红外等离子体反射率在重掺杂n-Si中最小

Infrared physics Pub Date : 1993-02-01 DOI:10.1016/0020-0891(93)90036-7

M.M. Jevtić , M.B. Živanov

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引用次数: 0

摘要

本文采用自洽法和复杂物理模型，对超重掺杂(UHD) N - si(杂质浓度N达6 × 1021cm−3)中红外(IR)等离子体反射率最小值进行了数值分析。指出了考虑杂质浓度对有效质量的影响的必要性。包括缺陷(Ndef = 5 × 1017 cm−3)和位错(Ndis = 5 × 1011 cm−2)上的散射。给出了反射率最小值波长λm(N)的近似关系式。将所得结果与n-Si的实验结果进行了比较，得到了满意的结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Infrared plasma reflectivity minimum in heavily doped n-Si

This paper presents a numerical analysis of infrared (IR) plasma reflectivity minimum in ultra heavily doped (UHD) n-Si (impurity concentration N up to 6 × 10²¹cm⁻³) by using a self-consistent method (SCM) and a complex physical model. The necessity of taking into account the dependence of effective mass on impurity concentration is shown. The scattering on defects (N_def = 5 × 10¹⁷ cm⁻³) and dislocation (N_dis = 5 × 10¹¹ cm⁻²) is included. The approximate relation for the wavelength λ_m(N) of the reflectivity minimum is given. The results obtained are compared with the experimental results for n-Si and satisfactory agreement is found.

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Infrared physics

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