Applied physics reviews最新文献

{"title":"Progress, challenges, and perspectives of magnetoelectric composites and devices based on relaxor-PT single crystals","authors":"Deepak Rajaram Patil, Zhaoqiang Chu, Shuxiang Dong, Kee Hoon Kim, Hyunseok Song, Dae-Yong Jeong, Jungho Ryu","doi":"10.1063/5.0220827","DOIUrl":"https://doi.org/10.1063/5.0220827","url":null,"abstract":"Magnetoelectric (ME) composites exhibit robust ME interfacial coupling because of the strong interaction between piezoelectricity and magnetostriction. The presence of two novel functionalities, i.e., direct and converse ME couplings, makes them ideal candidates for multifunctional devices such as energy harvesters, magnetic field sensors, ME random access memories, and ME antennas. In these ME composites, ME coupling is strongly dependent on the superior physical properties of the piezoelectric and magnetostrictive materials. Therefore, magnetostrictive materials with excellent piezomagnetic coefficients and piezoelectric materials with excellent piezoelectric coefficients are required to achieve a large ME coupling. Among the various piezoelectric materials, ferroelectric relaxor-PbTiO3 (PT) single crystals have been used extensively as piezoelectric constituents because of their ultrahigh piezoelectric and electromechanical properties. Furthermore, the domain structure and crystal orientation of the relaxor-PT single crystals exhibit extraordinarily large piezoelectric and electromechanical properties. Owing to these multifunctional properties, relaxor-PT single-crystal-based ME composites have been widely used for studying direct and converse ME couplings in ME composites in recent years. Relaxor-PT single-crystal-based ME composites show excellent ME coupling, e.g., the highest ME voltage coefficient, equivalent magnetic noise, and output power of 7000 V cm−1 Oe−1@ 23.23 kHz, 6 pT/√Hz @1 Hz, and 19 mW @ 60 Hz, respectively, which are one of the best-reported values in ME composites so far. Considering the vast research on relaxor-PT single-crystal-based ME composites, we present a detailed review of the recent progress, challenges, and perspectives of ME composites and ME devices based on relaxor-PT single crystals.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"24 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143050703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanoscale insights on phase transition dynamics of doped VO2 for memristor devices","authors":"Lin Wang, Li Chen, Xionghu Xu, Zhangchen Hou, Yafang Li, Liyan Shang, Jinzhong Zhang, Liangqing Zhu, Yawei Li, Fei Cao, Genshui Wang, Junhao Chu, Zhigao Hu","doi":"10.1063/5.0235030","DOIUrl":"https://doi.org/10.1063/5.0235030","url":null,"abstract":"This study utilized co-sputtering to fabricate Mo-doped VO2 films and identified an optimal concentration exhibiting a lower phase transition temperature (Th = 55.8 °C) and a broader hysteresis window (Δ T = 13.6 °C). At the atomistic scale, it is demonstrated that Mo dopant-induced localized strain accelerates the phase transition, which leads to the relaxation of the tetragonal structure. Furthermore, the effects of Mo doping on the phase transition process and electrical properties are characterized at the nanoscale using conductive atomic force microscopy and Kelvin probe force microscopy, and the potential application in selectors can be evaluated. The results indicated that Mo doping destabilizes the M1 phase by introducing a high density of electrons, thereby significantly reducing the electron–electron interactions as per the Mott model. Moreover, the device exhibited stable threshold and memristive properties at room temperature, quickly switching from high to low-resistance states at a threshold voltage of 2.37 V and maintaining stability over more than 1000 cycles with a selectivity >102. The present work not only highlights the role of Mo doping in enhancing the functional properties of VO2 but also demonstrates its feasibility in high-performance selectors devices.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"36 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143050704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Coherent magnon transport in a van der Waals antiferromagnet","authors":"Jilei Chen, Rundong Yuan, Kanglin Yu, Xiaoyu Wang, Lutong Sheng, Jinlong Wang, Chensong Hua, Weichao Yu, Jiang Xiao, Song Liu, Dapeng Yu, Jean-Philippe Ansermet, Zhe Wang, Haiming Yu","doi":"10.1063/5.0245775","DOIUrl":"https://doi.org/10.1063/5.0245775","url":null,"abstract":"Recently developed van der Waals magnets offer a promising platform for advancing spintronics. The weak interlayer antiferromagnetic exchange coupling in van der Waals antiferromagnets allows for unique spin dynamics and control over magnons. In this study, we present the excitation and detection of coherent magnon transport in the van der Waals antiferromagnet CrPS4. We observe pronounced coherent magnon–magnon coupling between the optical and acoustic magnon branches, resulting in hybridized magnon modes that can be tuned by modulating the coupling strength, enabling a tunability across a broad frequency range exceeding 10 GHz. The group velocity of the antiferromagnetic magnons is estimated to be approximately 3.8 km/s. Additionally, we experimentally determine the magnon dispersion in CrPS4 by varying the magnon wavevectors and propose an analytical model for the antiferromagnetic magnon dispersion in CrPS4. Our findings open new avenues for energy-efficient magnonic devices based on van der Waals antiferromagnets.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"30 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143050705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single-photon generation and manipulation in quantum nanophotonics","authors":"Guangxin Liu, Wenjie Zhou, Dmitrii Gromyko, Ding Huang, Zhaogang Dong, Renming Liu, Juanfeng Zhu, Jingfeng Liu, Cheng-Wei Qiu, Lin Wu","doi":"10.1063/5.0227350","DOIUrl":"https://doi.org/10.1063/5.0227350","url":null,"abstract":"Developing reliable and efficient single-photon sources is crucial for advancing quantum technologies, relying on nonlinear frequency conversion or spontaneous emission from individual quantum emitters. While different types of single-photon sources excel in specific applications, none meet all criteria for an “ideal” source: exceptional brightness, high purity, and indistinguishability. To address this challenge, coupling single-photon emitters with designer nanostructures can significantly enhance emission performance, a pivotal area in quantum nanophotonics. This review summarizes recent advancements over the past decade in generating and manipulating single photons, emphasizing the pivotal role of nanostructure coupling. Single-photon emission systems—such as nonlinear crystals, solid-state defects, quantum dots, carbon nanotubes, and two-dimensional materials—are categorized quantitatively based on their ability to achieve high purity, indistinguishability, and brightness, presented in a three-dimensional technology map. Furthermore, nanostructure engineering is showcased for manipulating properties such as emission direction, polarization, chirality, and entanglement of single photons. By elucidating these critical aspects, this review aims to advance understanding of how advancements in nanostructured environments promise to shape the future of single-photon generation and manipulation within quantum nanophotonics.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"25 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lanthanide doped semiconductor thin films for photonic and optoelectronic applications","authors":"Jiawen Wang, Lihui Huang, Shenghuang Lin, Shiqing Xu, Gongxun Bai","doi":"10.1063/5.0220910","DOIUrl":"https://doi.org/10.1063/5.0220910","url":null,"abstract":"High-performing semiconductor thin films are crucial components in today's electronic age, finding extensive applications in devices and chips. Recently, there has been a significant trend toward incorporating lanthanide elements into these films, primarily driven by the escalating demand for photonic and optoelectronic applications. The featured article presents a detailed overview of the latest research advancements in lanthanide-doped semiconductor thin films tailored for photonic and optoelectronic uses. This comprehensive review encompasses the principles, design considerations, fabrication methods, and characterization techniques involved in creating these doped films. The semiconductors discuss span a range of materials, including wide bandgap semiconductors, perovskites, two-dimensional materials, piezoelectric materials, and organic materials. The article further explores the photonic and optoelectronic applications of these doped films. Finally, it delves into the current challenges, potential solutions, future prospects, and research gaps that need to be addressed in this exciting field.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"30 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The physics of phase transition phenomena enhanced by nanoparticles","authors":"Liu Yang, Jialu Tian, Yulong Ding, Avinash Alagumalai, Fatih Selimefendigil, Mortaza Aghbashlo, Meisam Tabatabaei, L. Godson Asirvatham, Somchai Wongwises, S. A. Sherif, Efstathios E. Michaelides, Christos N. Markides, Omid Mahian","doi":"10.1063/5.0200714","DOIUrl":"https://doi.org/10.1063/5.0200714","url":null,"abstract":"Phase transitions are fundamental phenomena in physics that have been extensively studied owing to their applications across diverse industrial sectors, including energy, power, healthcare, and the environment. An example of such applications in the energy sector is thermal energy storage using phase change materials. In such systems, and indeed in many other thermal systems, an emerging and promising approach involves the use of nanoparticles, which have been extensively studied for their potential to enhance the performance of thermal systems. However, conducting thermodynamic analyses of thermal systems in the presence of nanoparticles proves to be complex and resource-consuming because of the involvement of many parameters, including (i) temperature, molecular structure, and composition of the host fluid in which nanoparticles are either dispersed or in physical contact; (ii) nanoparticle morphology, size, type, and concentration; and (iii) complex interactions between the nanoparticles and the base fluid. This article reviews recent studies on the role of nanoparticles in phase transition processes such as freezing, melting, boiling, evaporation, and condensation. It begins with an overview of phase transition phenomena without nanoparticles, emphasizing the most important controlling parameters, and then examines the underlying physics of nanoparticle-involved phase transitions, critically examining their impact on process speed (transport rates). The article also explores physical phenomena, such as Brownian motion, thermophoresis, microconvection, and nanoparticle agglomeration, and considers their contribution to rate control (enhancement or reduction). Finally, the article presents challenges, research gaps, and suggestions for future exploration, aimed at offering a comprehensive understanding of the complex interplay between the presence of nanoparticles and the phase transition processes.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"239 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Polaron hopping induced dual-band absorption in all amorphous cathodic electrochromic oxides","authors":"Renfu Zhang, Menghan Yin, Peipei Shao, Qingjiao Huang, Gunnar A. Niklasson, Rui-Tao Wen","doi":"10.1063/5.0244549","DOIUrl":"https://doi.org/10.1063/5.0244549","url":null,"abstract":"Electrochromic oxides have tremendous potential applications in smart windows, displays, and camouflage due to their capability for selective modulation of visible and near-infrared optical spectra. Although these applications are dependent on the optical performance, the origin of the optical absorption in electrochromic oxides is not clear. Here, we demonstrate that the electrochromism of all amorphous cathodic electrochromic oxides can be described by a combination of polaron and bipolaron hopping. Based on the valences of the metallic constituents, we model experimental optical absorption spectra by polaron theory and assign two prominent absorption peaks to polaronic and bipolaronic charge transfer excitations. However, in the special case of V2O5, three peaks were necessary to fit the optical spectra. The activation energies of polaronic and bipolaronic hopping were remarkably similar for all the cathodic oxides studied. Within the framework of polaron absorption, V2O5 would be categorized as a cathodic oxide, rather than as a mixed anodic/cathodic material as in the conventional picture. We emphasize that our findings here not only offer a profound understanding of all amorphous cathodic electrochromic oxides but also pave the way for exploring electrochromic oxides with dual-band modulations.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"32 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-stable multifunctional dynamically reconfigurable artificial synapses based on hybrid graphene/ferroelectric field-effect transistors","authors":"Liang Liu, Xutao Zhang, Ruijuan Tian, Qiao Zhang, Mingwen Zhang, Yu Zhang, Xuetao Gan","doi":"10.1063/5.0235614","DOIUrl":"https://doi.org/10.1063/5.0235614","url":null,"abstract":"In response to the challenges posed by traditional computing architectures in handling big data and AI demands, neuromorphic computing has emerged as a promising alternative inspired by the brain's efficiency. This study focuses on three-terminal synaptic transistors utilizing graphene and P(VDF-TrFE) to achieve dynamic reconfigurability between excitatory and inhibitory response modes, which are crucial for mimicking biological functions. The devices operate by applying different top gate spikes (±25 V and ±10 V) to modulate the polarization degree of P(VDF-TrFE), thereby regulating the carrier type and concentration in the graphene channel. This results in the effective realization of enhancement and inhibition processes in two neural-like states: excitatory and inhibitory modes, accompanied by good neural plasticity with paired-pulse facilitation and spike-time-dependent plasticity. With these features, the synaptic devices achieve brain-like memory enhancement and human-like perception functions, exhibiting excellent stability, durability over 1000 cycles, and a long retention period exceeding 10 years. Additionally, the performance of the artificial neural network is evaluated for handwritten digit recognition, achieving a high recognition accuracy of 92.28%. Our study showcases the development of highly stable, dynamically reconfigurable artificial synaptic transistors capable of emulating complex neural functions, providing a foundation for emerging neuromorphic computing systems and AI technologies.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"50 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143020777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Harnessing ferro-valleytricity in pentalayer rhombohedral graphene for memory and compute","authors":"Md Mazharul Islam, Shamiul Alam, Md Rahatul Islam Udoy, Md Shafayat Hossain, Kathleen E Hamilton, Ahmedullah Aziz","doi":"10.1063/5.0231749","DOIUrl":"https://doi.org/10.1063/5.0231749","url":null,"abstract":"Two-dimensional materials with multiple degrees of freedom, including spin, valleys, and orbitals, open up an exciting avenue for engineering multifunctional devices. Beyond spintronics, these degrees of freedom can lead to novel quantum effects such as valley-dependent Hall effects and orbital magnetism, which could revolutionize next-generation electronics. However, achieving independent control over valley polarization and orbital magnetism has been a challenge due to the need for large electric fields. A recent breakthrough involving pentalayer rhombohedral graphene has demonstrated the ability to individually manipulate anomalous Hall signals and orbital magnetic hysteresis, forming what is known as a valley-magnetic quartet. Here, we leverage the electrically tunable ferro-valleytricity of pentalayer rhombohedral graphene to develop nonvolatile memory and in-memory computation applications. We propose an architecture for a dense, scalable, and selector-less nonvolatile memory array that harnesses the electrically tunable ferro-valleytricity. In our designed array architecture, nondestructive read and write operations are conducted by sensing the valley state through two different pairs of terminals, allowing for independent optimization of read/write peripheral circuits. The power consumption of our PRG-based array is remarkably low, with only ∼6 nW required per write operation and ∼2.3 nW per read operation per cell. This consumption is orders of magnitude lower than that of the majority of state-of-the-art cryogenic memories. Additionally, we engineer in-memory computation by implementing majority logic operations within our proposed nonvolatile memory array without modifying the peripheral circuitry. Our framework presents a promising pathway toward achieving ultra-dense cryogenic memory and in-memory computation capabilities.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"48 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143020498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Small polarons mediated near-room-temperature metal–insulator transition in vanadium dioxide and their hopping dynamics","authors":"Xiongfang Liu, Tong Yang, Shanquan Chen, Jing Wu, Chi Sin Tang, Yuanjie Ning, Zuhuang Chen, Liang Dai, Mengxia Sun, Mingyao Chen, Kun Han, Difan Zhou, Shengwei Zeng, Shuo Sun, Sensen Li, Ming Yang, Mark B. H. Breese, Chuanbing Cai, Thirumalai Venkatesan, Andrew T. S. Wee, Xinmao Yin","doi":"10.1063/5.0236807","DOIUrl":"https://doi.org/10.1063/5.0236807","url":null,"abstract":"Researchers pursuing advanced photoelectric devices have discovered near room-temperature metal–insulator transitions (MIT) in nonvolatile VO2. Despite theoretical investigations suggesting that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic ellipsometry measurements and first-principles calculations. We illustrate the complementary role of polaron dynamics in facilitating Peierls and Mott transitions, thereby contributing to the MIT processes. Furthermore, our observations and characterizations of conventional metallic and correlated plasmons in the respective phases of the VO2 film offer valuable insight into their electron structures. This investigation enhances comprehension of the MIT mechanism in correlated systems and underscores the roles of polarons, lattice distortions, and electron correlations in facilitating phase transition processes in strongly correlated systems. Additionally, the detailed detection of small polarons and plasmons serves as inspiration for the development of new device functionalities.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"45 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}