Physica status solidi (A): Applied research最新文献_第5页

Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature 在室温下减轻重离子辐照诱导的p型SnO薄膜晶体管的降解

Physica status solidi (A): Applied research Pub Date : 2023-07-27 DOI: 10.1002/pssa.202300392

N. Al-Mamun, M. Rasel, Douglas E. Wolfe, A. Haque, R. Schoell, K. Hattar, Seung Ho Ryu, Seong Keun Kim

{"title":"Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature","authors":"N. Al-Mamun, M. Rasel, Douglas E. Wolfe, A. Haque, R. Schoell, K. Hattar, Seung Ho Ryu, Seong Keun Kim","doi":"10.1002/pssa.202300392","DOIUrl":"https://doi.org/10.1002/pssa.202300392","url":null,"abstract":"The study investigates the mitigation of radiation damage on p‐type SnO thin‐film transistors (TFTs) with a fast, room‐temperature annealing process. Atomic layer deposition is utilized to fabricate bottom‐gate TFTs of high‐quality p‐type SnO layers. After 2.8 MeV Au4+ irradiation at a fluence level of 5.2 × 1012 ions cm−2, the output drain current and on/off current ratio (Ion/Ioff) decrease by more than one order of magnitude, field‐effect mobility (μFE) reduces more than four times, and subthreshold swing (SS) increases more than four times along with a negative shift in threshold voltage. The observed degradation is attributed to increased surface roughness and defect density, as confirmed by scanning electron microscopy (SEM), high‐resolution micro‐Raman, and transmission electron microscopy (TEM) with geometric phase analysis (GPA). A technique is demonstrated to recover the device performance at room temperature and in less than a minute, using the electron wind force (EWF) obtained from low‐duty‐cycle high‐density pulsed current. At a pulsed current density of 4.0 × 105 A cm−2, approximately four times increase in Ion/Ioff is observed, 41% increase in μFE, and 20% decrease in the SS of the irradiated TFTs, suggesting effectiveness of the new annealing technique.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85555289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of External Plane Stress on Electric Parameters of AlGaN/GaN HEMT Heterostructures 外平面应力对AlGaN/GaN HEMT异质结构电参数的影响

Physica status solidi (A): Applied research Pub Date : 2023-07-22 DOI: 10.1002/pssa.202100078

B. Paszkiewicz, Bogdan Paszkiewicz, A. Dziedzic

{"title":"Influence of External Plane Stress on Electric Parameters of AlGaN/GaN HEMT Heterostructures","authors":"B. Paszkiewicz, Bogdan Paszkiewicz, A. Dziedzic","doi":"10.1002/pssa.202100078","DOIUrl":"https://doi.org/10.1002/pssa.202100078","url":null,"abstract":"Herein, the influence of stresses on parameters of 2D electron gas (2DEG) in AlGaN/GaN high‐electron‐mobility transistor‐type heterostructures grown on sapphire substrate by metal–organic vapor‐phase epitaxy technique is presented. The as‐grown heterostructures as well as Schottky diodes fabricated in them are subjected to compressive stress. The custom stressing system induces a homogeneous state of compressive stress in the samples without causing electrical side effects. Time‐dependent heterostructures characteristics of electron concentration, electron mobility, and bandgap width are measured. Additionally, in the case of the Schottky diodes, current–voltage characteristics and charge flow in the contact are measured. The measurements are performed in cycles with and without applied stresses to determine the repeatability of effects and to separate the influence of thermal and electrical factors. Additionally, electrical simulations are performed using APSYS software package. The obtained results lead to conclusions that are different to those reported in existing literature, especially in regard to the time dependence of the measured effects, that is essential to proper explanation. It is also shown that a key role in the change of 2DEG parameters is played by deep surface states and interlayer piezoelectric effects. Finally, the anisotropic character of the derived relations is demonstrated.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81663086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Flexible organic thin film transistors with liquid crystalline organic semiconductor, Ph‐BTBT‐10 柔性有机薄膜晶体管与液晶有机半导体，Ph‐BTBT‐10

Physica status solidi (A): Applied research Pub Date : 2023-07-21 DOI: 10.1002/pssa.202300281

Issei Suzuki, Shohei Koizumi, Yoshiaki Kito, J. Hanna, H. Iino

引用次数: 0

Interface Analysis of CuO/ZnO Heterojunction for Optoelectronic Applications: An Experimental and Simulation Study 光电应用中CuO/ZnO异质结界面分析:实验与仿真研究

Physica status solidi (A): Applied research Pub Date : 2023-07-21 DOI: 10.1002/pssa.202300256

Arige Sumanth, V. Mishra, M. Rao, Tejendra Dixit

引用次数: 0

Piezoresistive Performance of a Compliant Scalable Sensor Made of Low‐Cost Exfoliated Graphite Polymer Composites 低成本剥落石墨聚合物复合材料柔性可伸缩传感器的压阻性能

Physica status solidi (A): Applied research Pub Date : 2023-07-21 DOI: 10.1002/pssa.202300289

Ying Chen, Peng Wang, Ruishan Xie, Leizhi Jin, Haibin Liu

{"title":"Piezoresistive Performance of a Compliant Scalable Sensor Made of Low‐Cost Exfoliated Graphite Polymer Composites","authors":"Ying Chen, Peng Wang, Ruishan Xie, Leizhi Jin, Haibin Liu","doi":"10.1002/pssa.202300289","DOIUrl":"https://doi.org/10.1002/pssa.202300289","url":null,"abstract":"Compliant sensors have drawn considerable interests in human–robot interactions. However, it is still challenging to obtain reliable and reproducible performance at reduced costs, especially for scaled‐up sensing applications. This work investigates the piezoresistive performance of a low‐cost, scalable sensor, which is made by spray coating exfoliated graphite natural rubber latex composites (EG/latex) over an elastomeric substrate. The EG/latex sensor provides a uniform distribution in the sheet resistance (variation below 4%) over a large 10 cm × 10 cm area. The stabilized piezoresistive response under cyclic tests is found highly related to both the filler concentration and the strain region. The 8 wt% and the 10 wt% sensors show nonlinear piezoresistive response, while the 25 wt% sensor exhibits the best linearity with a high gauge factor (7.6) and the lowest hysteresis (0.043) under a maximum strain of 60%. The distinct piezoresistive behavior is found attributed to the different levels of microbreakage under the applied strain. Scalable sensing performance is demonstrated on a hand‐size glove spray‐coated with 25 wt% EG/latex. Effective localization of contacts over the continuous sensing glove is achieved via the technique of electrical impedance tomography, validating the potential of the cost‐competitive EG/latex sensor for scalable sensing applications.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74447158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atom Probe Tomography Advances Chalcogenide Phase‐Change and Thermoelectric Materials 原子探针层析成像技术在硫化物相变和热电材料方面的研究进展

Physica status solidi (A): Applied research Pub Date : 2023-07-21 DOI: 10.1002/pssa.202300425

Yuan Yu, O. Cojocaru-Mirédin, M. Wuttig

引用次数: 3

Gate Voltage Oscillation Model and Suppression Method for Enhancement‐Mode GaN Devices in Half‐Bridge Circuits 半桥电路中增强模式GaN器件的栅极电压振荡模型及抑制方法

Physica status solidi (A): Applied research Pub Date : 2023-07-21 DOI: 10.1002/pssa.202300296

Pan Luo, Jiamao Li, Yaopeng Zhao, Jia Li, Chong Wang, Lei Yang, Haibing Wen, Huanqing Cui

引用次数: 0

Evidence for hybrid inorganic‐organic transitions at the WS2/terrylene interface WS2/涤纶界面无机-有机杂化转变的证据

Physica status solidi (A): Applied research Pub Date : 2023-07-19 DOI: 10.1002/pssa.202300346

Boubacar Tanda Bonkano, S. Palato, J. Krumland, Sergey Kovalenko, Philipp Schwendke, M. Guerrini, Qiuyang Li, Xiaoyang Zhu, C. Cocchi, J. Stähler

引用次数: 1

Comparative study of surface activation steps for thermally grown oxide interface and optimal silanization 热生长氧化界面表面活化步骤与最佳硅化的比较研究

Physica status solidi (A): Applied research Pub Date : 2023-07-18 DOI: 10.1002/pssa.202300294

Divagar Murugan, Marcel Tintelott, Hesam Amiri, Martin Kasavetov, D. Besedin, S. Ingebrandt, X. Vu, Vivek Pachuri

{"title":"Comparative study of surface activation steps for thermally grown oxide interface and optimal silanization","authors":"Divagar Murugan, Marcel Tintelott, Hesam Amiri, Martin Kasavetov, D. Besedin, S. Ingebrandt, X. Vu, Vivek Pachuri","doi":"10.1002/pssa.202300294","DOIUrl":"https://doi.org/10.1002/pssa.202300294","url":null,"abstract":"Silanization is one of the widely explored surface modification strategies for biofunctionalization of oxide interfaces. For biosensor applications, silanes with active terminal groups such as amine, thiol, carboxylic, and aldehyde groups are utilized in routine. In near‐field sensing schemes like biologically sensitive field‐effect transistors, it is crucial to generate a homogeneous layer of silane to confine the biointeractions in close vicinity of the sensor interface. The homogeneity of such biofunctional layer is determined by the surface activation and silanization protocol being applied. Herein, the impact of the surface activation process and silanization on electrical characteristics of field‐effect devices is studied comprehensively using an electrolyte‐oxide‐semiconductor (EOS) capacitor with a high‐quality gate oxide. The thermally grown silicon oxide (SiO2) interface is activated using acidic mixtures and plasma treatment, while the subsequent silanization steps are investigated comparatively using two different silanes (3‐aminopropyl triethoxysilane (APTES) and 3‐glycidyloxypropyl trimethoxysilane (GPTMS) in wet‐chemical and vapor‐phase processes. Furthermore, the optimized silanization process is utilized to immobilize an oligo strand at the EOS capacitor surface, followed by the hybridization of complementary oligo strands. The optimized protocol holds the potential for large‐scale production of functional oxide interfaces for various applications.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81257444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

All‐Oxide Transparent Vertical Indium Tin Oxide and Aluminum‐Doped Zinc Oxide/β‐Ga2O3 Schottky Diodes 全氧化物透明垂直氧化铟锡和铝掺杂氧化锌/β - Ga2O3肖特基二极管

Physica status solidi (A): Applied research Pub Date : 2023-07-17 DOI: 10.1002/pssa.202300251

A. Taube, M. Borysiewicz, Oskar Sadowski, A. Wójcicka, Jarosław Tarenko, M. Wzorek

引用次数: 0