Physica status solidi (A): Applied research最新文献_第2页

AlGaN‐Based Solar‐Blind Ultraviolet Detector with a Response Wavelength of 217 nm 响应波长为217 nm的AlGaN基太阳盲紫外探测器

Physica status solidi (A): Applied research Pub Date : 2023-09-02 DOI: 10.1002/pssa.202300231

Ran Zhang, Gang Zheng, Bin Cheng, Junchun bai, Xianqi Lin, Kai Xiao, Yukun Wang, Qianyu Hou, Wenhong Sun

{"title":"AlGaN‐Based Solar‐Blind Ultraviolet Detector with a Response Wavelength of 217 nm","authors":"Ran Zhang, Gang Zheng, Bin Cheng, Junchun bai, Xianqi Lin, Kai Xiao, Yukun Wang, Qianyu Hou, Wenhong Sun","doi":"10.1002/pssa.202300231","DOIUrl":"https://doi.org/10.1002/pssa.202300231","url":null,"abstract":"The research of the high Al(x = 0.75) component has always been the focus of the AlGaN solar‐blind ultraviolet (UV) detector. However, due to the lattice and thermal mismatch between the AlGaN and the underlying substrate under existing mainstream heteroepitaxial growth methods, the large density of defects, e.g., point defects, screw dislocations, and edge dislocations, has hindered the performances of AlGaN‐based solar‐blind UV photodetectors. A short superlattice polarization‐induced P‐type doping growth technique is used to fabricate a high‐performance AlGaN‐based back‐illuminated solar‐blind UV p‐i‐n photodetector (PD) fabricated on sapphire substrates. The back‐illuminated AlGaN UV‐PD shows a high external quantum efficiency of 70.2%. The peak responsivity (R) reaches 123 mA W−1 at −5 V with a wavelength of 217 nm. Meanwhile, the dark current density is 2.21 × 10−8 A cm−2. Additionally, the UV/visible rejection ratio for the detectors exceeds four orders of magnitude, and the detectivity (D*) is calculated to be 6.7 × 1012 cm Hz1/2 W−1. The device performance parameters can be attributed to the quality of the epilayer and heterojunctions. This technology provides new ideas for nitride semiconductor materials, further bringing a breakthrough in a wide‐bandgap electronics device.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78864299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of Fluence and Pulse Number on Laser‐Cleaning of Atmospheric Pressure Plasma Jet Etched Optical Glasses 通量和脉冲数对常压等离子体射流蚀刻光学玻璃激光清洗的影响

Physica status solidi (A): Applied research Pub Date : 2023-09-02 DOI: 10.1002/pssa.202300485

Robert Heinke, Thomas Arnold, M. Ehrhardt, P. Lorenz, K. Zimmer

{"title":"Influence of Fluence and Pulse Number on Laser‐Cleaning of Atmospheric Pressure Plasma Jet Etched Optical Glasses","authors":"Robert Heinke, Thomas Arnold, M. Ehrhardt, P. Lorenz, K. Zimmer","doi":"10.1002/pssa.202300485","DOIUrl":"https://doi.org/10.1002/pssa.202300485","url":null,"abstract":"The use of beam‐based technologies to process optical elements with nano‐scale precision enables the fabrication of freeform surfaces. Especially, atmospheric pressure plasma jets (APPJ) have desirable properties such as atmospheric pressure machining, dry processing and direct writing capabilities. However, the presence of metal oxides in optical glasses leads to the formation of non‐volatile reaction products during APPJ etching with fluorine‐containing gas mixtures, forming a residual layer that increases surface roughness and alters etching behavior. To prevent the formation of the residual layer the APPJ process is combined with laser‐cleaning. For a possible future in‐situ cleaning of the residual layer during the plasma process, laser parameter ranges need to be found to remove the residual layer without damaging the glass surface. Therefore, planar etchings are performed by APPJ on N‐BK7 and Zerodur and the etched planes are subsequently laser‐irradiated with varying pulse numbers and fluences. The processed samples are then examined by SEM. For both N‐BK7 and Zerodur, a parameter range is identified that results in clean surfaces. The best machining results are achieved with 2 ‐ 16 pulses and laser fluences of 0.6 ‐ 1.2 J cm‐2 for N‐BK7 and 0.56 ‐ 0.7 J cm‐2 for Zerodur.This article is protected by copyright. All rights reserved.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"34 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85857991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis and Characterization of Solid‐Solution ReS2−xTex (0 ≤ x ≤ 1) Nanosheets 固溶ReS2 - xTex(0≤x≤1)纳米片的合成与表征

Physica status solidi (A): Applied research Pub Date : 2023-09-02 DOI: 10.1002/pssa.202300337

Shutaro Kawawa, Keitaro Tezuka, Yue Jin Shan

{"title":"Synthesis and Characterization of Solid‐Solution ReS2−xTex (0 ≤ x ≤ 1) Nanosheets","authors":"Shutaro Kawawa, Keitaro Tezuka, Yue Jin Shan","doi":"10.1002/pssa.202300337","DOIUrl":"https://doi.org/10.1002/pssa.202300337","url":null,"abstract":"ReS2 nanosheets have recently attracted attention because of their excellent electrocatalytic properties. It has also been reported that the electrocatalytic activity of solid‐solution ReS2−xSex nanosheets is improved by tuning the bandgap structure through a solid solution with Se. However, Se has application limitations in that it is highly toxic. Thus, herein, solid‐solution ReS2−xTex nanosheets are focused. Solid‐solution ReS2−xTex (x = 0, 0.5, and 1.0) bulk is synthesized by solid‐state reactions. The optical bandgaps of ReS2, ReS1.5Te0.5, and ReSTe are measured to be 1.29, 1.07, and 0.99 eV, respectively. Solid‐solution ReS2−xTex (x = 0, 0.5, and 1.0) nanosheets are obtained by the ultrasonic exfoliation and Li‐intercalation exfoliation of the ReS2−xTex bulks. The typical lateral sizes and thicknesses of the ReS2, ReS1.5Te0.5, and ReSTe nanosheets by ultrasonic exfoliation are 200 and 6 nm, 160 and 3 nm, and 600 and 2 nm, respectively. The typical lateral sizes and thicknesses of ReS2, ReS1.5Te0.5, and ReSTe nanosheets using the Li‐intercalation exfoliation method are 150 and 2 nm, 100 and 1 nm, and 100 and 1 nm, respectively. In the nanosheets obtained from both exfoliation methods, the lateral size is not composition‐dependent, and the thickness decreases with increasing x in ReS2−xTex.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91276271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Quality 量化Al沉积方法对Al2O3/Si界面质量的影响

Physica status solidi (A): Applied research Pub Date : 2023-08-31 DOI: 10.1002/pssa.202200653

I. Mack, Kawa Rosta, U. Quliyeva, J. Ott, T. Pasanen, V. Vähänissi, Zahra Sadat Jahanshah Rad, J. Lehtiö, P. Laukkanen, C. Soldano, H. Savin

{"title":"Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Quality","authors":"I. Mack, Kawa Rosta, U. Quliyeva, J. Ott, T. Pasanen, V. Vähänissi, Zahra Sadat Jahanshah Rad, J. Lehtiö, P. Laukkanen, C. Soldano, H. Savin","doi":"10.1002/pssa.202200653","DOIUrl":"https://doi.org/10.1002/pssa.202200653","url":null,"abstract":"Oxide–semiconductor interface quality has often a direct impact on the electrical properties of devices and on their performance. Traditionally, the properties are characterized through metal–oxide–semiconductor (MOS) structures by depositing a metal layer and measuring the capacitance–voltage (C–V) characteristics. However, metal deposition process itself may have an impact on the oxide and the oxide–semiconductor interface. The impact of magnetron sputtering, e‐beam evaporation, and thermal evaporation on an A l 2 O 3 / S i interface is studied, where atomic layer deposited (ALD) A l 2 O 3 is used, by MOS C–V and corona oxide characterization of semiconductors (COCOS) measurements. The latter allows characterization of the interface also in its original state before metallization. The results show that sputtering induces significant damage at the underlying A l 2 O 3 / S i interface as the measured interface defect density D it increases from 10 11 to 10 13 cm−2 eV. Interestingly, sputtering also generates a high density of positive charges Q tot at the interface as the charge changes from − 2 × 10 12 to + 7 × 10 12 cm − 2 . Thermal evaporation is found to be a softer method, with modest impact on D it and Q tot . Finally, Alnealing heals the damage but has also a significant impact on the charge of the film recovering the characteristic negative charge of A l 2 O 3 (∼−4 × 1012 cm − 2 ).","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79561681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

One‐step DcMS and HiPIMS sputtered CIGS films from a quaternary target 一步DcMS和HiPIMS溅射从第四元靶CIGS薄膜

Physica status solidi (A): Applied research Pub Date : 2023-08-27 DOI: 10.1002/pssa.202300178

Rachid Oubaki, Karima Machkih, H. Larhlimi, O. Abegunde, J. Alami, M. Makha

引用次数: 0

Detection of Harmful Chemical Compounds in Plastic Products Using a High‐Sensitivity Photonic Crystal‐Based Sensor 利用高灵敏度光子晶体传感器检测塑料制品中的有害化合物

Physica status solidi (A): Applied research Pub Date : 2023-08-27 DOI: 10.1002/pssa.202300547

S. Taya, Samer M. Srour, A. Almawgani, A. Hindi, I. Colak, S. Patel

{"title":"Detection of Harmful Chemical Compounds in Plastic Products Using a High‐Sensitivity Photonic Crystal‐Based Sensor","authors":"S. Taya, Samer M. Srour, A. Almawgani, A. Hindi, I. Colak, S. Patel","doi":"10.1002/pssa.202300547","DOIUrl":"https://doi.org/10.1002/pssa.202300547","url":null,"abstract":"The use of plastics can be dangerous due to the numerous industrial chemicals they contain. Di(2‐ethylhexyl) phthalate (DEHP), bisphenol A (BPA), and bisphenol S (BPS) are three detrimental organic chemicals that are used in the plastic industry. In this work, a highly sensitive photonic crystal (PCL) sensor is theoretically proposed and numerically simulated as a detector for DEHP, BPA, and BPS organic chemicals. The proposed PCL is a 1D that has the structure (GaAs/Si3N4/TiN)N/cavity layer/(GaAs/Si3N4/TiN)N, where N is the number of unit cells (UCs). The DEHP, BPA, and BPS analytes are assumed to be separately infiltrated into the cavity layer between two equal numbers of the UCs. The transmission spectra of the PCL are studied using the transfer matrix (TrMx) technique. The most important performance parameter is sensitivity so we have focused on it. A considerable sensitivity enhancement is obtained by raising the defect layer thickness and incidence angle. High sensitivities of 2350.51, 2168.45, and 2042.08 nm RIU−1 are obtained for DEHP, BPA, and BPS, respectively. In the results obtained, the way can be paved for a simple technique to detect chemical compounds.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87112101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of solid‐state dye‐sensitized solar cells by controlled evaporation of solvents for creation of facile charge transport pathway 通过控制溶剂蒸发制备固态染料敏化太阳能电池，以创造易电荷传输途径

Physica status solidi (A): Applied research Pub Date : 2023-08-27 DOI: 10.1002/pssa.202300116

Y. Kurokawa, T. Kato, S. Pandey

{"title":"Fabrication of solid‐state dye‐sensitized solar cells by controlled evaporation of solvents for creation of facile charge transport pathway","authors":"Y. Kurokawa, T. Kato, S. Pandey","doi":"10.1002/pssa.202300116","DOIUrl":"https://doi.org/10.1002/pssa.202300116","url":null,"abstract":"Solid‐state dye‐sensitized solar cells (ss‐DSSCs) based on MK‐2 dye‐sensitized TiO2 photoanode and the most commonly used I‐/I3\u0000‐ redox electrolyte were successfully fabricated by the simple method of solidification of the injected liquid electrolyte under slow solvent evaporation. The use of the ionic liquid, which is solid at room temperature, and slow evaporation of solvent at low temperature was a key step for solidification towards the fabrication of ss‐DSSCs. It has been demonstrated that ss‐DSSCs thus fabricated not only retains about 80 % of photoconversion efficiency (PCE) as compared to their liquid‐state DSSCs counterpart but also maintain the device stability for more than 1000 hours. PCE of the ss‐DSSCs was found to increase as a function of the increasing concentration of the ionic liquid used for electrolyte preparation. The ionic liquid concentration of 1.2 M, there was a good balance between PCE and durability leading to not only retention of about 70% of PCE as compared to its liquid‐state DSSCs counterparts but also maintaining the stability of the solar cell for more than 1000 hours stored at room temperature.This article is protected by copyright. All rights reserved.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"32 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90780210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimizing Strategy for Charge Injection in the Single‐Emitting‐Layer Light‐Emitting Transistor 单发射层发光晶体管电荷注入的优化策略

Physica status solidi (A): Applied research Pub Date : 2023-08-26 DOI: 10.1002/pssa.202300361

Haoxin Tian, Jun Sun, Jingzan Jiang, Shichuan Ke, Xinlu Teng, Lin Lin, Luting Yan, Z. Lou, Yanbing Hou, Yufeng Hu, F. Teng

{"title":"Optimizing Strategy for Charge Injection in the Single‐Emitting‐Layer Light‐Emitting Transistor","authors":"Haoxin Tian, Jun Sun, Jingzan Jiang, Shichuan Ke, Xinlu Teng, Lin Lin, Luting Yan, Z. Lou, Yanbing Hou, Yufeng Hu, F. Teng","doi":"10.1002/pssa.202300361","DOIUrl":"https://doi.org/10.1002/pssa.202300361","url":null,"abstract":"Herein, a single‐layer light‐emitting transistor with a good on/off ratio of more than 106 is presented based on the iridium complex as a light‐emitter layer. Comprehensive experiments and simulations demonstrate that the thickness of the emitting layer can significantly improve the majority carrier injection in the source electrode. The electrode work function determines the minority carrier injection in the drain electrode, which is crucial for the light emission of the transistor. Furthermore, the increased source injection allows for a higher channel current, thereby increasing drain injection. Most importantly, although the above methods can improve the device channel current and light‐emitting brightness, the electroluminescence efficiency cannot be optimized since the increased minority carriers are much less than the increased majority carriers, resulting in most increased majority carriers cannot be contributed to the charge recombination. To achieve a higher efficient device, the channel current is supposed to be low when a conductive channel is well formed. This goal is achieved by using an ionic liquid gate to replace SiO2 gate for fabricating the light‐emitting single‐layer transistor. The efficiency is improved from ≈0.1 to 1.5 cd A−1. This work provides a new strategy for constructing high‐performance single‐layer light‐emitting transistors.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"62 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83550476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An Inertial Noncontact Piezoelectric Rotary Energy Harvester with Linear Reciprocating Motion 线性往复运动惯性非接触压电旋转能量采集器

Physica status solidi (A): Applied research Pub Date : 2023-08-26 DOI: 10.1002/pssa.202300330

Xiaotian Zheng, Lipeng He, Shuai Jiang, Lei Sun, Zhonghua Zhang, G. Cheng

{"title":"An Inertial Noncontact Piezoelectric Rotary Energy Harvester with Linear Reciprocating Motion","authors":"Xiaotian Zheng, Lipeng He, Shuai Jiang, Lei Sun, Zhonghua Zhang, G. Cheng","doi":"10.1002/pssa.202300330","DOIUrl":"https://doi.org/10.1002/pssa.202300330","url":null,"abstract":"Herein, an inertial noncontact piezoelectric rotary energy harvester with linear reciprocating motion (L‐PREH) is presented. The existing piezoelectric rotary harvester employing gravity excitation has limited performance when the rotation speed is high due to the negative influence of centrifugal force. L‐PREH translates rotational motion into linear motion via the transmission chain and employs inertial force excitation to overcome high‐speed performance limitations. Using the Euler–Bernoulli beam theory, the motion governing equations of piezoelectric transducers have been derived, and an electromechanical coupling model has been constructed. Moreover, the piezoelectric transducer is simulated and analyzed. The control variable approach is used to explore the key parameters impacting output performance. When the mass is positioned in symmetrical method, the guide rod is fixed in noncentral place, the limiter is fixed in longest distance, the distance between the mass's center and the main frame is the maximum, and the rotating speed is 450 RPM, the maximum peak‐to‐peak output voltage of an L‐PREH single transducer is 24 V. The highest power of two piezoelectric transducers linked in parallel with a load resistance of 400 kΩ is 0.27 mW, which can light up more than 70 light‐emitting diodes. The L‐PREH can drive low‐power devices.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"296 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74577338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural, Spectroscopic, and Electrical Properties of (Ho, Mn)‐Codoped Bismuth Ferrites Synthesized Through Solid‐State Route 固态法合成(Ho, Mn)共掺杂铋铁氧体的结构、光谱和电学性质

Physica status solidi (A): Applied research Pub Date : 2023-08-25 DOI: 10.1002/pssa.202300344

Soumya G. Nair, J. Satapathy

{"title":"Structural, Spectroscopic, and Electrical Properties of (Ho, Mn)‐Codoped Bismuth Ferrites Synthesized Through Solid‐State Route","authors":"Soumya G. Nair, J. Satapathy","doi":"10.1002/pssa.202300344","DOIUrl":"https://doi.org/10.1002/pssa.202300344","url":null,"abstract":"Bismuth ferrites (BiFeO3) are popularly known as BFOs and have potential application at room temperature in present‐day material science and ceramic industry due to their multiferroic and optical properties. Synthesis methods, temperature treatments, and doping are effective for tuning the structural and multiferroic properties of BFO, among which rare earth metals in Bi‐site and transition metals in Fe‐site have shown interesting results. This work explores the synthesis and characterizations of (holmium, manganese)‐codoped BFOs where solid‐state synthesis route and some electrical analyses are the novel studies attempted herein. X‐ray diffraction results explain the structural transition from rhombohedral to mixed‐phase ordering. Grain formation and the elemental concentrations are studied using scanning electron microscopy (SEM) and energy‐dispersive ray spectra (EDAX). Electrical analysis such as dielectric behavior with respect to frequency and temperature impedance analysis is studied in detail. Polarization versus electric field (P–E) hysteresis loop shows the ferroelectric nature of the codoped sample with lossy nature and reduced remnant polarization with doping. The dielectric anomalies with frequency and temperature are analyzed in detail, and antiferromagnetic transition around Neel temperature is discussed.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"53 3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83677150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0