外源光导体中的近接触扩散与补偿

C.S. Olsen , N.M. Haegel , A.M. White , J.E. Huffman , F.F. Kinoshita , J.W. Beeman
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引用次数: 2

摘要

利用变厚度Si: P外源光导体(n+−n−n+)的电阻率测量,对重掺杂接触区载流子扩散进行了实验监测。对低温下重掺杂触点和高阻体界面上的自由载流子扩散进行建模,预测了高纯度材料中多余载流子的扩展区域(5-30 μm),因此,在薄器件结构中,每个触点的自由载流子扩散曲线将重叠并确定器件的电阻率。在这项工作中,与10 μm厚的器件相比,在5 μm厚的结构中观察到电阻率降低了4个数量级。欧姆结构在薄限内的电阻率很大程度上取决于体积和近接触补偿,电阻率测量可以作为界面或植入层尾部补偿的敏感测量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Near-contact diffusion and compensation in extrinsic photoconductors

Carrier diffusion from heavily doped contact regions has been experimentally monitored with resistivity measurements of variable thickness Si: P extrinsic photoconductors (n+−n−n+). Modeling of free carrier diffusion at the interface of heavily doped contacts and highly resistive bulk at low temperatures predicts extended regions (5–30 μm) of excess carriers in high purity materials so that, in thin device structures, free carrier diffusion profiles from each contact will overlap and determine the resistivity of the device. In this work, a decrease in resistivity of four orders of magnitude was observed in a 5 μm thick structure compared to a 10 μm thick device. The resistivity of an ohmic structure in the thin limit is strongly dependent on the bulk and near-contact compensation, and resistivity measurements can be used as a sensitive measure of compensation at interfaces or in the tail of implanted layers.

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