Applied research Pub Date : 2023-07-21 DOI: 10.1002/pssa.202300281

Issei Suzuki, Shohei Koizumi, Yoshiaki Kito, J. Hanna, H. Iino

引用次数: 0

Interface Analysis of CuO/ZnO Heterojunction for Optoelectronic Applications: An Experimental and Simulation Study 光电应用中CuO/ZnO异质结界面分析:实验与仿真研究

Physica status solidi (A): Applied research Pub Date : 2023-07-21 DOI: 10.1002/pssa.202300256

Arige Sumanth, V. Mishra, M. Rao, Tejendra Dixit

引用次数: 0

Piezoresistive Performance of a Compliant Scalable Sensor Made of Low‐Cost Exfoliated Graphite Polymer Composites 低成本剥落石墨聚合物复合材料柔性可伸缩传感器的压阻性能

Physica status solidi (A): Applied research Pub Date : 2023-07-21 DOI: 10.1002/pssa.202300289

Ying Chen, Peng Wang, Ruishan Xie, Leizhi Jin, Haibin Liu

{"title":"Piezoresistive Performance of a Compliant Scalable Sensor Made of Low‐Cost Exfoliated Graphite Polymer Composites","authors":"Ying Chen, Peng Wang, Ruishan Xie, Leizhi Jin, Haibin Liu","doi":"10.1002/pssa.202300289","DOIUrl":"https://doi.org/10.1002/pssa.202300289","url":null,"abstract":"Compliant sensors have drawn considerable interests in human–robot interactions. However, it is still challenging to obtain reliable and reproducible performance at reduced costs, especially for scaled‐up sensing applications. This work investigates the piezoresistive performance of a low‐cost, scalable sensor, which is made by spray coating exfoliated graphite natural rubber latex composites (EG/latex) over an elastomeric substrate. The EG/latex sensor provides a uniform distribution in the sheet resistance (variation below 4%) over a large 10 cm × 10 cm area. The stabilized piezoresistive response under cyclic tests is found highly related to both the filler concentration and the strain region. The 8 wt% and the 10 wt% sensors show nonlinear piezoresistive response, while the 25 wt% sensor exhibits the best linearity with a high gauge factor (7.6) and the lowest hysteresis (0.043) under a maximum strain of 60%. The distinct piezoresistive behavior is found attributed to the different levels of microbreakage under the applied strain. Scalable sensing performance is demonstrated on a hand‐size glove spray‐coated with 25 wt% EG/latex. Effective localization of contacts over the continuous sensing glove is achieved via the technique of electrical impedance tomography, validating the potential of the cost‐competitive EG/latex sensor for scalable sensing applications.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74447158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0