{"title":"Recent advances in flexible piezoelectric composite thin films: Material innovations and performance optimization","authors":"Hailin Wang, Suzhu Yu, Jun Wei","doi":"10.1063/5.0299695","DOIUrl":"https://doi.org/10.1063/5.0299695","url":null,"abstract":"Flexible piezoelectric composite thin films have emerged as a transformative platform for next-generation self-powered electronics, soft robotics, and biomedical devices, overcoming the inherent rigidity of traditional ceramics and the limited piezoelectric response of polymers. This comprehensive review systematically examines the significant breakthroughs of the past decade, focusing on synergistic advancements in material innovation and performance optimization. It explores the development of ultrahigh-performance lead-based systems and the substantial progress in eco-friendly lead-free alternatives, including textured ceramics, perovskite derivatives, and two-dimensional materials. The article further details how structural engineering—through architectures such as vertically aligned arrays and multilayer heterostructures—enhances stress transfer and electromechanical coupling. Critical strategies to overcome fundamental limitations are analyzed, encompassing interfacial modifications, self-poling mechanisms, and the burgeoning role of machine learning in accelerating material discovery. The application spectrum spanning wearable sensors, implantable harvesters, and industrial IoT systems is reviewed, highlighting the translation of laboratory innovations toward practical deployment. Finally, persistent challenges and strategic future directions are outlined, emphasizing the need for sustainable materials, hybrid energy systems, and scalable manufacturing to fully realize the potential of intelligent, autonomous piezoelectric technologies.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"57 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147292380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiangtian Xiao, Dadi Tian, Fumin Lu, Chuangping Liu, Xiaoli Zhang, Dan Wu, Xiao Wei Sun, Kai Wang
{"title":"Revealing the main limiting factors of modulation bandwidth in quantum dot light-emitting diodes through an electro-optical coupled modulation model","authors":"Xiangtian Xiao, Dadi Tian, Fumin Lu, Chuangping Liu, Xiaoli Zhang, Dan Wu, Xiao Wei Sun, Kai Wang","doi":"10.1063/5.0313518","DOIUrl":"https://doi.org/10.1063/5.0313518","url":null,"abstract":"Quantum dot light-emitting diodes (QLEDs) are promising for light sources in visible light communications due to their solution-processability and chip integration capability. The equivalent circuit model is a typical method to analyze modulation bandwidth for QLEDs, but it only describes electrical behavior, failing to quantify electro-optical conversion, and hindering the identification of the main factors limiting modulation bandwidth of QLEDs. This serious issue prevents further improvement of QLED modulation bandwidth under theoretical guidance. This study proposes an electro-optical coupled model integrating electro-optical conversion (equated to a low-pass filter) into the equivalent circuit. The model reflects comprehensive physical processes, shows high consistency with experimental results. We identify the electroluminescence decay time as the main bottleneck limiting the bandwidth. Targeted optimizations significantly improve modulation bandwidth from 1.57 to 8.04 MHz, providing actionable guidelines for QLEDs with high modulation bandwidth.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"9 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147292378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dengyang Guo, Alan R. Bowman, Sebastian Gorgon, Changsoon Cho, Young-Kwang Jung, Jiashang Zhao, Linjie Dai, Jaewang Park, Kyung Mun Yeom, Satyawan Nagane, Stuart Macpherson, Weidong Xu, Jun Hong Noh, Sang Il Seok, Tom Savenije, Samuel D. Stranks
{"title":"Modulating non-radiative recombination related to shallow traps in halide perovskites","authors":"Dengyang Guo, Alan R. Bowman, Sebastian Gorgon, Changsoon Cho, Young-Kwang Jung, Jiashang Zhao, Linjie Dai, Jaewang Park, Kyung Mun Yeom, Satyawan Nagane, Stuart Macpherson, Weidong Xu, Jun Hong Noh, Sang Il Seok, Tom Savenije, Samuel D. Stranks","doi":"10.1063/5.0279622","DOIUrl":"https://doi.org/10.1063/5.0279622","url":null,"abstract":"Halide perovskite solar cells have demonstrated a rapid increase in power conversion efficiencies. Understanding and mitigating remaining carrier losses in halide perovskites is now crucial to enable further increases to approach their practical efficiency limits. Recent observations in halide perovskites have revealed processes such as shallow carrier trapping, which give rise to an apparent non-radiative bimolecular channel that is difficult to distinguish from intrinsic radiative recombination. Here, we quantify this shallow-trap manifestation by jointly analyzing time-resolved photoluminescence and quantum efficiency to separate the total second-order term into radiative (ηesck2r) and shallow-trap-mediated non-radiative contributions (k2non), and evaluate their device impact. We show that k2non is strongly modulated by temperature and surface chemistry and thus depends on extrinsic factors and its origin is independent from deep traps, whereas the intrinsic radiative coefficient and intrinsic second-order recombination follow detailed-balance expectations and align with theoretical evaluations through van Roosbroeck–Shockley relations. Based on density functional theory simulations and Quasi-Fermi level calculations, we propose that surface states are the primary origin of this shallow-trap-related second-order component, contributing up to ∼80 mV of the overall reduction in Voc at room temperature. This work reveals that the origin of carrier losses from two non-radiative recombination types (first and second order) are not linked, emphasizing the need for distinctive mitigation strategies targeting each type to unlock the full efficiency potential of perovskite solar cells.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"14 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147292223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Muhammad Rizwan Khan, Ghulam Hussain, Jin Yang, Xiaoguang Li, Jincheng Kong, Zheng Wang
{"title":"Exploring gapped metals: An emerging class of multi-functional quantum materials","authors":"Muhammad Rizwan Khan, Ghulam Hussain, Jin Yang, Xiaoguang Li, Jincheng Kong, Zheng Wang","doi":"10.1063/5.0308115","DOIUrl":"https://doi.org/10.1063/5.0308115","url":null,"abstract":"The search for new quantum material phases has long been a major focus in condensed matter physics and materials science due to their intriguing physics and potential applications. Recently, a new class of multi-functional quantum materials has been emerged that combines the characteristic traits of both metals and insulators, known as gapped metals. These materials hold the Fermi level within the conduction or valence band and an internal bandgap between principal band edges. Owing to their high intrinsic conductivity and internal bandgap, these materials are considered as a promising substitute for heavily doped semiconductors without external doping. They exhibit potential for high-performance thermoelectric, transparent conducting, photocatalytic, and nano-electronic devices. Furthermore, gapped metals display properties resembling electrides, topological materials, and even dilute magnetic semiconductors without intentional transition-metal doping, due to their spin-dependent band gaps. Their intrinsic carrier concentration and internal bandgap can be tailored via spontaneous non-stoichiometry, enabling tunable functionalities. Motivated by these unique characteristics and promising applications, this review comprehensively examined the recent theoretical and experimental progress on gapped metals, highlighted their potential applications, elucidated their distinct physical properties, and outlined the future directions for their usages in the development of advanced technologies.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"18 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146204868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Quantum emitters based on 2D materials: Progress and prospects","authors":"Hao Zhou, Ting Wang, Hongliang Li, Xiaoran Wang, Junyong Wang, Gaolei Zhan, Baiquan Liu, Junhong Yu, Xuechao Yu, Kai Zhang","doi":"10.1063/5.0282350","DOIUrl":"https://doi.org/10.1063/5.0282350","url":null,"abstract":"In modern quantum technologies, quantum emitters (QEs) have emerged as core components of quantum communication networks and on-chip quantum information processing, representing a pivotal link in future quantum systems. Due to atomic-scale thickness, the absence of dangling bonds at interfaces, and surface-localized photonic states that facilitate efficient light–matter interactions, two-dimensional (2D) materials are considered ideal platforms for high-performance, wavelength-tunable, and on-chip integrable solid-state QEs. While QEs have been demonstrated in various 2D materials, several challenges and unresolved issues remain. This review systematically summarizes the latest advances in the research of QEs based on 2D materials, aiming to provide comprehensive introductory guidance for beginners or interested readers. We first outline the fundamentals of single-photon emission, including basic principles, performance metrics, and experimental characterization methods. A comprehensive survey of cutting-edge studies on QEs based on hexagonal boron nitride, transition metal dichalcogenides, and twisted moiré heterostructures is presented, highlighting emission mechanisms and structure–luminescence correlations. Furthermore, we summarize strategies for creating and localizing QEs through external field engineering in 2D systems, tuning emission wavelengths, and enhancing emission performance, including wavelength tuning and emission enhancement techniques. Finally, current challenges are analyzed, and perspectives for advancing scientific exploration in this field are proposed. Leveraging their unique physical properties and integration potential, these 2D QEs hold great promise for quantum information technologies, communication systems, and various interdisciplinary fields.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"98 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146160143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Theoretically revisiting structural thermal armor for efficient Leidenfrost effect inhabitation","authors":"Mingyu Li, Wei Wang, Mengnan Jiang, Huaduo Gu, Yuchao Li, Hangchen Liu, Penghao Duan, Baoping Zhang, Zuankai Wang","doi":"10.1063/5.0291834","DOIUrl":"https://doi.org/10.1063/5.0291834","url":null,"abstract":"Inhibiting Leidenfrost effect to enhance heat transfer is crucial yet a formidable challenge, particularly at extremely high temperatures. Previously, we developed a heterogeneous structural thermal armor (STA) that fundamentally inhibits Leidenfrost effect even over 1000 °C by integrating thermally insulating porous membranes into thermally conductive metal pillars. Despite this, there are still some unrevealed mechanisms underlying the efficient heat transfer of heterogeneous STA that are beyond the current experimental capacity, as exemplified by the invisible formation of vapor layer. Herein, we extended the understanding of heat transfer of STA by conducting a theoretical simulation using a combination of the volume of fraction model and the Lee phase change model. We revealed the critical role of surface free energy of porous membrane in promoting wettability, evaporation, and particularly the vapor evacuation dynamics of heterogeneous STA. This work not only advances our fundamental understanding of Leidenfrost effect inhabitation but also provides insight on designing heterogeneous STA with optimal heat transfer efficiency.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"11 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146160142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ultralow fatigue in hafnia-based ferroelectric capacitors achieved by suppressing cycling-induced phase transitions through unconventional oxygen-vacancy redistribution","authors":"Chunlai Luo, Weizhen Wang, Junfeng Zheng, Pei Wang, Boxu Yan, Zhen Fan, Wentao Shuai, Ruiqiang Tao, Songhua Cai, Xubing Lu, Jun-Ming Liu","doi":"10.1063/5.0296979","DOIUrl":"https://doi.org/10.1063/5.0296979","url":null,"abstract":"Hafnia (HfO2)-based ferroelectric devices face reliability challenges stemming from the fact that the polar phase is metastable. The highest reported ferroelectric fatigue-endurance value stands at 1012 cycles, quite good but insufficient for high-ranking applications. Especially, the remnant polarization upon the fatigue testing degrades drastically at elevated temperatures. This study proposes an innovative strategy to achieve excellent fatigue-resistant performance by designing the (Hf0.5Zr0.5O2/ZrO2)n superlattices, characterized by the measured fatigue-endurance value of 1012 cycles at an elevated temperature of 400 K (2.0 MV/cm). Notably, the extrapolated fatigue-endurance number at room temperature reaches an impressive high value of 5.26 × 1017 cycles. This superior fatigue endurance can be attributed to the effective suppression of the orthorhombic (O) to monoclinic (M) in the Hf0.5Zr0.5O2 layer and orthorhombic to tetragonal (T) phase transitions in the ZrO2 layer due to the redistribution of oxygen vacancies during electric field cycling. This work establishes a promising pathway for fabricating long-lifetime and temperature-tolerant robust hafnia-based ferroelectric devices for advanced applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"98 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146160144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hanlong Wan, Christian Valoria, Habilou Ouro-Koura, Zhiqun Daniel Deng
{"title":"Advancing A3 refrigerant leak detection: Sensor technologies, challenges, and research outlook","authors":"Hanlong Wan, Christian Valoria, Habilou Ouro-Koura, Zhiqun Daniel Deng","doi":"10.1063/5.0308931","DOIUrl":"https://doi.org/10.1063/5.0308931","url":null,"abstract":"Refrigerant leakage poses significant safety and environmental challenges in heating, ventilation, air conditioning, and refrigeration (HVAC&R) systems, particularly with the increasing use of highly flammable hydrocarbon (A3) refrigerants such as propane (R-290), ethane (R-170), butane (R-600), and isobutane (R-600a). Existing sensor technologies developed for traditional halogenated refrigerants are often unsuitable for accurately detecting low concentrations of hydrocarbons due to differences in chemical properties and flammability risks. This paper presents a comprehensive review of gas-sensing technologies applicable to A3 refrigerants, emphasizing both established and emerging technologies that could be adapted from other industries for use in HVAC&R applications. The sensor categories evaluated include metal–oxide semiconductor (MOS), catalytic, optical (photoacoustic spectroscopy—PAS, quartz-enhanced PAS, non-dispersive infrared—NDIR, fiber optic), acoustic (surface acoustic wave—SAW, quartz crystal microbalance—QCM), electrochemical, capacitive, and emerging nanomaterial-based sensors (C2N, sulfur-doped silicon carbide nanotube, surface plasmon resonance). Each technology was assessed based on critical parameters such as sensitivity, selectivity, response time, power consumption, and practicality for integration into HVAC&R systems. Although MOS, PAS/quartz-enhanced photoacoustic spectroscopy, and NDIR sensors demonstrate potential, limitations related to elevated operating temperatures, vibration sensitivity, and cross-selectivity remain significant concerns. Emerging technologies, including SAW, QCM, and novel nanostructured materials, exhibit promising performance characteristics such as room temperature operation, rapid response, high sensitivity, and compact size; however, they require further development and validation for reliability, long-term stability, and commercialization. This paper also identifies key gaps, challenges, and research opportunities, emphasizing the importance of developing robust calibration protocols and clearly defining operational conditions within HVAC&R systems to optimize sensor selection, safety, and system efficiency.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"301 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146160218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Evolution in the development of photodetectors: From ultraviolet to terahertz","authors":"A. Rogalski","doi":"10.1063/5.0288436","DOIUrl":"https://doi.org/10.1063/5.0288436","url":null,"abstract":"The paper presents the evolution in the development of photodetectors over a wide spectral range, from the ultraviolet to the infrared, over the last two decades. Technological advancements have led to the evolution of detector architectures that enhance device sensitivity, improve frequency response rates, reduce noise levels, and increase gain bandwidth. Initially, the key mechanisms of detector operation are briefly discussed, including those found in the new generation of low-dimensional solid (LDS) photodetectors. More attention is paid to the advantages and disadvantages of the new generation of materials used in active areas of photodetectors. In the case of ultraviolet (UV) photodetectors, AlGaN and Ga2O3 are extremely promising due to their low complexity and weight, while offering good sensitivity and robustness. Also, UV photodetector concepts inspired by new device architectures based on LDS materials are described. Due to the large number of published papers, visible-range photodetectors are treated rather marginally. Only the general development of their arrays is outlined. Among different types of infrared (IR) detectors, special attention is directed toward HgCdTe alloys, type-II superlattices, quantum wells, and lead salts. The performance of new emerging LDS photodetectors (mainly based on colloidal quantum dots and 2D materials) is compared with standard ones dominating the commercial market. This section of the article also covers hybrid infrared detector arrays, with particular emphasis on hybridization techniques, pixel scaling, thermal system optics, and signal readout electronics. An attempt was also made to describe the state of the new generation of IR focal plane arrays (FPAs) with LDS pixels. Finally, terahertz imaging arrays are discussed, with a focus on systems that operate at both room temperature and cryogenic temperatures. The challenges facing the implementation of LDS materials and the prospects for their development in terahertz imaging are also described.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"92 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146161029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fengjun Zhuo, Zhenyu Dai, Kai Chang, Hongxin Yang, Zhenxiang Cheng
{"title":"Moiré spintronics: Emergent phenomena, material realization and machine learning accelerating discovery","authors":"Fengjun Zhuo, Zhenyu Dai, Kai Chang, Hongxin Yang, Zhenxiang Cheng","doi":"10.1063/5.0300788","DOIUrl":"https://doi.org/10.1063/5.0300788","url":null,"abstract":"Twisted van der Waals (vdW) materials have emerged as a promising platform for exploring exotic quantum phenomena and engineering novel material properties in two dimensions, potentially revolutionizing developments in spintronics. This review provides an overview of recent progress on emerging moiré spintronics in twisted vdW materials, with a particular focus on two-dimensional magnetic materials. Following a brief introduction to the general features of twisted vdW materials, we discuss recent theoretical and experimental studies on stacking-dependent interlayer magnetism, non-collinear spin textures, moiré magnetic exchange interactions, moiré skyrmions, and moiré magnons. We further highlight the potential of machine learning to accelerate the discovery and design of multifunctional materials for moiré spintronics. Finally, we conclude by addressing the most pressing challenges and potential opportunities in this rapidly expanding field.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"82 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146161030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}