Applied physics reviews最新文献

{"title":"p- and n-Type doping of AlN: Current challenges, emerging solutions, and device applications","authors":"Saif Taqy,Ayesha Tasnim,Istiaq F. Shiam,Dhanu Chettri,Ariful Haque","doi":"10.1063/5.0330815","DOIUrl":"https://doi.org/10.1063/5.0330815","url":null,"abstract":"Ultrawide bandgap aluminum nitride (AlN) has recently gained significant attention for high-power electronics and deep-ultraviolet (DUV) optoelectronics applications owing to its exceptionally large and direct bandgap, high breakdown field, and thermal and chemical stability. While these intrinsic properties promise substantial performance improvements over silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), and diamond devices, the core challenge lies in achieving a reliable n- and p-type doping due to deep impurity levels, carrier compensation, and native defect formation. This review is motivated by the urgent need to bridge fundamental doping science with device engineering to unlock the full potential of AlN in high-power devices and solar-blind DUV devices. We discuss a clear roadmap, beginning with a contextual overview of wide- and ultrawide bandgap semiconductors, highlighting why AlN stands out for high-power applications. The body of the review is structured into four core sections, starting with n-type doping techniques, covering silicon, oxygen, and germanium donors, compensation effects, and deep-level centers. Then, the challenges and progress in p-type doping are discussed, evaluating acceptor species (e.g., Mg, Be, C), co-doping schemes, and impurity-band engineering. Section IV focuses on different doping methods, including metal-organic chemical vapor deposition, molecular-beam epitaxy, metal-modulated epitaxy, ion implantation, and polarization doping, and their role in defect control and non-equilibrium activation. Section V presents how these material innovations translate to device prototypes, including Schottky diodes, polarization-doped field effect transistors, and deep-UV emitters, illustrating gradual improvements in the current technology. The review concludes with existing challenges and prospects of AlN, including vacancy-engineered contacts, scalable single-crystal substrates, co-doping strategies, and emerging device architectures that could yield reliable bipolar conductivity and practical AlN-based power electronics. By discussing critical components in theory, fundamental growth science, and device-level demonstrations of AlN, this review aims to serve as a comprehensive guide for researchers and engineers seeking to position AlN as a foundational material for next-generation power and optoelectronic systems.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"14 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149090058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Light-controlled van der Waals tunnel junctions: Mechanisms, architectures, functionalities, and opportunities","authors":"Mohamed Shehabeldin,Xuguo Zhou,Ran Li,Pablo Jarillo-Herrero,Yuxuan Cosmi Lin,Jian Tang,Qiong Ma","doi":"10.1063/5.0337456","DOIUrl":"https://doi.org/10.1063/5.0337456","url":null,"abstract":"The phenomenon of electron tunneling has long been central to quantum transport and continues to provide a powerful framework for understanding and controlling electronic processes in solids. When combined with optical excitation, tunneling becomes a particularly rich platform for experiments, because light can drive nonequilibrium carrier populations and open transport pathways that are inaccessible without optical excitation. The emergence of van der Waals (vdW) materials has greatly expanded this opportunity by enabling atomically thin heterostructures with clean interfaces, engineered barriers, and highly tunable band alignment. In this review, we discuss the fundamental mechanisms of photo-assisted transport and the realization of vdW tunnel junctions and show how they provide electrical access to nonequilibrium dynamics and collective excitations in quantum materials. We further examine emerging functionalities including photodetection, tunneling-driven light emission, sensing, and memory. Finally, we present a forward-looking perspective on new opportunities such as quantum-geometric probes, twist-resolved spectroscopy, moiré ferroelectricity, and scalable architectures for computing and sensing.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"37 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149090005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unraveling the defect physics of SiC micropipe sidewalls by non-line-of-sight confocal spectromicroscopy: Amphoteric giant traps","authors":"Irwan Saleh Kurniawan,Russel Cruz Sevilla,Ruth Jeane Soebroto,Hsiu-Ying Huang,Ji-Lin Shen,Sheng Hsiung Chang,Wen-Chung Li,Chi-Tsu Yuan","doi":"10.1063/5.0350159","DOIUrl":"https://doi.org/10.1063/5.0350159","url":null,"abstract":"Despite substantial advances in SiC crystal growth, micropipes can still occur in thick and large-diameter SiC wafers, remaining among the most detrimental extended defects associated with device failure. However, the microscopic nature of the defects residing on their internal sidewalls and their contribution to the leakage current remain poorly understood because the high-aspect-ratio hollow geometry severely restricts direct, nondestructive optical access. Here, we develop a non-line-of-sight confocal multiple-reflection spectromicroscopy combined with direct defect photoionization to unravel the underlying defect physics of micropipe sidewalls. We show that the internal sidewalls host a high density of spatially and energetically distributed donor-like and acceptor-like deep-level states, thus giving rise to ultrabroad defect emissions comprising inherent donor–acceptor-pair-like (DAP-like) recombination and detrapping-mediated free-to-bound transitions. The dominant DAP-like emissions can be attributed to rapid carrier capture by the sidewall defects, as evidenced by a fast rise, nanosecond-scale decay, and coupled carrier kinetics. These results suggest that micropipe sidewalls can serve as extended amphoteric giant traps and carrier reservoirs, providing preferential leakage pathways through trap-assisted carrier transport along the internal sidewalls. Our work establishes a nondestructive optical technique for directly probing high-aspect-ratio extended defects and provides mechanistic insight into their defect physics and associated leakage mechanisms.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"15 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149090006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Erratum: “Phonon interactions in metal halide perovskites elucidated by Raman scattering” [Appl. Phys. Rev.\u0000 13\u0000 , 031321 (2026)]","authors":"Alejandro R. Goñi","doi":"10.1063/5.0357725","DOIUrl":"https://doi.org/10.1063/5.0357725","url":null,"abstract":"","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"14 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"2D metal-organic framework: Altermagnetic high-order topological insulator and tunable spin-polarized corner states","authors":"Yefeng Li,Lei Jin,Meijun Wang,Ying Liu,Xuefang Dai,Guodong Liu,Xiaoming Zhang","doi":"10.1063/5.0326481","DOIUrl":"https://doi.org/10.1063/5.0326481","url":null,"abstract":"Altermagnetic high-order topological insulators (HOTIs) represent an emerging class of magnetic topological phases. However, their realization in metal-organic framework (MOF) materials remains rare. Here, we show that monolayer MOF Cr(diz)2 (diz = 1,3-diazete) hosts such a state. The material exhibits the altermagnetic ground state, with the magnetic moments mainly from Cr and C atoms. In this magnetic ground state, both the bulk and edge states are gapped, and spin-up and spin-down corner states reside degenerately within this gap. On the square nanodisk, these corner states exhibit opposite spin directions at adjacent corners. In addition, these corner states can also be tuned by multiple approaches. Specifically, the biaxial strain can tune the corner states toward or away from the Fermi level. The electric field can induce energy splitting between the spin-up and spin-down corner states, and the energy difference is proportional to the electric field strength. When stacked into a bilayer, the system transitions from a d-wave to a g-wave altermagnet, with the corner states displaying opposite spin directions both between adjacent layers and between neighboring corners within each layer. Our work not only extends the altermagnetic HOTI state to MOF materials but also provides a platform for manipulating spin-polarized corner states toward spintronic applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"20 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149090002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enabling coherence of polarized spin and photon in chiral nanoclusters through chirality-mediated magnetization control","authors":"Ming-Sheng Gao,Bao-Liang Han,Pan-Pan Sun,Zhi-Wei Xiang,Xiang-Qian Lu,Zhi Wang,Wei Qin,Chen-Ho Tung,Di Sun","doi":"10.1063/5.0344794","DOIUrl":"https://doi.org/10.1063/5.0344794","url":null,"abstract":"Metal nanoclusters have emerged as pivotal materials in catalysis, sensing, luminescence, and bioimaging, largely due to the unique synergy between their polymetallic cores, ligand shells, and the resulting interfacial regions. This study investigates the mechanisms of angular momentum transfer from metal centers to organic ligands within enantiomeric nanocluster magnets, specifically focusing on its dependence on spin–photon–chiral orbit interactions. The strong interaction between the Cu4 core and the surrounding chiral organic ligands in the R/S-Cu4 (R/S refers to the chirality of the chiral ligand) nanocluster induces electron–phonon coupling dependent spin polarization that exhibits a marked disparity between enantiomers. Intensified electron–phonon coupling tends to quench the influence of the chiral orbit on spin states. Conversely, reducing the temperature leads to the attenuation of these vibrational interactions, thereby promoting more efficient spin–photon coupling. These findings offer fundamental insights into the complex interplay between spin degrees of freedom, lattice dynamics, and polarized photons in chiral nanoclusters.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"7 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149090003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silk biomaterials in the era of digital manufacturing: Physics, processing, and biomedical translation","authors":"Deepali Kadam,Mehmet Onur Aydogdu,Mohan Edirisinghe,Balasubramanian Kandasubramanian","doi":"10.1063/5.0333695","DOIUrl":"https://doi.org/10.1063/5.0333695","url":null,"abstract":"Additive manufacturing has gained prominence as a powerful platform for fabricating morphologically complex and functionally active biomaterial constructs for biomedical applications. Among biopolymers, silk has been extensively explored owing to its good mechanical properties (tensile strength 300–740 MPa, Young's modulus 5–17 GPa, toughness ∼70 MJ/m3), degradation behavior, rich functional bioactive groups, and aqueous processability. However, translating silk into printable bioinks is limited by its inherent structural hierarchy and sensitivity to processing conditions. This review provides a critical overview of the properties and processing of silk in light of Digital manufacturing, with emphasis on structure, properties, functionalization, and printability. Moreover, the effects of different degumming methods and functionalization protocols on the rheological properties of silk solutions are analyzed. The resulting implications for printing fidelity are also examined, demonstrating that processing-derived molecular and conformational changes critically determine flow behavior, shape retention, and structural resolution in 3D-printed constructs. State-of-the-art developments in extrusion-based, inkjet, and light-assisted printing techniques for silk-based systems are systematically evaluated, including cross-linking mechanisms, composite formulations, and post-printing analyses, depending on the desired application focus. Moreover, the influence of printing parameters on filament formation, hierarchical organization, and mechanical and functional performance is thoroughly discussed. Crucially, biomedical applications of 3D printed silk constructs spanning from tissue engineering scaffolds, and drug delivery systems to biosensors are reviewed, emphasizing design-function correlation. Thus, this review positions silk as a versatile material for next-generation digital manufacturing and biofabrication.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"35 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149090007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly selective and sensitive lung cancer molecule detection by two-dimensional C2N monolayer","authors":"Deobrat Singh,Raquel Lizárraga","doi":"10.1063/5.0324711","DOIUrl":"https://doi.org/10.1063/5.0324711","url":null,"abstract":"Rapid and reliable detection of hazardous chemicals is critical for environmental monitoring, industrial safety, and human health. Two-dimensional (2D) porous materials have emerged as promising platforms for chemical sensing due to their high surface activity, tunable electronic structure, and excellent environmental stability. In the present study, we systematically investigate the adsorption mechanism of several volatile organic compounds (VOCs), including C4H8Cl2S, C2H4Cl2O, C2H6O, C6H7N, and C7H9N, on a C2N monolayer using first-principles calculations. Adsorption energies, charge transfer (ranging from ∼0.16 |e| to 0.19 |e|), and work function variations (0.20–0.65 eV) were evaluated to quantify molecule-dependent interactions and electronic perturbations. The results show pronounced charge redistribution along with slight bandgap modifications caused by molecular states near the Fermi level, indicating that the adsorption process is physisorptive in nature. The sensitivity response values are found to be 11.57, 8.71, 7.70, 5.39, and 3.44 for C4H8Cl2S, C2H4Cl2O, C2H6O, C6H7N, and C7H9N VOCs on C2N surface, respectively. Transport analysis using the non-equilibrium Green function formalism shows distinct suppression or enhancement of zero-bias transmission channels and characteristic I–V responses for each VOC, effectively creating ON and OFF current signatures for molecular recognition. Estimated recovery times from sub-microseconds to a few microseconds suggest rapid desorption and sensor reusability at room temperature. Overall, these results demonstrate that the C2N monolayer is a promising candidate for highly sensitive and selective VOC detection. Its performance suggests broad applicability in environmental and industrial safety monitoring and in early warning systems for exposure to cancer-related chemicals, as many VOCs are known to be associated with cancer and other severe health risks.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"53 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149090009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal transport mechanisms in electrolytes for all-solid-state batteries","authors":"Yitian Wang,Handing Wang,Xi Chen","doi":"10.1063/5.0318328","DOIUrl":"https://doi.org/10.1063/5.0318328","url":null,"abstract":"Solid electrolytes are central to next-generation solid-state batteries due to their improved safety and compatibility with high-energy electrodes. Beyond these advantages, their thermal transport behavior critically governs heat dissipation, with direct implications for battery efficiency, durability, and operational reliability. Here, we examine the thermal transport properties of inorganic solid electrolytes, drawing from both experimental measurements and theoretical analyses. We first summarize reported thermal conductivities across major material classes, including oxides, sulfides, and halides, and highlight their characteristic glass-like behavior. We then analyze the underlying mechanisms governing intrinsically low thermal conductivity, including liquid-like phonon dynamics, complex phonon dispersions, strong lattice anharmonicity, and diffuson-mediated thermal transport. Extrinsic factors such as site disorder, porosity, aging-induced phase changes, and composite architectures are also reviewed for their roles in modifying thermal transport. In addition, the relationship between ionic transport and thermal transport in solid electrolytes is discussed. This review provides a systematic perspective on thermal transport in solid electrolytes and highlights its implications for thermal management strategies in solid-state batteries.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"54 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148894421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wearable plantar pressure-sensing systems and their fusion with kinematics for gait analysis","authors":"Jianfeng Li,Gongchun Jiang,Jianxiang Wang,Shirong Li,Qiang Yang,Li Zhang,Yuxin Peng","doi":"10.1063/5.0316466","DOIUrl":"https://doi.org/10.1063/5.0316466","url":null,"abstract":"Gait analysis requires the integrated interpretation of plantar loading, three-dimensional ground reaction force, and kinematic information. Although recent reviews have discussed plantar pressure technologies, diabetic-foot monitoring, testing protocols, artificial-intelligence-based pressure analysis, or intelligent-shoe gait estimation, a few have integrated plantar pressure measurement, bending-induced artifacts, multisensor kinetic–kinematic fusion, and clinical applications into a unified framework. This review summarizes technological routes from both academic research and commercial systems in plantar pressure measurement, including non-wearable reference systems, wearable normal-force measurement systems, and wearable three-dimensional force measurement systems. Particular attention is given to bending-induced motion artifacts caused by sole or insole deformation, together with mitigation strategies. Recognizing that plantar pressure information alone is insufficient for comprehensive gait interpretation, this review further organizes multisensor plantar measurement systems from the perspectives of sensor types, hardware placement strategies, and data-fusion methods. Finally, the clinical translation of plantar measurement data is discussed for disease-risk identification, rehabilitation monitoring, and personalized intervention.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"77 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148922992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}