{"title":"窄隙CdxHg1−xTe p-n结的超电流","authors":"N.L. Bazhenov, S.I. Gasanov, V.I. Ivanov-Omskii","doi":"10.1016/0020-0891(93)90030-B","DOIUrl":null,"url":null,"abstract":"<div><p>Reverse bias dark currents in p-n junctions fabricated in undoped Cd<sub><em>x</em></sub>Hg<sub>1−<em>x</em></sub>Te (CMT) (0.22 < <em>x</em> < 0.24) LPE epilayers by ion implantation of boron have been studied at different temperatures. The behaviour of current-voltage (<em>I–V</em>) characteristics at temperatures below 80 K allows us to discriminate two types of material. The first group consists of samples with currents dominated by a band-to-band tunnelling mechanism. The second is characterized by the current which exceeds that in the first group. The excess currents proved to be connected with fluctuations of charged impurity density which changed local tunnel transparency of the potential barriers. This mechanism is likely to dominate current in closely compensated samples. A quantitative analysis of <em>I–V</em> characteristics is made.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 1","pages":"Pages 37-41"},"PeriodicalIF":0.0000,"publicationDate":"1993-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90030-B","citationCount":"1","resultStr":"{\"title\":\"Excess currents in narrow gap CdxHg1−xTe p-n junctions\",\"authors\":\"N.L. Bazhenov, S.I. Gasanov, V.I. Ivanov-Omskii\",\"doi\":\"10.1016/0020-0891(93)90030-B\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Reverse bias dark currents in p-n junctions fabricated in undoped Cd<sub><em>x</em></sub>Hg<sub>1−<em>x</em></sub>Te (CMT) (0.22 < <em>x</em> < 0.24) LPE epilayers by ion implantation of boron have been studied at different temperatures. The behaviour of current-voltage (<em>I–V</em>) characteristics at temperatures below 80 K allows us to discriminate two types of material. The first group consists of samples with currents dominated by a band-to-band tunnelling mechanism. The second is characterized by the current which exceeds that in the first group. The excess currents proved to be connected with fluctuations of charged impurity density which changed local tunnel transparency of the potential barriers. This mechanism is likely to dominate current in closely compensated samples. A quantitative analysis of <em>I–V</em> characteristics is made.</p></div>\",\"PeriodicalId\":81524,\"journal\":{\"name\":\"Infrared physics\",\"volume\":\"34 1\",\"pages\":\"Pages 37-41\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0020-0891(93)90030-B\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/002008919390030B\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared physics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/002008919390030B","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Excess currents in narrow gap CdxHg1−xTe p-n junctions
Reverse bias dark currents in p-n junctions fabricated in undoped CdxHg1−xTe (CMT) (0.22 < x < 0.24) LPE epilayers by ion implantation of boron have been studied at different temperatures. The behaviour of current-voltage (I–V) characteristics at temperatures below 80 K allows us to discriminate two types of material. The first group consists of samples with currents dominated by a band-to-band tunnelling mechanism. The second is characterized by the current which exceeds that in the first group. The excess currents proved to be connected with fluctuations of charged impurity density which changed local tunnel transparency of the potential barriers. This mechanism is likely to dominate current in closely compensated samples. A quantitative analysis of I–V characteristics is made.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
