超临界流体技术研究硫处理对材料特性和电阻开关器件应用的影响

Jen-Wei Huang, Po-Hsun Chen, Tsung-Han Yeh, Chih-Cheng Yang
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引用次数: 1

摘要

提出了一种基于超临界流体(SCF)处理的硫处理方法,并研究了其对银掺杂材料和器件的影响。硫处理是通过将硫粉与二氧化碳(CO2)混合在反应室中,在高压(3000 psi)和低反应温度(120°C)下实现的。实验结果表明,SCF硫处理可以显著改变Ag掺杂SiO2 (Ag:SiO2)薄膜的表面形貌、结晶、化学键和摩尔元素等特性。此外,SCF硫处理也应用于Ag:SiO2基器件,以验证电阻开关(RS)性能。电学测量结果表明,经SCF硫处理后的装置表现出更好的性能。在设置和重置过程中,毕业生RS行为也表现出多电平切换,这证明了所提出的SCF硫处理的可能应用。此外,采用电流拟合方法验证了RS特性,以说明SCF硫处理下Ag:SiO2基器件的载流子输运特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique
A sulfur treatment based on the supercritical fluid (SCF) treatment is proposed and its effect on the silver (Ag)‐doped material and device is investigated. The sulfur treatment is achieved by mixing sulfur powder with carbon dioxide (CO2) in a reaction chamber under high pressure (3000 psi) at low reacting temperature (120 °C). Based on the experimental results, the SCF sulfur treatment can dramatically change the Ag‐doped SiO2 (Ag:SiO2) thin‐film characteristics, including surface morphology, crystallization, chemical bonding, and mole elements in accordance with the analyses of various materials. In addition, the SCF sulfur treatment is also applied to the Ag:SiO2‐based device to verify the resistance switching (RS) properties. Based on electrical measurement results, the device with the SCF sulfur treatment exhibits better performance. The graduate RS behaviors also exhibit multilevel switching in both set and reset processes, which proves its possible applications of the proposed SCF sulfur treatment. In addition, the current fitting method is used to verify the RS properties to illustrate the carrier transportation characteristics of the Ag:SiO2‐based device with the SCF sulfur treatment.
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