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A general optical characterization method for determining the composition of Hg1−xCdxTe samples 测定Hg1−xCdxTe样品组成的一般光学表征方法
Infrared physics Pub Date : 1993-02-01 DOI: 10.1016/0020-0891(93)90037-8
Vishnu Gopal, R. Ashokan, A.K. Gupta
{"title":"A general optical characterization method for determining the composition of Hg1−xCdxTe samples","authors":"Vishnu Gopal,&nbsp;R. Ashokan,&nbsp;A.K. Gupta","doi":"10.1016/0020-0891(93)90037-8","DOIUrl":"10.1016/0020-0891(93)90037-8","url":null,"abstract":"<div><p>The rate of variation of transmission as a function of frequency or energy exhibits a maximum in the fundamental absorption region of the alloy semiconductor Hg<sub>1−<em>x</em></sub>Cd<sub><em>x</em></sub>Te. The maximum steepness occurs in the tail region of the absorption edge and its frequency can be correlated analytically with the composition. From the experimental measurements of room temperature IR transmission on both bulk grown and epilayers of Hg<sub>1−<em>x</em></sub>Cd<sub><em>x</em></sub>Te, it is shown that an analysis of the transmission curve at (d<em>T</em><sub>r</sub>/d<em>E</em>)<sub>max</sub> leads to the determination of composition and compositional uniformity in the given sample.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 1","pages":"Pages 83-87"},"PeriodicalIF":0.0,"publicationDate":"1993-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90037-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"53081693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Studies on the opto-electronic properties of III–V and II–VI group semiconductors from optical electronegativities 从光电负性研究III-V族和II-VI族半导体的光电性质
Infrared physics Pub Date : 1993-02-01 DOI: 10.1016/0020-0891(93)90040-E
R.R. Reddy, M.Ravi Kumar, T.V.R. Rao
{"title":"Studies on the opto-electronic properties of III–V and II–VI group semiconductors from optical electronegativities","authors":"R.R. Reddy,&nbsp;M.Ravi Kumar,&nbsp;T.V.R. Rao","doi":"10.1016/0020-0891(93)90040-E","DOIUrl":"10.1016/0020-0891(93)90040-E","url":null,"abstract":"<div><p>New empirical relations have been proposed to evaluate bond energies (<em>E</em><sub>s</sub>) in compound semiconductors, first from the knowledge of optical electronegativities of the constituent ions and secondly from the energy gap values. The validity of the two relations has been tested in the case of certain III–V and II–VI group semiconductors by comparing the calculated values of <em>E</em><sub>s</sub>, with those in the literature. From the computed values of <em>E</em><sub>s</sub>, refractive indices have been calculated. The Penn gap (<em>E</em><sub>p</sub>), Fermi energy (<em>E</em><sub>F</sub>) and <em>S</em><sub>o</sub>-parameter for these semiconductors have also been determined. The estimated values of these parameters are utilized to evaluate the electronic polarizabilities (α). The computed values of a compare excellently with the standard data.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 1","pages":"Pages 99-102"},"PeriodicalIF":0.0,"publicationDate":"1993-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90040-E","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"53081727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Systematic errors in dispersive fourier transform spectroscopy in a non-vacuum environment 非真空环境下色散傅立叶变换光谱的系统误差
Infrared physics Pub Date : 1993-02-01 DOI: 10.1016/0020-0891(93)90038-9
J.R. Birch
{"title":"Systematic errors in dispersive fourier transform spectroscopy in a non-vacuum environment","authors":"J.R. Birch","doi":"10.1016/0020-0891(93)90038-9","DOIUrl":"10.1016/0020-0891(93)90038-9","url":null,"abstract":"<div><p>A simple theory has been developed for the consequences of making dispersive Fourier transform spectroscopic measurements in a non-vacuum environment. Systematic errors are introduced which can be removed if the refractive index of that local atmosphere is known. The results of DFTS measurements on helium gas from 5.5 to 295 K are presented and used to correct previous measurements on the polymers TPX, low and high density polyethylene, and polystyrene in order to demonstrate the method.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 1","pages":"Pages 89-93"},"PeriodicalIF":0.0,"publicationDate":"1993-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90038-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"53081707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Infrared irradiance measurement of sources 红外光源辐照度测量
Infrared physics Pub Date : 1993-02-01 DOI: 10.1016/0020-0891(93)90029-7
S.P. Varma
{"title":"Infrared irradiance measurement of sources","authors":"S.P. Varma","doi":"10.1016/0020-0891(93)90029-7","DOIUrl":"10.1016/0020-0891(93)90029-7","url":null,"abstract":"<div><p>Experimentally determined irradiance values of various sources in the spectral region 0.8–13 μm have been reported. The accuracy of the spectroradiometer for irradiance measurement has been deduced and the probable uncertainties in its measurement have been estimated.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 1","pages":"Pages 33-35"},"PeriodicalIF":0.0,"publicationDate":"1993-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90029-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"53081588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Excess currents in narrow gap CdxHg1−xTe p-n junctions 窄隙CdxHg1−xTe p-n结的超电流
Infrared physics Pub Date : 1993-02-01 DOI: 10.1016/0020-0891(93)90030-B
N.L. Bazhenov, S.I. Gasanov, V.I. Ivanov-Omskii
{"title":"Excess currents in narrow gap CdxHg1−xTe p-n junctions","authors":"N.L. Bazhenov,&nbsp;S.I. Gasanov,&nbsp;V.I. Ivanov-Omskii","doi":"10.1016/0020-0891(93)90030-B","DOIUrl":"10.1016/0020-0891(93)90030-B","url":null,"abstract":"<div><p>Reverse bias dark currents in p-n junctions fabricated in undoped Cd<sub><em>x</em></sub>Hg<sub>1−<em>x</em></sub>Te (CMT) (0.22 &lt; <em>x</em> &lt; 0.24) LPE epilayers by ion implantation of boron have been studied at different temperatures. The behaviour of current-voltage (<em>I–V</em>) characteristics at temperatures below 80 K allows us to discriminate two types of material. The first group consists of samples with currents dominated by a band-to-band tunnelling mechanism. The second is characterized by the current which exceeds that in the first group. The excess currents proved to be connected with fluctuations of charged impurity density which changed local tunnel transparency of the potential barriers. This mechanism is likely to dominate current in closely compensated samples. A quantitative analysis of <em>I–V</em> characteristics is made.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 1","pages":"Pages 37-41"},"PeriodicalIF":0.0,"publicationDate":"1993-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90030-B","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"53081607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
FIR absorption studies of neodymium sulphate by FTIR at low temperatures 低温下FTIR对硫酸钕的FIR吸收研究
Infrared physics Pub Date : 1993-02-01 DOI: 10.1016/0020-0891(93)90032-3
Manju Arora, Man Mohan Pradhan
{"title":"FIR absorption studies of neodymium sulphate by FTIR at low temperatures","authors":"Manju Arora,&nbsp;Man Mohan Pradhan","doi":"10.1016/0020-0891(93)90032-3","DOIUrl":"10.1016/0020-0891(93)90032-3","url":null,"abstract":"<div><p>Far infrared (FIR) spectra of neodymium sulphate octahydrate and its deuterated analogue crystals were studied in the 400-50 cm<sup>−1</sup> region. Measurements were carried out at ambient and low temperatures. A quasi structure model was used to identify the absorption bands and for the assignment of the spectral information. Bands pertaining to librational modes hindered rotations, and translation modes arising from different molecular groups, ions and bondings were obtained. Low temperature measurements were quite useful for revealing the removal of degeneracy, sharpening of the bands, shifting of the frequency and in the identification of weak bands. Deuteration of the crystals was used to identify the bands pertaining to water molecules present in the lattice and in the coordinated water. The isotopic shift arising from the corresponding bands of H<sub>2</sub>O and D<sub>2</sub>O was found to be 1.053 at a temperature of 290 K and 1.043 at 60 K.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 1","pages":"Pages 49-53"},"PeriodicalIF":0.0,"publicationDate":"1993-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90032-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"53081627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Infrared plasma reflectivity minimum in heavily doped n-Si 红外等离子体反射率在重掺杂n-Si中最小
Infrared physics Pub Date : 1993-02-01 DOI: 10.1016/0020-0891(93)90036-7
M.M. Jevtić , M.B. Živanov
{"title":"Infrared plasma reflectivity minimum in heavily doped n-Si","authors":"M.M. Jevtić ,&nbsp;M.B. Živanov","doi":"10.1016/0020-0891(93)90036-7","DOIUrl":"10.1016/0020-0891(93)90036-7","url":null,"abstract":"<div><p>This paper presents a numerical analysis of infrared (IR) plasma reflectivity minimum in ultra heavily doped (UHD) n-Si (impurity concentration <em>N</em> up to 6 × 10<sup>21</sup>cm<sup>−3</sup>) by using a self-consistent method (SCM) and a complex physical model. The necessity of taking into account the dependence of effective mass on impurity concentration is shown. The scattering on defects (<em>N</em><sub>def</sub> = 5 × 10<sup>17</sup> cm<sup>−3</sup>) and dislocation (<em>N</em><sub>dis</sub> = 5 × 10<sup>11</sup> cm<sup>−2</sup>) is included. The approximate relation for the wavelength λ<sub>m</sub>(<em>N</em>) of the reflectivity minimum is given. The results obtained are compared with the experimental results for n-Si and satisfactory agreement is found.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 1","pages":"Pages 75-81"},"PeriodicalIF":0.0,"publicationDate":"1993-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90036-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"53081684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Near-contact diffusion and compensation in extrinsic photoconductors 外源光导体中的近接触扩散与补偿
Infrared physics Pub Date : 1993-02-01 DOI: 10.1016/0020-0891(93)90034-5
C.S. Olsen , N.M. Haegel , A.M. White , J.E. Huffman , F.F. Kinoshita , J.W. Beeman
{"title":"Near-contact diffusion and compensation in extrinsic photoconductors","authors":"C.S. Olsen ,&nbsp;N.M. Haegel ,&nbsp;A.M. White ,&nbsp;J.E. Huffman ,&nbsp;F.F. Kinoshita ,&nbsp;J.W. Beeman","doi":"10.1016/0020-0891(93)90034-5","DOIUrl":"10.1016/0020-0891(93)90034-5","url":null,"abstract":"<div><p>Carrier diffusion from heavily doped contact regions has been experimentally monitored with resistivity measurements of variable thickness Si: P extrinsic photoconductors (n<sup>+</sup>−n−n<sup>+</sup>). Modeling of free carrier diffusion at the interface of heavily doped contacts and highly resistive bulk at low temperatures predicts extended regions (5–30 μm) of excess carriers in high purity materials so that, in thin device structures, free carrier diffusion profiles from each contact will overlap and determine the resistivity of the device. In this work, a decrease in resistivity of four orders of magnitude was observed in a 5 μm thick structure compared to a 10 μm thick device. The resistivity of an ohmic structure in the thin limit is strongly dependent on the bulk and near-contact compensation, and resistivity measurements can be used as a sensitive measure of compensation at interfaces or in the tail of implanted layers.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 1","pages":"Pages 61-66"},"PeriodicalIF":0.0,"publicationDate":"1993-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90034-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"53081651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Far-infrared reflectivity spectra of cesium dihydrogen arsenate, in para- and ferroelectric phases 对电相和铁电相砷酸二氢铯的远红外反射光谱
Infrared physics Pub Date : 1993-02-01 DOI: 10.1016/0020-0891(93)90035-6
B. Wyncke , F. Brehat , D. Guerard
{"title":"Far-infrared reflectivity spectra of cesium dihydrogen arsenate, in para- and ferroelectric phases","authors":"B. Wyncke ,&nbsp;F. Brehat ,&nbsp;D. Guerard","doi":"10.1016/0020-0891(93)90035-6","DOIUrl":"10.1016/0020-0891(93)90035-6","url":null,"abstract":"<div><p>The temperature dependence of the infrared (IR) reflectivity spectra of CsH<sub>2</sub>AsO<sub>4</sub> is studied for the first time, for both polarizations parallel and perpendicular to the ferroelectric <em>c</em>-axis, in the para-and ferroelectric phase, in the frequency range 10–600 cm<sup>−1</sup>. The results obtained are compared and discussed in relation to the well known IR reflectivity spectroscopic studies of KH<sub>2</sub>PO<sub>4</sub>.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 1","pages":"Pages 67-73"},"PeriodicalIF":0.0,"publicationDate":"1993-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90035-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"53081671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The signal to noise ratio of gaseous photoacoustic systems 气体光声系统的信噪比
Infrared physics Pub Date : 1992-11-01 DOI: 10.1016/0020-0891(92)90071-Z
D. Pereira, A. Scalabrin
{"title":"The signal to noise ratio of gaseous photoacoustic systems","authors":"D. Pereira,&nbsp;A. Scalabrin","doi":"10.1016/0020-0891(92)90071-Z","DOIUrl":"10.1016/0020-0891(92)90071-Z","url":null,"abstract":"<div><p>Measurement of small absorption coefficients of weakly absorbing or trace gases in the atmosphere has been one of the most important applications of laser photoacoustic devices. Normally, the major factor limiting the sensitivity of these systems is the spurious signal produced by the heating of the cell windows, due to the partial absorption of the laser pump radiation. We present a simple photoacoustic configuration that eliminates the spurious window and external background signals and enhances the main (real) signal of IR gaseous photoacoustic systems, optimizing the signal-to-noise ratio.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"33 6","pages":"Pages 549-555"},"PeriodicalIF":0.0,"publicationDate":"1992-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(92)90071-Z","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"53081132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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