Physica status solidi (A): Applied research最新文献

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A Theoretical Approach for Detecting the Chikungunya Virus Based on 1D Photonic Crystals 基于一维光子晶体检测基孔肯雅病毒的理论方法
Physica status solidi (A): Applied research Pub Date : 2023-08-03 DOI: 10.1002/pssa.202300362
Karuppiah Kathiresan, N. R. Ramanujam, Karuppiah Poovendran, S. Taya
{"title":"A Theoretical Approach for Detecting the Chikungunya Virus Based on 1D Photonic Crystals","authors":"Karuppiah Kathiresan, N. R. Ramanujam, Karuppiah Poovendran, S. Taya","doi":"10.1002/pssa.202300362","DOIUrl":"https://doi.org/10.1002/pssa.202300362","url":null,"abstract":"In the current study, it is aimed at using defective 1D photonic crystals (PCs) to detect the chikungunya virus in various healthy and diseased blood samples composed of plasma, platelets, red blood cells, and uric acid. The proposed PC structure has 14 periods and consists of repeating SiC and SiO2 layers with a central cavity layer. When blood samples are injected into the cavity layer, the transmittance spectrum is examined theoretically by using a transfer matrix approach to determine how the wavelength of the defect mode changes. The cavity layer is 540 and 648 nm thick, and the work is carried out at different angles of incidence. The performance of the sensor is quantified by computing the sensitivity, figure of merit, quality factor, and limit of detection values of the sensor for various blood samples. The maximum sensitivity is 1205.5 nm RIU−1 and detection limit of the order is 10−6 in this proposed work. A lower value of sensor resolution of 0.01218 is also achieved. Such a high‐performance sensor is suitable for biosensing applications with better sensing capabilities.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74574075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced Performance of CdTe Solar Cells with Sb2Se3 Back Contacts Sb2Se3背触点增强CdTe太阳能电池性能
Physica status solidi (A): Applied research Pub Date : 2023-08-03 DOI: 10.1002/pssa.202300426
Fei Liu, Guangwei Wang, Zixiang Huang, Juan Tian, Deliang Wang
{"title":"Enhanced Performance of CdTe Solar Cells with Sb2Se3 Back Contacts","authors":"Fei Liu, Guangwei Wang, Zixiang Huang, Juan Tian, Deliang Wang","doi":"10.1002/pssa.202300426","DOIUrl":"https://doi.org/10.1002/pssa.202300426","url":null,"abstract":"The barrier at CdTe/metal interface severely limits the efficiency of CdTe photovoltaic devices. Herein, the effectiveness of a thermally evaporated Sb2Se3 buffer layer as a back contact in CdTe solar cells is investigated, revealing a significant enhancement in device performance. Through optimization of Sb2Se3 thickness, a remarkable increase in the open‐circuit voltage (VOC) to 804 mV is achieved, leading to a substantial efficiency improvement of 12.84% when compared to the Au‐only back contact device. X‐ray photoelectron spectroscopy (XPS) reveals a well‐matched energy band alignment at CdTe/Sb2Se3 interface, confirming favorable conditions for hole transport. To further enhance the device performance, Cu doping is implemented in the Sb2Se3 film, resulting in additional improvements to the VOC and fill factor (FF) of the Cu‐doped configuration to 819 mV and 72.35%, respectively, while also enhancing the overall efficiency to 14.3%.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76649034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nitride Semiconductors 氮化硅半导体
Physica status solidi (A): Applied research Pub Date : 2023-08-01 DOI: 10.1002/pssa.202300484
M. Kneissl, J. Christen, A. Hoffmann, B. Monemar, T. Wernicke, Ulrich T. Schwarz, Å. Haglund, M. Meneghini
{"title":"Nitride Semiconductors","authors":"M. Kneissl, J. Christen, A. Hoffmann, B. Monemar, T. Wernicke, Ulrich T. Schwarz, Å. Haglund, M. Meneghini","doi":"10.1002/pssa.202300484","DOIUrl":"https://doi.org/10.1002/pssa.202300484","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72517085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Cu Doping on Phase Transition, Thermal Strain, and Thermal Expansion Property in Polycrystalline Ni50Mn23−xCuxGa27 Alloys Cu掺杂对Ni50Mn23−xCuxGa27多晶合金相变、热应变和热膨胀性能的影响
Physica status solidi (A): Applied research Pub Date : 2023-07-31 DOI: 10.1002/pssa.202300348
Shengxian Wei, Fen E Hu, Li-ping Deng, Bao Yue, Yiming Cao, Xijia He, Yuanlei Zhang, Yanru Kang, K. Xu, Zhe Li
{"title":"Effect of Cu Doping on Phase Transition, Thermal Strain, and Thermal Expansion Property in Polycrystalline Ni50Mn23−xCuxGa27 Alloys","authors":"Shengxian Wei, Fen E Hu, Li-ping Deng, Bao Yue, Yiming Cao, Xijia He, Yuanlei Zhang, Yanru Kang, K. Xu, Zhe Li","doi":"10.1002/pssa.202300348","DOIUrl":"https://doi.org/10.1002/pssa.202300348","url":null,"abstract":"The influence of Cu doping on phase transition, thermal strain, and thermal expansion property of polycrystalline Ni50Mn23−xCuxGa27(x = 1, 3, 5, 6 and 7) alloys is investigated. The results show that with increasing Cu concentration, martensitic transformation gradually gets close to Curie transition. A magnetostructural transition (MST) is observed in samples with x = 6 and 7. Such MST can enhance magnitude of transformation strain. Besides, Ni50Mn23−xCuxGa27 alloys possess an isotropic, recoverable, and thermally stable thermal strain. Excitedly, Cu doping can effectively tune the phase transition, thermal strain, and thermal expansion properties of Ni50Mn23−xCuxGa27 alloys. Adjustable coefficients of thermal expansion from positive to negative are obtained by Cu‐doped Ni50Mn23−xCuxGa27 alloys. The average linear expansion coefficient (α) between −140.44 and −207.70 ppm K−1 is observed in samples with x = 6 and 7 for a narrow temperature span of 11–14 K. When the temperature span is about 72 K (x = 6) and 73 K (x = 7), which is the largest temperature span observed in Ni–Mn–Ga‐based alloys recently, the α values decrease to about −36 ppm K−1. These findings are beneficial for manipulating the thermal expansion property of Ni–Mn–Ga–Cu alloys and their multifunctional applications.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89788897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative Study on Thermal and Laser Sintering of Silver Nanocubes and Silver Nanoplates 纳米银立方和纳米银片热烧结和激光烧结的比较研究
Physica status solidi (A): Applied research Pub Date : 2023-07-30 DOI: 10.1002/pssa.202200889
Zhu Hui, X. Liu
{"title":"Comparative Study on Thermal and Laser Sintering of Silver Nanocubes and Silver Nanoplates","authors":"Zhu Hui, X. Liu","doi":"10.1002/pssa.202200889","DOIUrl":"https://doi.org/10.1002/pssa.202200889","url":null,"abstract":"Compared with silver nanowires and silver nanospheres, silver nanocubes and silver nanoplates with larger curvature structures like sharp vertices and edges have great potential in optical applications. In general, the controllable joining of silver nanomaterials has become an effective way to change the electrical and optical properties of silver nanomaterials in recent years. However, urgent research on the controllable joining of silver nanocubes or silver nanocubes is still rarely reported. After being thermal treated at 250 °C for 8 min, a good joining among silver nanocubes can be obtained without significant damage to the cubic structure. For laser sintering, with the increase of laser energy input, silver nanocubes gradually transform to spherical particles. Joining among few particles can be observed when silver nanocubes are scanned by 5 W of laser at 1.0 mm s−1. Obvious joining among silver nanocubes can be obtained by thermal treating at 300 °C for 5 min and laser scanning at 7 W at 0.2 mm s−1. Thermal heating is more suitable for forming different degrees of connection between silver nanocubes or between silver nanocubes, while laser treatment is suitable for changing the shape of silver nanocubes or silver nanocubes without obvious connection.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90949569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and Local Electrical Characterization of p–n Junction Copper Phthalocyanine Nanorods p-n结酞菁铜纳米棒的制备及局部电特性
Physica status solidi (A): Applied research Pub Date : 2023-07-29 DOI: 10.1002/pssa.202300243
Y. Koshiba, I. Sugimoto, S. Horike, Tatsuya Fukushima, K. Ishida
{"title":"Fabrication and Local Electrical Characterization of p–n Junction Copper Phthalocyanine Nanorods","authors":"Y. Koshiba, I. Sugimoto, S. Horike, Tatsuya Fukushima, K. Ishida","doi":"10.1002/pssa.202300243","DOIUrl":"https://doi.org/10.1002/pssa.202300243","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"43 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72509282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Heat Treatment on the Crystallization Behavior of Amorphous Manganese Dioxide and its Electrochemical Properties in Zinc‐Ion Battery Cathodes 热处理对锌离子电池负极中非晶二氧化锰结晶行为及其电化学性能的影响
Physica status solidi (A): Applied research Pub Date : 2023-07-29 DOI: 10.1002/pssa.202300329
Chengyan Gu, Zhenzhong Zhang, Yukai Zhao, F. Zhao, Yana Liu, Youwei Zhang
{"title":"Effect of Heat Treatment on the Crystallization Behavior of Amorphous Manganese Dioxide and its Electrochemical Properties in Zinc‐Ion Battery Cathodes","authors":"Chengyan Gu, Zhenzhong Zhang, Yukai Zhao, F. Zhao, Yana Liu, Youwei Zhang","doi":"10.1002/pssa.202300329","DOIUrl":"https://doi.org/10.1002/pssa.202300329","url":null,"abstract":"Herein, amorphous manganese dioxide (AMO) is prepared by the liquid‐phase coprecipitation method, the effect of heat treatment temperature on the microstructure, and phase composition of AMO and the electrochemical properties as cathode materials for aqueous Zn–MnO2 batteries are investigated. The results show that the AMO didn't crystallize at 250 °C, but its structure stability increases. When the temperature is 350 and 400 °C, part of the AMO crystallizes into rod‐shaped nano‐α‐MnO2 crystals. At 540 °C, the products crystallize into nano‐α‐MnO2 crystals. Continuing to increase the temperature to 650 °C, the structural stability of the products is further improved. Heat treatment leads to reduced specific surface area and porosity of the material, which in turn leads to reduced specific capacity and cycling stability. In addition, the heat‐treated products show a sharp drop in capacity during the discharge process; this was because the volume change caused by the irreversible phase change of the electrode material is difficult to release in the anisotropic crystal, resulting in the collapse of the structure. This study shows that unheated AMO is better than heat‐treated AMO as a cathode material for aqueous Zn–MnO2 battery cathode material in terms of overall performance and cost.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76176488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique 超临界流体技术研究硫处理对材料特性和电阻开关器件应用的影响
Physica status solidi (A): Applied research Pub Date : 2023-07-29 DOI: 10.1002/pssa.202300453
Jen-Wei Huang, Po-Hsun Chen, Tsung-Han Yeh, Chih-Cheng Yang
{"title":"Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique","authors":"Jen-Wei Huang, Po-Hsun Chen, Tsung-Han Yeh, Chih-Cheng Yang","doi":"10.1002/pssa.202300453","DOIUrl":"https://doi.org/10.1002/pssa.202300453","url":null,"abstract":"A sulfur treatment based on the supercritical fluid (SCF) treatment is proposed and its effect on the silver (Ag)‐doped material and device is investigated. The sulfur treatment is achieved by mixing sulfur powder with carbon dioxide (CO2) in a reaction chamber under high pressure (3000 psi) at low reacting temperature (120 °C). Based on the experimental results, the SCF sulfur treatment can dramatically change the Ag‐doped SiO2 (Ag:SiO2) thin‐film characteristics, including surface morphology, crystallization, chemical bonding, and mole elements in accordance with the analyses of various materials. In addition, the SCF sulfur treatment is also applied to the Ag:SiO2‐based device to verify the resistance switching (RS) properties. Based on electrical measurement results, the device with the SCF sulfur treatment exhibits better performance. The graduate RS behaviors also exhibit multilevel switching in both set and reset processes, which proves its possible applications of the proposed SCF sulfur treatment. In addition, the current fitting method is used to verify the RS properties to illustrate the carrier transportation characteristics of the Ag:SiO2‐based device with the SCF sulfur treatment.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"103 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76213188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Microplasma Illumination Enhancement in N+P‐Co‐Ion‐Implanted Nanocrystalline Diamond Films N+P - Co -离子注入纳米晶金刚石薄膜的微等离子体光照增强
Physica status solidi (A): Applied research Pub Date : 2023-07-29 DOI: 10.1002/pssa.202300157
S. K. Sethy, K. J. Sankaran, Prasanth Gupta, Joseph Palathinkal Thomas, Ajit Dash, John V. Kennedy, Kam Tong Leung, Ken Haenen
{"title":"Microplasma Illumination Enhancement in N+P‐Co‐Ion‐Implanted Nanocrystalline Diamond Films","authors":"S. K. Sethy, K. J. Sankaran, Prasanth Gupta, Joseph Palathinkal Thomas, Ajit Dash, John V. Kennedy, Kam Tong Leung, Ken Haenen","doi":"10.1002/pssa.202300157","DOIUrl":"https://doi.org/10.1002/pssa.202300157","url":null,"abstract":"N‐ and P‐co‐ion implantation enhances the electrical conductivity of nanocrystalline diamond films to 6.9 s cm−1 and improves the microplasma illumination (MI) characteristics of the films to a low breakdown voltage of 340 V, large plasma current density of 6.3 mA cm−2 (@510 V) with plasma life‐time stability of 10 h. N ions induce nanographitic phases in the films and P ions lower the resistance at the diamond‐to‐Si interface together promoting the conducting channels for effective electron transport, consequently attaining the improved MI properties of the films.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90113721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of a‐Si Thin‐Film Solar‐Cell Performance with Passivation and c‐Si Cap Layer 用钝化和c - Si帽层优化a - Si薄膜太阳能电池性能
Physica status solidi (A): Applied research Pub Date : 2023-07-28 DOI: 10.1002/pssa.202300213
M. Verma, S. Routray, G. S. Sahoo, G. P. Mishra
{"title":"Optimization of a‐Si Thin‐Film Solar‐Cell Performance with Passivation and c‐Si Cap Layer","authors":"M. Verma, S. Routray, G. S. Sahoo, G. P. Mishra","doi":"10.1002/pssa.202300213","DOIUrl":"https://doi.org/10.1002/pssa.202300213","url":null,"abstract":"A modified design of the a‐Si thin‐film solar cell (TFSC) is presented. The c‐Si cap layer is introduced to increase the photon absorption and hence the enhanced photo carriers increase the overall short‐circuit current. Whereas, the highly doped a‐Si passivation layer reduces the minority carrier flow and recombination at the rear side of the cell, and therefore the passivation layer is used to improve the open‐circuit voltage ( V oc ). The performance optimization and investigation of the cell characteristic is executed using the numerical simulation methodology. To further enhance the cell efficiency, the thickness and doping concentration of the c‐Si cap and a‐Si passivation layer are optimized. The improvement in absorption and passivation quality of the cell leads to the enhancement of 10.54 % in short‐circuit current density and 71.51 % improvement in the V oc , respectively. The designed a‐Si TFSC absorbs the incoming solar spectrum from 300 to 850 nm of wavelength and rest of the spectrum is transmitted. The external and internal quantum efficiency of the cell is well over 95 % . The optimized efficiency of 15.33 % is obtained for the designed cap layered a‐Si passivated cell in AM1.5 G environment using ray‐tracing methodology.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"633 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78980824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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