测定Hg1−xCdxTe样品组成的一般光学表征方法

Vishnu Gopal, R. Ashokan, A.K. Gupta
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引用次数: 0

摘要

作为频率或能量函数的透射变化率在合金半导体Hg1−xCdxTe的基吸收区表现出最大。最大陡度出现在吸收边的尾部区域,其频率可以与成分解析相关。从Hg1−xCdxTe的体生长层和脱膜层的室温红外透射率的实验测量中可以看出,分析(dTr/dE)最大值处的透射曲线可以确定给定样品的成分和均匀性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A general optical characterization method for determining the composition of Hg1−xCdxTe samples

The rate of variation of transmission as a function of frequency or energy exhibits a maximum in the fundamental absorption region of the alloy semiconductor Hg1−xCdxTe. The maximum steepness occurs in the tail region of the absorption edge and its frequency can be correlated analytically with the composition. From the experimental measurements of room temperature IR transmission on both bulk grown and epilayers of Hg1−xCdxTe, it is shown that an analysis of the transmission curve at (dTr/dE)max leads to the determination of composition and compositional uniformity in the given sample.

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