Fabrication of 1T VS2 Electrode‐Based In‐Plane Micro‐Supercapacitor Using a Cost‐Effective Mask‐Assisted Printing Technique

A. Mandal, Ashish Kumar Yadav, S. K. Pandey, S. Chakrabarti
{"title":"Fabrication of 1T VS2 Electrode‐Based In‐Plane Micro‐Supercapacitor Using a Cost‐Effective Mask‐Assisted Printing Technique","authors":"A. Mandal, Ashish Kumar Yadav, S. K. Pandey, S. Chakrabarti","doi":"10.1002/pssa.202300274","DOIUrl":null,"url":null,"abstract":"Vanadium disulfide (VS2) is an important member of the transition‐metal dichalcogenides (TMDs) family, which offers high conductivity. In nature, it can exist in two phases, i.e., 1T and 2H. Herein, the metallic 1T VS2‐based in‐plane micro‐supercapacitor (MSC) is fabricated by a facile‐mask‐assisted printing technique. Initially, the 1T VS2 nanosheets are synthesized using a simple one‐pot hydrothermal route. The material characterizations have claimed the formation of a 1T phase and the density of states (DOS) reveal that the 1T phase of VS2 is metallic in nature. After experimental and theoretical investigations of synthesized nanosheets, a VS2 electrode‐based in‐plane MSC is fabricated using a simple mask‐assisted printing technique. The fabricated device demonstrates excellent capacitance retention of 97.6% after 1000 cycles of cyclic voltammetry measurement at a 100 mV s−1 scan rate. The device also shows an excellent areal capacitance of 212.7 mF cm−2 and a high areal energy density of 10.63 μWh cm−2 at a high‐power density of 4.45 mW cm−2. This low‐cost and simple fabrication process can produce high‐performance in‐plane MSC devices.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"63 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica status solidi (A): Applied research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/pssa.202300274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Vanadium disulfide (VS2) is an important member of the transition‐metal dichalcogenides (TMDs) family, which offers high conductivity. In nature, it can exist in two phases, i.e., 1T and 2H. Herein, the metallic 1T VS2‐based in‐plane micro‐supercapacitor (MSC) is fabricated by a facile‐mask‐assisted printing technique. Initially, the 1T VS2 nanosheets are synthesized using a simple one‐pot hydrothermal route. The material characterizations have claimed the formation of a 1T phase and the density of states (DOS) reveal that the 1T phase of VS2 is metallic in nature. After experimental and theoretical investigations of synthesized nanosheets, a VS2 electrode‐based in‐plane MSC is fabricated using a simple mask‐assisted printing technique. The fabricated device demonstrates excellent capacitance retention of 97.6% after 1000 cycles of cyclic voltammetry measurement at a 100 mV s−1 scan rate. The device also shows an excellent areal capacitance of 212.7 mF cm−2 and a high areal energy density of 10.63 μWh cm−2 at a high‐power density of 4.45 mW cm−2. This low‐cost and simple fabrication process can produce high‐performance in‐plane MSC devices.
利用低成本的掩模辅助印刷技术制造1T VS2电极平面内微型超级电容器
二硫化钒(VS2)是过渡金属二硫化物(TMDs)家族的重要成员,具有高导电性。在自然界中,它可以存在于两个阶段,即1T和2H。本文采用易掩膜辅助印刷技术制备了金属1T VS2基平面内微超级电容器(MSC)。最初,采用简单的一锅水热方法合成了1T VS2纳米片。材料表征表明VS2的1T相形成,态密度(DOS)表明VS2的1T相具有金属性质。经过对合成纳米片的实验和理论研究,采用简单的掩模辅助印刷技术制备了基于VS2电极的平面内纳米薄片。在100 mV s−1扫描速率下,经过1000次循环伏安测量,该器件的电容保持率达到97.6%。该器件在高功率密度为4.45 mW cm - 2时,具有212.7 mF cm - 2的优异面电容和10.63 μWh cm - 2的高面能量密度。这种低成本和简单的制造工艺可以生产出高性能的平面内MSC器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信