Applied physics reviews最新文献

{"title":"Two-dimensional photodetectors enabling ultraminiaturized computational spectrometers","authors":"Shida Huo,Xiaodong Hu,Enxiu Wu","doi":"10.1063/5.0337027","DOIUrl":"https://doi.org/10.1063/5.0337027","url":null,"abstract":"Miniaturized spectrometers that can be seamlessly integrated into on-chip, portable, and wearable systems are essential for next-generation sensing and information-processing technologies. Computational spectrometers, which reconstruct incident spectra by combining device-dependent spectral responses with reconstruction algorithms, offer a unique miniaturization route beyond conventional dispersive or interferometric architectures. Their ultimate performance is jointly governed by spectral encoding capability and reconstruction robustness. In the detector-encoding route, the choice of photodetector materials and tuning strategies directly determines the dimensionality, diversity, and stability of spectral encoding, thereby setting the upper limit of reconstruction accuracy and the attainable degree of system miniaturization. Two-dimensional (2D) van der Waals (vdW) materials have recently emerged as exceptional candidates for realizing high-performance ultraminiaturized computational spectrometers, owing to their atomic thickness, strong light-matter interactions, continuously tunable band structures, and vdW heterostructures compatibility. These properties make 2D photodetectors particularly attractive for approaching the ultimate limit of device-level miniaturization while maintaining rich spectral encoding capabilities. This review provides a comprehensive perspective on 2D photodetector-based computational spectrometers. We first analyze the theoretical foundations and operational schemes of linear and nonlinear computational spectrometers, highlighting the distinct roles of device physics in spectral encoding. We then discuss spectral response modulation strategies and the evaluation of spectral encoding effectiveness, followed by reconstruction algorithms with particular emphasis on compressive sensing and deep learning. Key performance metrics are summarized and compared across representative demonstrations. Emerging proof-of-concept applications are subsequently reviewed. Finally, we outline future challenges and opportunities that may advance this field from current lab-scale demonstrations toward practical edge-device deployment.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"27 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Minimizing microwave loss of amorphous hydrogenated silicon parallel-plate capacitors for superconducting integrated devices","authors":"Daria A. Moskaleva,Dmitry A. Baklykov,Dmitry O. Moskalev,Anton I. Ivanov,Aleksei R. Matanin,Nikita S. Smirnov,Nikita D. Korshakov,Evgeniy V. Zikiy,Julia A. Agafonova,Victor I. Polozov,Margarita V. Androschuk,Andrey S. Chernyshov,Julia A. Kurochkina,Igor S. Pilnik,Ivan I. Kargapoltsev,Ilya A. Ryzhikov,Alexander V. Andriyash,Ilya A. Rodionov","doi":"10.1063/5.0322287","DOIUrl":"https://doi.org/10.1063/5.0322287","url":null,"abstract":"Amorphous hydrogenated silicon (a-Si:H) based lumped elements are one of the promising ways for large-scale integration of superconducting quantum devices. We present a detailed study devoted to the plasma-enhanced chemical vapor deposition process parameters' influence on the structure and morphology of a-Si:H dielectric thin films. We experimentally demonstrate a microcrystalline-to-amorphous growth transition by changing the H2/SiH4 ratio and establish a relationship between the film's structure, thickness, and dielectric loss tangent (tan δ). It is shown that the best dielectric loss tangents of tan δLP = 4.5 × 10−5 (average 9.2 × 10−5) and tan δHP = 1.0 × 10−6 (average 1.2 × 10−6) for superconducting lumped elements with 350 nm-thick amorphous films can be achieved in single- and multi-photon regimes at sub-20 mK, correspondingly. These values are extracted by characterizing superconducting resonators with integrated parallel-plate capacitors (C = 0.2…6.0 pF) for a frequency range from 4.0 to 7.0 GHz. The presented low-loss a-Si:H films can be useful for various superconducting quantum applications, which is illustrated by the fabrication of lumped-element bandpass filters with a well-predicted amplitude–frequency response characteristic.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"29 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Polariton-enhanced multi-dimensional mid-infrared response devices","authors":"Xue-Qing Zhu,Dan Guo,Minjie Zhou,Tianrui Zhai","doi":"10.1063/5.0347240","DOIUrl":"https://doi.org/10.1063/5.0347240","url":null,"abstract":"The mid-infrared (MIR, 2–25 μm) spectral range covers the molecular vibrational fingerprint region, two atmospheric windows (3–5 and 8–14 μm), and overlaps significantly with room-temperature blackbody radiation, making it invaluable for chemical and biomedical sensing, free-space communication, remote sensing, and thermal imaging. MIR response devices convert target characteristic information into detectable electrical, thermal, or optical signals, expanding the detection boundaries in critical application domains. However, conventional MIR response devices commonly face challenges such as cryogenic cooling dependence, large system volume, high cost, and reliance primarily on intensity response, making it difficult to identify complex backgrounds or camouflaged targets. MIR response devices designed based on polariton theory achieve on-chip acquisition of multi-dimensional optical field information including wavelength, intensity, and polarization through subwavelength-scale light field localization and mode control, promoting the evolution of MIR response devices from single intensity response to multi-dimensional information perception. This review discusses recent progress in polariton-enhanced multi-dimensional MIR response devices, detailing the working mechanisms of plasmon- and phonon-polaritons, and reviewing plasmon-enhanced devices based on metals, graphene, and black phosphorus, phonon-polariton-enhanced devices based on hexagonal boron nitride (hBN), α-MoO3, and silicon carbide (SiC), as well as the application status and inherent advantages of hybrid polaritons (graphene–metal, metal–SiO2, graphene–hBN/SiO2). This highlights that polariton enhancement plays a pivotal role in improving the sensitivity, integration, and information dimension acquisition of MIR response devices, and is expected to promote MIR response devices from single signal response toward a new stage of high sensitivity, on-chip, and multi-dimensional synergetic perception.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"11 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanoscale petabyte optical memories: Past, present, and beyond","authors":"Le Gao,Min Gu,Jing Wen","doi":"10.1063/5.0341282","DOIUrl":"https://doi.org/10.1063/5.0341282","url":null,"abstract":"Human society has entered a rapidly evolving, intelligence-driven information age. The swift advancement of information technologies, such as big data and large-scale AI models, generates immense demand for information processing and data storage capabilities, accompanied by significant corresponding challenges. Existing data centers, built upon traditional electromagnetic storage technology, exhibit substantial limitations in terms of data storage capacity, energy consumption, cost, and sustainability. Optical data storage, with its unique advantages such as low energy consumption, cost-effectiveness, and long-term data preservation, presents a highly promising solution to the data storage demands and challenges of both the present and the future. After the background introduction, this review first introduces the development of commercial optical storage technology and summarizes its limitations. The advancements in nanophotonics technology, including super-resolution microscopy, nanolithography, and nanomaterials, are then reviewed as the basis for developing nanoscale optical storage technology. This review proceeds with a comprehensive discussion of the major technical pathways for developing high-capacity optical storage technologies: multidimensional optical storage, holographic optical storage, and super-resolution optical storage technology. Several aspects are then proposed regarding the development of the next generation petabyte intelligent optical memory technology envisioned as the future direction. Finally, this review gives a brief summary and proposes an outlook on collaborative efforts across industries to tackle the needs and challenges of optical storage technology in the AI-driven era.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"16 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fast and low-energy Sb2Te phase-change radio-frequency switches enabling nonvolatile reconfigurable filters","authors":"Jianing Wang,Liyuan Chen,Zian Hong,Shilei Jin,Zhiyi Zhang,Kai Jiang,Liyan Shang,Yawei Li,Liangqing Zhu,Jinzhong Zhang,Linsheng Wu,Zhigao Hu","doi":"10.1063/5.0333975","DOIUrl":"https://doi.org/10.1063/5.0333975","url":null,"abstract":"Radio-frequency (RF) switches are fundamental building blocks in wireless communication and microwave systems. Phase-change materials (PCM) based RF switches, which offer nonvolatility, low power consumption, and fast programmability, have emerged as promising candidates for RF front ends. Here, we demonstrate high-performance Sb2Te-based phase-change RF switches with a fast switching speed of 50 ns, low switching energy of 11.17 nJ, and measured cycling endurance of 1100 switching cycles. The devices deliver excellent RF performance across the frequency range of 0.1–67 GHz, including an insertion loss below 0.8 dB and an isolation above 19.0 dB. The RF power handling capability reaches approximately 23–24 dBm at 5 GHz before irreversible degradation, with RF-induced self-actuation occurring at 13.65 dBm. Furthermore, the switches can be integrated into a fourth-order parallel-coupled bandpass filter, enabling multistate programmable reconfiguration with nonvolatile center-frequency tuning from 3.20 to 3.49 GHz. This study highlights the potential of Sb2Te as a promising PCM platform for energy-efficient and nonvolatile RF switches, providing insights into the development of next-generation adaptive and reconfigurable RF front-end architectures.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"16 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unveiling giant Rashba splitting in graphene via\u0000 in situ\u0000 cryogenic copper adatom deposition and multimodal characterization","authors":"Artem G. Rybkin,Ali Khademi,Alevtina A. Gogina,Anna A. Rybkina,Dmitrii A. Pudikov,Nikolay L. Zaitsev","doi":"10.1063/5.0326941","DOIUrl":"https://doi.org/10.1063/5.0326941","url":null,"abstract":"Enhancing spin–orbit interaction (SOI) in graphene is a critical step toward realizing graphene-based spintronic devices, yet it has remained experimentally challenging. In this work, we employ in situ cryogenic deposition of copper adatoms on graphene to overcome previous limitations and achieve a controlled, well-defined interface. Through a multimodal approach combining magnetotransport, spin- and angle-resolved photoelectron spectroscopy (spin-ARPES), scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron spectroscopy, and density functional theory (DFT), we provide unambiguous evidence of giant Rashba splitting in graphene. Magnetotransport measurements reveal electron doping, signatures of magnetism, and SOI enhancement, with an extracted Rashba strength of λBR≈ 1–2 meV at 0.1–0.2 monolayers (MLs) Cu coverage. Spin-ARPES directly confirms a giant Rashba splitting of ∼50 meV/8 meV for lower/upper Dirac cone at 0.5 ML Cu coverage. Furthermore, ARPES reveals the formation of flat bands near the Γ¯ point, their hybridization with graphene's π states, and quantifies the charge transfer efficiency of η=0.14. Our comprehensive experimental study, supported by our DFT calculations, resolves the long-standing theory-experiment discrepancy in adatom-induced SOI and establishes copper functionalization as a powerful method for tailoring graphene's spin properties.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"36 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Radiative recombination of near-surface donor–acceptor pairs in hydrogenated homoepitaxial diamond nanolayers","authors":"A. M. Romshin,A. P. Bolshakov,A. A. Zhivopistsev,A. V. Gritsienko,O. S. Kudryavtsev,P. A. Pivovarov,V. G. Ralchenko,I. I. Vlasov","doi":"10.1063/5.0346046","DOIUrl":"https://doi.org/10.1063/5.0346046","url":null,"abstract":"Hydrogen-terminated diamond is known for its p-type surface conductivity, which arises from a near-surface hole accumulation layer induced by adsorbed acceptor species. Here, we demonstrate that these surface acceptors also form optically active donor–acceptor pairs (DAPs) with substitutional nitrogen donors in diamond. The insertion of a nominally undoped CVD interlayer between a nitrogen-rich high-pressure high-temperature substrate and a hydrogen-terminated surface enables the precise tuning of the donor–acceptor separation with nanometer precision. Radiative DAP recombination appears as bright, spectrally narrow lines whose intensity, energy, and decay dynamics depend systematically on interlayer thickness. Individual lines show single-photon statistics, while ensembles exhibit strong polarization anisotropy reflecting the planar donor–acceptor geometry. These findings reveal an optical counterpart of hydrogen-induced surface transfer doping in diamond and establish a surface-defined, nanometer-tunable platform for engineering DAP-based quantum emitters.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"445 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149150329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Review on telecom quantum dots: Challenges and perspectives","authors":"Christopher Buchholz,Nicolas Claro-Rodriguez,Dennis Deutsch,Sonja Barkhofen,Dirk Reuter,Klaus D. Jöns","doi":"10.1063/5.0295810","DOIUrl":"https://doi.org/10.1063/5.0295810","url":null,"abstract":"Single and entangled photons are an essential resource for quantum communication, enabling the transmission of quantum information. For this technology to work on long-distance networks, quantum light sources are needed that produce photonic quantum states, such as single photons, ideally on demand and with a wavelength in the telecommunication wavelength bands. Solid-state semiconductor quantum dots emitting in these wavelength ranges are promising candidates for reliable single-photon sources. This review will give an overview of the current developments, challenges, and milestones reached in this field. We will provide an overview of different growth methods and discuss current state-of-the-art metrics such as single-photon emission, single-photon purity, and indistinguishability. Vital for the device development is a high source brightness, to ensure the transmission speed, necessary for real-world communication. Promising solutions to this are different kinds of micro-cavities, which deploy the Purcell effect for increased brightness and collection efficiency. In this review, first an overview of the growth methods for C-band quantum dots is given (II), followed by applications (III), and an overview of the solutions to current challenges in this field (IV).","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"3 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149090054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electronic spin engineering: Catalytic mechanisms and development opportunities for polysulfide conversion in lithiumsulfur batteries","authors":"Shunxian Yu,Tianlong Lan,Junliang Xu,Jianjun Song","doi":"10.1063/5.0324076","DOIUrl":"https://doi.org/10.1063/5.0324076","url":null,"abstract":"Electron spin serves as a pivotal quantum property that offers a revolutionary principle for overcoming kinetic limitations in lithium–sulfur (Li–S) batteries. As a fundamental quantum attribute, electron spin can be manipulated via spin state regulation, spin polarization, spin–orbit coupling, and crystal/ligand field effects to optimize orbital hybridization of active centers, adsorption strength of intermediates, and electron transfer pathways, thereby markedly boosting sulfur conversion kinetics. Recently, strategies encompassing intrinsic structural engineering, local coordination modulation, and external field coupling have been employed for precise spin state design, offering new opportunities to break the performance bottlenecks of Li–S batteries. This review systematically summarizes the theoretical fundamentals, regulation mechanisms, and structure–activity relationships of spin modulation in Li–S batteries, covering intrinsic structural engineering, local coordination tuning, and external field modulation, outlines the current research status and prevailing challenges, and provides future perspectives. It is anticipated to afford theoretical guidance for developing high-efficiency spin-based electrocatalysts and promoting the practical deployment of high-energy-density Li–S batteries.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"29 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149090055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Noble gas reactivity induced by high pressure: Physical and chemical insights","authors":"Xinyu Ou,Guang Sun,Hanyu Liu,Xin Zhong","doi":"10.1063/5.0337930","DOIUrl":"https://doi.org/10.1063/5.0337930","url":null,"abstract":"For nearly a century, noble gases stood as chemical spectators—present but unreacting, while high pressure has rewritten that identity. By forcibly reconstructing electronic shells, compression transforms these inert elements into reactive constituents, forging compounds that reshape both chemical bonding paradigms and planetary models. For example, Helium, the most inert of all, forms unique superionic phases in giant planets and reacts with deep-Earth minerals under pressure, offering a unified explanation for primordial isotope retention. Interestingly, xenon bonds with iron and nickel under core conditions, establishing a deep-Earth candidate reservoir that provides insights into the missing xenon paradox. These compelling discoveries do more than expand the periodic table; they forge unprecedented connections between high-pressure physics, geoscience, and materials science. This review synthesizes these advances into a unified framework, establishing predictive design principles that not only explain the stability of exotic compounds, but also guide the targeted synthesis of noble gas-bearing functional materials across the pressure landscape.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"36 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149090056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}