Yuhei Seki, Rintaro Kurashima, Minami Yoshihara, Y. Hoshino
{"title":"Optimization of Activation Annealing Condition for Boron‐Implanted Diamond","authors":"Yuhei Seki, Rintaro Kurashima, Minami Yoshihara, Y. Hoshino","doi":"10.1002/pssa.202300522","DOIUrl":"https://doi.org/10.1002/pssa.202300522","url":null,"abstract":"Impurity activation of dopants implanted in diamond is one of the crucial issues for device application of diamond. Boron impurity atoms are introduced in diamond, which expectedly act as acceptors, by ion implantation technique, and are investigated the optimum annealing time for the effective dopant activation. The impurity doping is performed by boron ion implantation at multiple incident energies to obtain a uniform dopant concentration from the surface to 350 nm depth followed by activation annealing at 1300 °C for 5–240 min. The electrical properties of specific resistance, carrier concentration, and conduction type are analyzed as a function of temperature from room temperature to 873 K. The estimated ionization energy is strongly dependent on the annealing time and asymptotically approaches to 0.3 eV, which is theoretically expected ionization energy of acceptor boron, with increasing annealing time. A shorter annealing time ( ≲ 120 min ) $leq 120 text{min} left.right)$ does not sufficiently recover radiation damages caused by ion implantation forming deep levels, which act as irregular conduction. It is consequently found that an optimum window of annealing time for effective dopant activation and suggested carrier transport mechanisms depending on the annealing time.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"208 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77898581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Mandal, Ashish Kumar Yadav, S. K. Pandey, S. Chakrabarti
{"title":"Fabrication of 1T VS2 Electrode‐Based In‐Plane Micro‐Supercapacitor Using a Cost‐Effective Mask‐Assisted Printing Technique","authors":"A. Mandal, Ashish Kumar Yadav, S. K. Pandey, S. Chakrabarti","doi":"10.1002/pssa.202300274","DOIUrl":"https://doi.org/10.1002/pssa.202300274","url":null,"abstract":"Vanadium disulfide (VS2) is an important member of the transition‐metal dichalcogenides (TMDs) family, which offers high conductivity. In nature, it can exist in two phases, i.e., 1T and 2H. Herein, the metallic 1T VS2‐based in‐plane micro‐supercapacitor (MSC) is fabricated by a facile‐mask‐assisted printing technique. Initially, the 1T VS2 nanosheets are synthesized using a simple one‐pot hydrothermal route. The material characterizations have claimed the formation of a 1T phase and the density of states (DOS) reveal that the 1T phase of VS2 is metallic in nature. After experimental and theoretical investigations of synthesized nanosheets, a VS2 electrode‐based in‐plane MSC is fabricated using a simple mask‐assisted printing technique. The fabricated device demonstrates excellent capacitance retention of 97.6% after 1000 cycles of cyclic voltammetry measurement at a 100 mV s−1 scan rate. The device also shows an excellent areal capacitance of 212.7 mF cm−2 and a high areal energy density of 10.63 μWh cm−2 at a high‐power density of 4.45 mW cm−2. This low‐cost and simple fabrication process can produce high‐performance in‐plane MSC devices.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"63 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84066378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Investigation of Temperature‐Activated Charge‐Carrier Dynamics and Dielectric Relaxation in Fe, Cu–Doped CeO2","authors":"M. Vishwakarma, P. Jain","doi":"10.1002/pssa.202300349","DOIUrl":"https://doi.org/10.1002/pssa.202300349","url":null,"abstract":"Cerium oxide (CeO2) is a material with unique dielectric properties that make it a promising candidate for various applications. High electrical resistance and a wide bandgap of pristine CeO2 limit its applicability in photovoltaics and photo‐electrocatalysis. CeO2 is co‐doped with transition metals (Fe+2/Fe+3 and Cu+2), which reduces its optical bandgap energy and electrical resistance. This study aims to investigate the dielectric relaxation behavior and charge‐carrier dynamics of Fe, Cu–CeO2. The enhanced charge‐carrier dynamics in the Fe, Cu–doped CeO2 compared to pristine CeO2 are reported. Using temperature‐dependent electrochemical impedance spectroscopy (TD‐EIS), the dielectric relaxation and carrier dynamics in pristine CeO2 and Fe, Cu–doped CeO2 in the temperature range 313–473 K along with the modulus spectroscopy are investigated. It is observed that Z′ values reduced with the temperature, thus showing the negative temperature coefficient of resistance in the frequency range 6.28–1.005 × 105 radians s−1. Furthermore, a correlated study of –Z″ and M″ shows the charge‐carrier relaxation behavior changes from ideal Debye type to non‐Debye type with temperature rise in Fe, Cu–doped CeO2.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"34 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86862954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Organic Transistor‐based Chemical Sensors for Real‐Sample Analysis","authors":"Yui Sasaki, T. Minami","doi":"10.1002/pssa.202300469","DOIUrl":"https://doi.org/10.1002/pssa.202300469","url":null,"abstract":"An organic field‐effect transistor (OFET) is the representative amplification device showing a switching profile by applying a gate voltage, which indicates the potential as a chemical sensor device in combination with appropriate molecular recognition materials. On the other hand, the realization of OFET‐based chemical sensors for real‐sample analysis has been limited owing to the instability of organic semiconductive materials under ambient conditions and the difficulty of the designs of molecular recognition materials. Herein, this Review describes methodologies and actual approaches to maximize the potential of the OFETs as chemical sensor platforms based on fusion technologies between organic electronics and molecular recognition chemistry.This article is protected by copyright. All rights reserved.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"269 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76890931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kota Mori, Y. Kurokawa, Sai Kiran Mavileti, S. Pandey
{"title":"Design, Synthesis and Photophysical Characterization of Multifunctional Far‐red Squaraine Dyes for Dye‐Sensitized Solar Cells","authors":"Kota Mori, Y. Kurokawa, Sai Kiran Mavileti, S. Pandey","doi":"10.1002/pssa.202300254","DOIUrl":"https://doi.org/10.1002/pssa.202300254","url":null,"abstract":"Novel far‐red sensitive symmetrical squaraine dyes aiming towards multifunctional properties such as control of dye aggregation, promotion of molecular self‐assembly and introduction of electrolyte function by alkyl chain terminal modification were designed. Newly designed dye without terminal modification as reference (SQ‐5) along with iodine (SQ‐77) and imidazole (SQ‐79) alkyl terminal‐modified dyes were successfully synthesized, characterized, and subjected to detailed photophysical investigations. Iodine terminal modification (SQ‐77) led to enhanced molar extinction coefficient, dye aggregation, dye loading and binding strength on the TiO2 surface, which was found by just the opposite after the imidazole (SQ‐79) terminal modification. Demonstration of nearly similar photovoltaic performance by SQ‐77 and SQ‐79 in the absence of iodine and chenodeoxycholic acid validates their multi‐functional role as electrolyte function and dye aggregation prevention, respectively, in addition to their main role as photosensitizer. DSSCs fabricated with SQ‐5 as a sensitizer showed efficient far‐red to NIR photo‐sensitization and photon harvesting with short‐circuit current density, open‐circuit voltage and fill factor of 11.98 mA/cm2, 0.61 V, and 0.57, respectively leading to a photoconversion efficiency of 4.2 % under simulated solar irradiation.This article is protected by copyright. All rights reserved.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84392682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Karuppiah Kathiresan, N. R. Ramanujam, Karuppiah Poovendran, S. Taya
{"title":"A Theoretical Approach for Detecting the Chikungunya Virus Based on 1D Photonic Crystals","authors":"Karuppiah Kathiresan, N. R. Ramanujam, Karuppiah Poovendran, S. Taya","doi":"10.1002/pssa.202300362","DOIUrl":"https://doi.org/10.1002/pssa.202300362","url":null,"abstract":"In the current study, it is aimed at using defective 1D photonic crystals (PCs) to detect the chikungunya virus in various healthy and diseased blood samples composed of plasma, platelets, red blood cells, and uric acid. The proposed PC structure has 14 periods and consists of repeating SiC and SiO2 layers with a central cavity layer. When blood samples are injected into the cavity layer, the transmittance spectrum is examined theoretically by using a transfer matrix approach to determine how the wavelength of the defect mode changes. The cavity layer is 540 and 648 nm thick, and the work is carried out at different angles of incidence. The performance of the sensor is quantified by computing the sensitivity, figure of merit, quality factor, and limit of detection values of the sensor for various blood samples. The maximum sensitivity is 1205.5 nm RIU−1 and detection limit of the order is 10−6 in this proposed work. A lower value of sensor resolution of 0.01218 is also achieved. Such a high‐performance sensor is suitable for biosensing applications with better sensing capabilities.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74574075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fei Liu, Guangwei Wang, Zixiang Huang, Juan Tian, Deliang Wang
{"title":"Enhanced Performance of CdTe Solar Cells with Sb2Se3 Back Contacts","authors":"Fei Liu, Guangwei Wang, Zixiang Huang, Juan Tian, Deliang Wang","doi":"10.1002/pssa.202300426","DOIUrl":"https://doi.org/10.1002/pssa.202300426","url":null,"abstract":"The barrier at CdTe/metal interface severely limits the efficiency of CdTe photovoltaic devices. Herein, the effectiveness of a thermally evaporated Sb2Se3 buffer layer as a back contact in CdTe solar cells is investigated, revealing a significant enhancement in device performance. Through optimization of Sb2Se3 thickness, a remarkable increase in the open‐circuit voltage (VOC) to 804 mV is achieved, leading to a substantial efficiency improvement of 12.84% when compared to the Au‐only back contact device. X‐ray photoelectron spectroscopy (XPS) reveals a well‐matched energy band alignment at CdTe/Sb2Se3 interface, confirming favorable conditions for hole transport. To further enhance the device performance, Cu doping is implemented in the Sb2Se3 film, resulting in additional improvements to the VOC and fill factor (FF) of the Cu‐doped configuration to 819 mV and 72.35%, respectively, while also enhancing the overall efficiency to 14.3%.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76649034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Kneissl, J. Christen, A. Hoffmann, B. Monemar, T. Wernicke, Ulrich T. Schwarz, Å. Haglund, M. Meneghini
{"title":"Nitride Semiconductors","authors":"M. Kneissl, J. Christen, A. Hoffmann, B. Monemar, T. Wernicke, Ulrich T. Schwarz, Å. Haglund, M. Meneghini","doi":"10.1002/pssa.202300484","DOIUrl":"https://doi.org/10.1002/pssa.202300484","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72517085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shengxian Wei, Fen E Hu, Li-ping Deng, Bao Yue, Yiming Cao, Xijia He, Yuanlei Zhang, Yanru Kang, K. Xu, Zhe Li
{"title":"Effect of Cu Doping on Phase Transition, Thermal Strain, and Thermal Expansion Property in Polycrystalline Ni50Mn23−xCuxGa27 Alloys","authors":"Shengxian Wei, Fen E Hu, Li-ping Deng, Bao Yue, Yiming Cao, Xijia He, Yuanlei Zhang, Yanru Kang, K. Xu, Zhe Li","doi":"10.1002/pssa.202300348","DOIUrl":"https://doi.org/10.1002/pssa.202300348","url":null,"abstract":"The influence of Cu doping on phase transition, thermal strain, and thermal expansion property of polycrystalline Ni50Mn23−xCuxGa27(x = 1, 3, 5, 6 and 7) alloys is investigated. The results show that with increasing Cu concentration, martensitic transformation gradually gets close to Curie transition. A magnetostructural transition (MST) is observed in samples with x = 6 and 7. Such MST can enhance magnitude of transformation strain. Besides, Ni50Mn23−xCuxGa27 alloys possess an isotropic, recoverable, and thermally stable thermal strain. Excitedly, Cu doping can effectively tune the phase transition, thermal strain, and thermal expansion properties of Ni50Mn23−xCuxGa27 alloys. Adjustable coefficients of thermal expansion from positive to negative are obtained by Cu‐doped Ni50Mn23−xCuxGa27 alloys. The average linear expansion coefficient (α) between −140.44 and −207.70 ppm K−1 is observed in samples with x = 6 and 7 for a narrow temperature span of 11–14 K. When the temperature span is about 72 K (x = 6) and 73 K (x = 7), which is the largest temperature span observed in Ni–Mn–Ga‐based alloys recently, the α values decrease to about −36 ppm K−1. These findings are beneficial for manipulating the thermal expansion property of Ni–Mn–Ga–Cu alloys and their multifunctional applications.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89788897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Comparative Study on Thermal and Laser Sintering of Silver Nanocubes and Silver Nanoplates","authors":"Zhu Hui, X. Liu","doi":"10.1002/pssa.202200889","DOIUrl":"https://doi.org/10.1002/pssa.202200889","url":null,"abstract":"Compared with silver nanowires and silver nanospheres, silver nanocubes and silver nanoplates with larger curvature structures like sharp vertices and edges have great potential in optical applications. In general, the controllable joining of silver nanomaterials has become an effective way to change the electrical and optical properties of silver nanomaterials in recent years. However, urgent research on the controllable joining of silver nanocubes or silver nanocubes is still rarely reported. After being thermal treated at 250 °C for 8 min, a good joining among silver nanocubes can be obtained without significant damage to the cubic structure. For laser sintering, with the increase of laser energy input, silver nanocubes gradually transform to spherical particles. Joining among few particles can be observed when silver nanocubes are scanned by 5 W of laser at 1.0 mm s−1. Obvious joining among silver nanocubes can be obtained by thermal treating at 300 °C for 5 min and laser scanning at 7 W at 0.2 mm s−1. Thermal heating is more suitable for forming different degrees of connection between silver nanocubes or between silver nanocubes, while laser treatment is suitable for changing the shape of silver nanocubes or silver nanocubes without obvious connection.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90949569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}