Physica status solidi (A): Applied research最新文献_第3页

Enhanced Dielectric and Mechanical Performances of the (La + Nb) Codoped TiO2/Silicone Rubber Composites (La + Nb)共掺TiO2/硅橡胶复合材料的介电性能和力学性能

Physica status solidi (A): Applied research Pub Date : 2023-08-25 DOI: 10.1002/pssa.202300462

Y. Zeng, Lu Tang, Guijin Li

引用次数: 0

CsSn0.5Ge0.5I3‐Based Lead‐Free Highly Stable Perovskite Solar Cell: Numerical Modeling for Estimating Performance Ceiling CsSn0.5Ge0.5I3基无铅高稳定钙钛矿太阳能电池:估计性能上限的数值模拟

Physica status solidi (A): Applied research Pub Date : 2023-08-25 DOI: 10.1002/pssa.202300449

M. Sujit, R. Prabu, R. Ramachandran, Atul Kumar

{"title":"CsSn0.5Ge0.5I3‐Based Lead‐Free Highly Stable Perovskite Solar Cell: Numerical Modeling for Estimating Performance Ceiling","authors":"M. Sujit, R. Prabu, R. Ramachandran, Atul Kumar","doi":"10.1002/pssa.202300449","DOIUrl":"https://doi.org/10.1002/pssa.202300449","url":null,"abstract":"CsSn0.5Ge0.5I3 perovskite is reportedly highly stable in ambient open air, lead free, and has excellent optoelectrical properties. An inverted p–i–n solar cell device based on this mixed SnGe perovskite utilizing the reported optical and electrical characteristics of the CsSn0.5Ge0.5I3 is simulated. This theoretical device under various recombination regimes to explore the performance ceiling of CsSn0.5Ge0.5I3 is put. An optimized configuration of CsSn0.5Ge0.5I3‐based perovskite solar cell shows an efficiency of 29% under the impact of only intrinsic recombination losses such as radiative (with radiative recombination coefficient of 10−11) and Auger recombination (recombination coefficient of 10−27). When extrinsic factors are considered, such as resistance losses (series resistance as high as 2 Ω cm2 and shunt resistance as low as 1000 Ω cm2), efficiency decreases to 27.5%. The efficiency is 20% when trap‐assisted Shockley–Read–Hall recombination is considered with voltage loss (V Loss) of 0.5 V. Similarly, V Loss = 0.6 V in V OC restricts device efficiency to 15%. Finally, an efficiency waterfall chart summarizes the CsSn0.5Ge0.5I3, efficiency under different extrinsic losses, and the performance loss analysis, providing an optimal design. The results summarized here are expected to be helpful and prompt experimentalists to fabricate this stable lead‐free perovskite solar cell.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"38 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80689172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Understanding Crystal Spatial Symmetry of Sm/Mg Heterovalent‐Doped BST–BNT Ceramics: An Effect Mechanism for Electrical Properties Sm/Mg杂价掺杂BST-BNT陶瓷晶体空间对称性的研究:电性能的影响机制

Physica status solidi (A): Applied research Pub Date : 2023-08-24 DOI: 10.1002/pssa.202300411

Lijia Cao, Mengshi Zeng, Xue Chen, Tiankun Liu

{"title":"Understanding Crystal Spatial Symmetry of Sm/Mg Heterovalent‐Doped BST–BNT Ceramics: An Effect Mechanism for Electrical Properties","authors":"Lijia Cao, Mengshi Zeng, Xue Chen, Tiankun Liu","doi":"10.1002/pssa.202300411","DOIUrl":"https://doi.org/10.1002/pssa.202300411","url":null,"abstract":"The effect mechanism of lattice distortion caused by heterovalent rare‐earth and alkaline‐earth ions co‐doping in the electrical properties of piezo‐ceramics is generally concerning. Herein, the Sm2O3/MgO co‐doped 0.65(Ba0.96Sr0.04TiO3)–0.35(Bi0.50Na0.50TiO3) (BST–BNT: x(Sm, Mg)) (0 ≤ x ≤ 0.25 wt%) ceramics are prepared by Pechini sol–gel method. The reversibility transition from the tetragonal P4/mmm relaxation paraelectric phase to the tetragonal P4mm relaxation ferroelectric phase confirms the doping‐modulated piezoelectric constants’ response to the spatial symmetry. Excessive Sm3+ and Mg2+ in the interstitial lattice inhibit the Jahn–Teller effect of distortion in the crystal spatial symmetry. The restored P4/mmm spatial symmetry of BST–BNT: x(Sm, Mg) (x = 0.15 wt%) ceramics contributes to the large electric‐induced strain, increased Curie temperature, and the stabilized frequency dependence of the Curie temperature (TC [1 MHz] = 167 °C, εr [1 MHz] = 2151.92, d33 = 43 pC N−1, Smax/Emax = 535.22 pm V−1). The samples with large electric‐induced strain and good temperature stability of electrical properties can be applied in the heat dissipation actuators.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"219 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75313237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications 用于400°C高温应用的氧化镓异质结二极管

Physica status solidi (A): Applied research Pub Date : 2023-08-21 DOI: 10.1002/pssa.202300535

S. H. Sohel, Ramchandra M. Kotecha, Imran S. Khan, K. Heinselman, S. Narumanchi, M. Brooks Tellekamp, A. Zakutayev

{"title":"Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications","authors":"S. H. Sohel, Ramchandra M. Kotecha, Imran S. Khan, K. Heinselman, S. Narumanchi, M. Brooks Tellekamp, A. Zakutayev","doi":"10.1002/pssa.202300535","DOIUrl":"https://doi.org/10.1002/pssa.202300535","url":null,"abstract":"β‐Ga2O3‐based semiconductor devices are expected to have significantly improved high‐power and high‐temperature performance due to its ultrawide bandgap of close to 5 eV. However, the high‐temperature operation of these ultrawide‐bandgap devices is usually limited by the relatively low 1–2 eV built‐in potential at the Schottky barrier with most high‐work‐function metals. Herein, heterojunction p‐NiO/n‐β‐Ga2O3 diodes fabrication and optimization for high‐temperature device applications are reported, demonstrating a current rectification ratio (ION/IOFF) of more than 106 at 410 °C. The NiO heterojunction diode can achieve higher turn‐on (VON) voltage and lower reverse leakage current compared to the Ni‐based Schottky diode fabricated on the same single‐crystal β‐Ga2O3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built‐in potential and additional band offset. These results suggest that heterojunction p–n diodes based on β‐Ga2O3 can significantly improve high‐temperature electronic device and sensor performance.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"45 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84640794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Coating Silver Tree‐like Fractal Structure with Silica Layer for Inhibiting Chemical Reactions of Analytes in Surface‐Enhanced Raman Scattering 用硅层包裹银树状分形结构抑制分析物表面增强拉曼散射中的化学反应

Physica status solidi (A): Applied research Pub Date : 2023-08-19 DOI: 10.1002/pssa.202300085

Hiroya Watanabe, Yurin Hishii, Kanna Kishimoto, Kohei Nogami, Qingyuan Ma, Tomoya Niki, Tomoki Kotani, T. Kiwa, Satoru Shoji, T. Ohkubo, J. Kano, N. Takeyasu

{"title":"Coating Silver Tree‐like Fractal Structure with Silica Layer for Inhibiting Chemical Reactions of Analytes in Surface‐Enhanced Raman Scattering","authors":"Hiroya Watanabe, Yurin Hishii, Kanna Kishimoto, Kohei Nogami, Qingyuan Ma, Tomoya Niki, Tomoki Kotani, T. Kiwa, Satoru Shoji, T. Ohkubo, J. Kano, N. Takeyasu","doi":"10.1002/pssa.202300085","DOIUrl":"https://doi.org/10.1002/pssa.202300085","url":null,"abstract":"Silica coating is performed onto silver tree‐like fractal structures, which are self‐grown in a solution, through a wet process using tetraethyl orthosilicate. Surface‐enhanced Raman scattering (SERS) of para‐aminothiophenol (p‐ATP) is measured on the silver tree‐like fractal structures with/without silica layer at the excitation wavelength of 532 nm. p‐ATP is chemically transformed into dimercaptoazobenzene (DMAB) on the non‐coated silver tree‐like fractal structures, where DMAB peaks are clearly observed, during the SERS measurements. The DMAB peaks decrease/disappear on the silica‐coated ones although the p‐ATP peaks are observed. In the results, it is indicated that the chemical transformation is inhibited on the silica‐coated ones. The sensitivity is decreased by half compared to the non‐coated silver tree‐like fractal structures, where the lower detection limit is estimated to be ≈2 × 10−5 mol L−1 for p‐ATP. The silica coating is advantageous for inhibiting chemical transformations of analytes, enabling identification/estimation of chemicals in unknown sample with SERS similarly to conventional Raman spectroscopy.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"202 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79694101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Annealing on Resistive Switching Properties of Glancing Angle Deposition‐Assisted WO3 Thin Films 退火对掠角沉积辅助WO3薄膜电阻开关性能的影响

Physica status solidi (A): Applied research Pub Date : 2023-08-19 DOI: 10.1002/pssa.202300358

Shiva Lamichhane, Savita Sharma, M. Tomar, A. Chowdhuri

{"title":"Effect of Annealing on Resistive Switching Properties of Glancing Angle Deposition‐Assisted WO3 Thin Films","authors":"Shiva Lamichhane, Savita Sharma, M. Tomar, A. Chowdhuri","doi":"10.1002/pssa.202300358","DOIUrl":"https://doi.org/10.1002/pssa.202300358","url":null,"abstract":"Herein, the impact of postdeposition annealing on resistive switching behavior of radio frequency magnetron sputtered WO3 thin films is reported. Films are deposited under glancing angle deposition (GLAD) configuration of sputtering at varying GLAD angle from 65° to 80°. Structure transition from monoclinic to orthorhombic phase in deposited WO3 films is perceived after ex situ annealing at temperature of 400 °C. Resistive switching properties show shift from bipolar to unipolar switching on postdeposition annealing. WO3 films show unipolar switching behavior after ex situ annealing for all prepared samples. The value of resistance in high resistance state is lowered after ex situ heating treatment and interestingly switching voltage also reduces to 3 V from 7 V after annealing treatment. The ratio of high to low resistance state for annealed WO3 film fabricated at 70° GLAD angle is achieved to be maximum (≈219). A detailed charge transport mechanism shows that ohmic behavior is dominant current conduction mechanism at lower applied voltage, while space charge limited current and Child's law are dominant at higher applied voltages. Obtained results encourage utilization of prepared WO3 thin films toward a wide variety of applications in optoelectronics, microelectronics, and environmental engineering along with advanced electronics such as resistive memory devices.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1960 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87774973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evidence for charging and discharging of MoS2 and WS2 on mica by intercalating molecularly thin liquid layers 通过嵌入分子薄的液体层，云母上的MoS2和WS2充放电的证据

Physica status solidi (A): Applied research Pub Date : 2023-08-15 DOI: 10.1002/pssa.202300302

H. Li, S. Kovalchuk, A. Kumar, D. Liang, B. Frank, H. Lin, N. Severin, K. Bolotin, S. Kirstein, J. P. Rabe

{"title":"Evidence for charging and discharging of MoS2 and WS2 on mica by intercalating molecularly thin liquid layers","authors":"H. Li, S. Kovalchuk, A. Kumar, D. Liang, B. Frank, H. Lin, N. Severin, K. Bolotin, S. Kirstein, J. P. Rabe","doi":"10.1002/pssa.202300302","DOIUrl":"https://doi.org/10.1002/pssa.202300302","url":null,"abstract":"Transition metal dichalcogenides (TMDC) are often mechanically exfoliated on mica and examined under ambient conditions. It is known that above a certain relative humidity, a molecularly thin layer of water intercalates between the mica and the TMDC. Here, we investigate the effect of molecularly thin liquid layers on the optical spectra of MoS2 and WS2 exfoliated on dry mica and exposed to the vapors of water, ethanol, and tetrahydrofuran (THF). Photoluminescence (PL) and differential reflectance (ΔR/R) spectra on the TMDCs on dry mica show dominant trion emission due to n‐doping. Intercalation of water removes charge doping and results in purely neutral exciton emission, while an ethanol layer, which can be reversibly exchanged with water, does not completely suppress charge. Similarly, THF intercalates between TMDC and mica, as shown by atomic force microscopy, but it does not suppress the charging of mica. In MoS2 bi‐ and trilayers, an intercalated water layer leads to a near doubling of the intensity of the indirect band transition. The described charging/discharging of TMDCs by molecular thin liquid layers could provide important clues to better control the optical properties of TMDCs under environmental conditions.This article is protected by copyright. All rights reserved.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"157 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86331444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On the application potential of chemically tailored metal oxide and higher chalcogenide nanoparticles for nanoscale resistive switching devices 化学定制金属氧化物和硫族化合物纳米颗粒在纳米级阻性开关器件中的应用潜力

Physica status solidi (A): Applied research Pub Date : 2023-08-13 DOI: 10.1002/pssa.202300456

Anne Frommelius, Thorsten Ohlerth, M. Noyong, U. Simon

引用次数: 0

Facile Fabrication and Characterization of Oriented and Multilayer Thin Films of Solution Processable Conjugated Polymer 溶液可加工共轭聚合物取向多层薄膜的制备与表征

Physica status solidi (A): Applied research Pub Date : 2023-08-13 DOI: 10.1002/pssa.202300194

Shubham Sharma, Shuichi Nagamatsu, Vipul Singh, S. Pandey

{"title":"Facile Fabrication and Characterization of Oriented and Multilayer Thin Films of Solution Processable Conjugated Polymer","authors":"Shubham Sharma, Shuichi Nagamatsu, Vipul Singh, S. Pandey","doi":"10.1002/pssa.202300194","DOIUrl":"https://doi.org/10.1002/pssa.202300194","url":null,"abstract":"Fabrication of multilayer thin films of solution‐processable organic semiconductors has great potential in organic electronics but adopting existing thin film techniques to attain this is highly cumbersome. In this work, a unique unidirectional floating film transfer method (UFTM) has been utilized, which allows the facile fabrication of large area and oriented thin films of conjugated polymers. Using this method, we have successfully fabricated and characterized multilayer and oriented thin films of regioregular poly(3‐hexylthiophene) without having any adverse effect on the underlying layers. Optical characterizations revealed that fabricated thin films are anisotropic with a dichroic ratio of 2.2 having a single layer thickness of 14.5 nm. X‐ray diffraction results demonstrated uniformity in the crystallinity of the multilayered thin film with comparable crystallite size and inter‐planar spacing with purely edge‐on molecular orientation. The organic field effect transistor fabricated using multilayer thin films also exhibits a uniform and saturated charge carrier mobility of about 0.1 cm2V‐1s‐1.This article is protected by copyright. All rights reserved.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"392 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74301181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Fabrication and Characterization of Bifacial Dye‐Sensitized Solar Cells Utilizing Indoline Dye with Iodine and Cobalt‐based Redox Electrolytes 利用碘和钴基氧化还原电解质的吲哚染料制备和表征双面染料敏化太阳能电池

Physica status solidi (A): Applied research Pub Date : 2023-08-12 DOI: 10.1002/pssa.202300241

S. Shaban, Safalmani Pradhan, S. Pandey

{"title":"Fabrication and Characterization of Bifacial Dye‐Sensitized Solar Cells Utilizing Indoline Dye with Iodine and Cobalt‐based Redox Electrolytes","authors":"S. Shaban, Safalmani Pradhan, S. Pandey","doi":"10.1002/pssa.202300241","DOIUrl":"https://doi.org/10.1002/pssa.202300241","url":null,"abstract":"Bifacial solar cells (BFSCs) are gaining popularity due to their compactness, space‐saving property, and higher photoconversion efficiency (PCE) than mono‐facial solar cells. Bifacial dye‐sensitized solar cells (BF‐DSSCs) are fabricated and characterized utilizing D‐205 as a dye‐sensitizer in combination with I‐/I3\u0000‐ and Co2+/Co3+ redox electrolytes. BF‐DSSCs using iodine‐based electrolytes demonstrate a cumulative PCE and bifaciality factor (BFF) of 13.05% and 85%, respectively. The hampered PCE under back‐side light illumination is attributed to the absorption of photons by the electrolyte itself. Contrary to this, BF‐DSSCs fabricated using cobalt‐complex‐based redox electrolyte exhibits an exceptionally high BFF of nearly 100% with a PCE of 4.77% and 4.75% under the front and rear light illumination, respectively. Although the open circuit voltage (Voc) of the BF‐DSSCs fabricated using cobalt electrolyte (with deeper redox potential) is slightly higher than that of BF‐DSSCs fabricated using iodine electrolyte, their cumulative PCE (9.52%) is much lower than that of iodine‐based device counterparts (13.05%). This decrease in PCE is attributed to the relatively fast charge recombination in the cobalt electrolyte‐based BF‐DSSCs.This article is protected by copyright. All rights reserved.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"56 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86103492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0